公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

Applicant: Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L31/109

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US20100155698A1

公开(公告)日：2010-06-24

申请号：US12459177

申请日：2009-06-26

Applicant: Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L29/12 ,  H01L21/20

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Abstract translation: 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US08502195B2

公开(公告)日：2013-08-06

申请号：US13179885

申请日：2011-07-11

Applicant: Nanditha Dissanayake ,  Zhaohui Zhong

Inventor： Nanditha Dissanayake ,  Zhaohui Zhong

IPC: H01L29/06

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/4253 ,  Y02E10/549

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract translation: 包括（SWNTs）/聚[3-己基噻吩-2,5-二基]（P3HT）混合光伏在单壁或多壁碳纳米管中有效的光电流产生的系统，方法和装置，并且具有以下特征： 单个SWNT / P3HT异质结的光电流测量表明半导体（s-）和金属（m-）SWNTs都用作优异的空穴受体; 电传输和栅极电压依赖光电流表明P3HT p掺杂s-SWNT和m-SWNT，并且激子解离由异质结内的电压驱动。 一些实施例包括使用水平对准的SWNT阵列的mm2尺度的SWNT / P3HT双层混合光伏，其显示出大于90％的有效外部量子效率，其有利地提供基于碳纳米材料的低成本和高效率混合光伏。

公开(公告)号：US20120225296A1

公开(公告)日：2012-09-06

申请号：US13225135

申请日：2011-09-02

Applicant: Zhaohui Zhong ,  Seunghyun Lee ,  Kyunghoon Lee

Inventor： Zhaohui Zhong ,  Seunghyun Lee ,  Kyunghoon Lee

IPC: B32B9/04 ,  H01L29/12 ,  B32B37/14 ,  C23C16/26 ,  H01B1/04 ,  H01L21/20 ,  C23C16/01 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01L21/0262 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186 ,  C01B2204/32 ,  C23C16/0209 ,  C23C16/26 ,  C23C16/45502 ,  C23C16/45557 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02527 ,  Y10T428/30

Abstract: A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that have the same number of layers of graphene throughout substantially the entire film. Uniform bilayer graphene may be produced using a method that does not require assembly of independently produced single layer graphene. The method includes a CVD process wherein a reaction gas is flowed in the chamber at a relatively low pressure compared to conventional processes and the temperature in the reaction chamber is thereafter decreased relatively slowly compared to conventional processes. One application for uniform multilayer graphene is transparent conductors. In processes that require multiple transfers of single layer graphene to achieve multilayer graphene structures, the disclosed method can reduce the number of process steps by at least half.

Abstract translation: 提供了通过化学气相沉积（CVD）制造均匀的多层石墨烯的方法。 该方法仅通过CVD反应室尺寸限制，并且可扩展以在基片上生产具有相同数量的石墨烯层的多晶石墨烯薄膜。 可以使用不需要组装独立生产的单层石墨烯的方法来生产均匀的双层石墨烯。 该方法包括CVD方法，其中与常规方法相比，反应气体在相对低的压力下在室中流动，然后与常规方法相比，反应室中的温度相对较慢地降低。 均匀多层石墨烯的一个应用是透明导体。 在需要多次转移单层石墨烯以实现多层石墨烯结构的方法中，所公开的方法可以将工艺步骤的数量减少至少一半。

公开(公告)号：US20090057650A1

公开(公告)日：2009-03-05

申请号：US12072844

申请日：2008-02-27

Applicant: Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L29/66

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Abstract translation: 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US10886126B2

公开(公告)日：2021-01-05

申请号：US13225135

申请日：2011-09-02

Applicant: Zhaohui Zhong ,  Seunghyun Lee ,  Kyunghoon Lee

Inventor： Zhaohui Zhong ,  Seunghyun Lee ,  Kyunghoon Lee

IPC: B32B9/00 ,  H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  B82Y40/00 ,  C23C16/02 ,  B82Y30/00 ,  C01B32/184 ,  C01B32/186

Abstract: A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that have the same number of layers of graphene throughout substantially the entire film. Uniform bilayer graphene may be produced using a method that does not require assembly of independently produced single layer graphene. The method includes a CVD process wherein a reaction gas is flowed in the chamber at a relatively low pressure compared to conventional processes and the temperature in the reaction chamber is thereafter decreased relatively slowly compared to conventional processes. One application for uniform multilayer graphene is transparent conductors. In processes that require multiple transfers of single layer graphene to achieve multilayer graphene structures, the disclosed method can reduce the number of process steps by at least half.

公开(公告)号：US20120007046A1

公开(公告)日：2012-01-12

申请号：US13179885

申请日：2011-07-11

Applicant: Nanditha Dissanayake ,  Zhaohui Zhong

Inventor： Nanditha Dissanayake ,  Zhaohui Zhong

IPC: H01L51/44 ,  H01L51/48 ,  B82Y40/00 ,  B82Y15/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/4253 ,  Y02E10/549

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract translation: 包括（SWNTs）/聚[3-己基噻吩-2,5-二基]（P3HT）混合光伏在单壁或多壁碳纳米管中有效的光电流产生的系统，方法和装置，并且具有以下特征： 单个SWNT / P3HT异质结的光电流测量表明半导体（s-）和金属（m-）SWNTs都用作优异的空穴受体; 电传输和栅极电压依赖光电流表明P3HT p掺杂s-SWNT和m-SWNT，并且激子解离由异质结内的电压驱动。 一些实施例包括使用水平对准的SWNT阵列的mm2尺度的SWNT / P3HT双层混合光伏，其显示出大于90％的有效外部量子效率，其有利地提供基于碳纳米材料的低成本和高效率混合光伏。

公开(公告)号：US20070281156A1

公开(公告)日：2007-12-06

申请号：US11386080

申请日：2006-03-21

Applicant: Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: D02G3/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  C30B11/00 ,  C30B25/00 ,  C30B25/005 ,  C30B29/60 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C11/56 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/267 ,  H01L29/73 ,  H01L29/7781 ,  H01L29/78696 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L51/0048 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y02E10/549 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/958 ,  Y10T428/2929 ,  Y10T428/298 ,  H01L2924/00

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US07301199B2

公开(公告)日：2007-11-27

申请号：US10196337

申请日：2002-07-16

Applicant: Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/06

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  C30B11/00 ,  C30B25/00 ,  C30B25/005 ,  C30B29/60 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C11/56 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/267 ,  H01L29/73 ,  H01L29/7781 ,  H01L29/78696 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L51/0048 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y02E10/549 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/958 ,  Y10T428/2929 ,  Y10T428/298 ,  H01L2924/00

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Abstract translation: 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。