公开(公告)号：US08461041B2

公开(公告)日：2013-06-11

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在所述绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并且在所述开口中形成所述阻挡层中的铜的互连结构。

公开(公告)号：US20130048358A1

公开(公告)日：2013-02-28

申请号：US13530815

申请日：2012-06-22

申请人： Tsuyoshi KANKI ,  Shoichi Suda ,  Yoshihiro Nakata

发明人： Tsuyoshi KANKI ,  Shoichi Suda ,  Yoshihiro Nakata

IPC分类号： H05K1/00 ,  H05K3/00 ,  H05K1/02

CPC分类号： H01L23/5389 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/12105 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T428/12993 ,  Y10T428/24355 ,  Y10T428/24463 ,  Y10T428/31515 ,  H01L2924/00

摘要： A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

摘要翻译： 布线结构包括：形成在基板上的绝缘膜; 形成在所述绝缘膜上的多个布线; 以及在所述多个布线之间的区域中形成在所述绝缘膜上的感应层，所述布线的构成原子在所述诱导层中扩散。

公开(公告)号：US08382352B2

公开(公告)日：2013-02-26

申请号：US13006646

申请日：2011-01-14

申请人： Yasushi Yatsuda ,  Yoshihiro Nakata ,  Eiji Kawamoto

发明人： Yasushi Yatsuda ,  Yoshihiro Nakata ,  Eiji Kawamoto

IPC分类号： B60Q1/04 ,  F21V5/00

CPC分类号： B29C45/0025 ,  B29C2045/0027 ,  B29L2011/0016 ,  B29L2031/747 ,  F21S41/147 ,  F21S41/155 ,  F21S41/25 ,  F21S41/255 ,  F21S41/295 ,  F21S41/321 ,  F21S41/36 ,  F21S41/365 ,  F21S41/43

摘要： Disclosed is a projector-type headlight that can include a light emitting device, a reflector having a reflection surface to reflect a light from the light emitting device forward, a projector lens to project the reflected light from the reflection surface forward, the projector lens being a resin molding, and a shade to form a light distribution pattern having a light-dark border line by blocking a part of the reflected light heading from the reflection surface to the projector lens. A gate trace can be formed in a circumference portion of the projector lens. The gate trace can be provided lower than a horizontal surface on which a light axis of the projector lens passes through, and at the same time can be provided in a state of being shifted either leftward or rightward from a vertical surface on which the light axis of the projector lens passes through.

摘要翻译： 公开了一种投影仪型头灯，其可以包括发光装置，具有反射表面以反射来自发光装置的光的反射器，投影仪透镜，用于将来自反射表面的反射光向前突出，投影仪透镜为 树脂模制品和阴影，以通过阻挡从反射表面向投影透镜的反射光的一部分而形成具有浅黑色边界线的配光图案。 可以在投影透镜的圆周部分形成栅极迹线。 栅极迹线可以设置成比投影透镜的光轴穿过的水平面低，同时可以设置在从垂直表面向左或向右偏移的状态，在该垂直表面上，光轴 的投影机镜头通过。

公开(公告)号：US20110193425A1

公开(公告)日：2011-08-11

申请号：US13125087

申请日：2009-10-28

申请人： Ryota Hiura ,  Takakatsu Nozawa ,  Katsuhiro Hirata ,  Hiroshi Ishiguro ,  Yoshihiro Nakata

发明人： Ryota Hiura ,  Takakatsu Nozawa ,  Katsuhiro Hirata ,  Hiroshi Ishiguro ,  Yoshihiro Nakata

IPC分类号： H02K41/02

CPC分类号： H02K41/031 ,  H02K1/27 ,  H02K1/2713 ,  H02K1/2726 ,  H02K2207/03

摘要： A linear actuator includes a coil portion and a shaft portion. The coil portion includes a plurality of coils respectively applied with AC currents having different phases from one another. The shaft portion passes through an inside of the plurality of coils. The shaft portion includes: a plurality of permanent magnets and a plurality of intermediate members. The plurality of permanent magnets is arranged along a central axis C such that opposite magnetization directions face to each other in a direction of the central axis C. Each of the plurality of intermediate members is arranged between adjacent two of the plurality of permanent magnets. A saturation magnetic flux density of each of the plurality of intermediate members is higher than a saturation magnetic flux density of each of the plurality of permanent magnets.

摘要翻译： 线性致动器包括线圈部分和轴部分。 线圈部分包括分别施加有彼此具有不同相位的交流电流的多个线圈。 轴部分穿过多个线圈的内部。 轴部包括：多个永磁体和多个中间构件。 多个永磁体沿着中心轴线C布置，使得相反的磁化方向在中心轴线C的方向上彼此相对。多个中间构件中的每一个布置在多个永磁体的相邻两个之间。 多个中间构件的饱和磁通密度高于多个永磁体的饱和磁通密度。

公开(公告)号：US07985700B2

公开(公告)日：2011-07-26

申请号：US12314279

申请日：2008-12-08

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31695

摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

摘要翻译： 一种制造半导体器件的方法，该半导体器件利用在衬底上形成多孔材料的第一绝缘膜的步骤; 在第一绝缘膜上形成包含含有Si-CH3键的硅化合物30-90％的第二绝缘膜的步骤，以及用形成在第一绝缘膜上的第二绝缘膜照射UV辐射的步骤，以固化第一绝缘膜 绝缘膜。 因此，具有消除CH 3基团的波长的紫外线辐射被第二绝缘膜充分吸收，由此通过UV固化优先地高度强化第一绝缘膜，并且第一绝缘膜可以具有不增加电介质的膜密度 常数增加。

公开(公告)号：US20110068471A1

公开(公告)日：2011-03-24

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并在形成有阻挡层的开口中形成铜的互连结构。

公开(公告)号：US07875981B2

公开(公告)日：2011-01-25

申请号：US12037439

申请日：2008-02-26

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： H01L23/485

CPC分类号： H01L21/31695 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2924/0002 ,  C08L2666/54 ,  H01L2924/00

摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

摘要翻译： 为了提供一种绝缘膜材料，其可以有利地用于形成具有低介电常数和优异的耐腐蚀性（如抗蚀刻性和耐液体试剂）的绝缘膜，其中互连之间的寄生电容可以 减少用于制造多层互连结构的有效方法，以及用于制造具有高速度和可靠性的半导体器件的有效方法。 绝缘膜材料至少含有具有由下述结构式（1）表示的空间结构的硅化合物。 其中，R 1，R 2，R 3和R 4可以相同或不同，并且它们中的至少一个表示含有任何烃和不饱和烃的官能团。

公开(公告)号：US20100176496A1

公开(公告)日：2010-07-15

申请号：US12728480

申请日：2010-03-22

申请人： Shirou Ozaki ,  Yoshihiro Nakata

发明人： Shirou Ozaki ,  Yoshihiro Nakata

IPC分类号： H01L23/532

CPC分类号： H01L21/31695 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/76829 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1 and R2 is replaced by a substituent capable of absorbing exposure light. (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

摘要翻译： 提供一种用于形成曝光遮光膜的材料，其包括由以下结构式（1）表示的硅化合物和由以下结构式（2）表示的硅化合物中的至少一种，其中R 1 并且R 2被能够吸收曝光的取代基取代。 （其中R 1和R 2可以相同或不同，并且各自表示任选被取代的氢原子，烷基，烯基，环烷基和芳基中的任一个，n是2以上的整数）（其中， R 1，R 2和R 3可以相同或不同，R 1，R 2和R 3中的至少一个表示氢原子，其余表示任选被取代的烷基，烯基，环烷基和芳基中的任一个， n为2以上的整数）

公开(公告)号：US20100140807A1

公开(公告)日：2010-06-10

申请号：US12648804

申请日：2009-12-29

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H05K1/03 ,  C23F1/00 ,  H01L21/50 ,  C07F7/10

CPC分类号： H01L21/3121 ,  C08G77/60 ,  C09D183/16 ,  H01B3/46 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/4857 ,  H01L21/76807 ,  H01L21/76829 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/4676 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

摘要： An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

摘要翻译： 一种绝缘膜材料，其含有由以下结构式1表示的聚碳硅烷化合物; 其中R1可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳香烃; R2可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳族烃; n为5〜5000的整数。

公开(公告)号：US20090061633A1

公开(公告)日：2009-03-05

申请号：US12199297

申请日：2008-08-27

申请人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

发明人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

IPC分类号： H01L21/311

CPC分类号： H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76883

摘要： According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam.

摘要翻译： 根据实施例的一个方面，制造半导体器件的方法具有：形成包含二氧化硅基绝缘材料的绝缘层，加工绝缘层，通过施加硅烷化合物作用在绝缘层上使绝缘层疏水化; 并用光或电子束照射绝缘层。