公开(公告)号：US20180040459A1

公开(公告)日：2018-02-08

申请号：US15425014

申请日：2017-02-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Masahito MORI ,  Takao ARASE ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32724 ,  H01J37/32871 ,  H01J2237/334

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

公开(公告)号：US20180082825A1

公开(公告)日：2018-03-22

申请号：US15443488

申请日：2017-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hayato WATANABE ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  B08B7/00 ,  B08B9/46

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  B08B9/46 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

公开(公告)号：US20180047595A1

公开(公告)日：2018-02-15

申请号：US15558005

申请日：2016-04-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Masahito MORI ,  Toshiaki NISHIDA ,  Ryoji HAMASAKI

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32 ,  H01L27/115

Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV.The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.

公开(公告)号：US20160141183A1

公开(公告)日：2016-05-19

申请号：US15003706

申请日：2016-01-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Masaru IZAWA ,  Katsushi YAGI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32706 ,  H03H7/40 ,  H05H2001/4682

Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.

公开(公告)号：US20150357210A1

公开(公告)日：2015-12-10

申请号：US14832239

申请日：2015-08-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito MORI ,  Akira HIRATA ,  Koichi YAMAMOTO ,  Takao ARASE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32926 ,  H01J37/3299

Abstract: There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.

Abstract translation: 提供了一种用于控制等离子体处理装置的方法，即使在多步骤蚀刻中，也能够在保持低污染和高均匀性的同时消除对共振点的初步研究。 在一种用于控制等离子体处理装置的方法中，包括调整携带到对侧天线电极的射频偏置电流的步骤，该方法包括以下步骤：将可变元件的电抗设定为初始值; 检测携带到所述对置天线电极的偏置电流; 搜索检测到的电流的最大值; 并将可变元件的电抗值从最大值调整到设定值，然后固定该值。

公开(公告)号：US20210111002A1

公开(公告)日：2021-04-15

申请号：US16463531

申请日：2018-05-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuki KONDO ,  Kenetsu YOKOGAWA ,  Masahito MORI ,  Satoshi UNE ,  Kazunori NAKAMOTO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.

公开(公告)号：US20200234924A1

公开(公告)日：2020-07-23

申请号：US15755338

申请日：2017-03-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Masahito MORI

IPC: H01J37/32

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

公开(公告)号：US20180068862A1

公开(公告)日：2018-03-08

申请号：US15558045

申请日：2017-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi TERAKURA ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H05H1/46 ,  H05H2001/469

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

公开(公告)号：US20150348763A1

公开(公告)日：2015-12-03

申请号：US14727265

申请日：2015-06-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.

Abstract translation: 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器，放置在真空反应器的处理室内的下电极，并且其上表面具有要蚀刻的晶片，偏压供应单元和用于提供用于形成偏置电位的高频功率 下电极，用于将反应性气体供给到处理室中的气体供给装置，用于在处理室中提供用于产生等离子体的磁场的电场供给装置，以及用于控制等离子体中的离子能分布的控制单元 通过高频功率入射到晶片上。

公开(公告)号：US20140102640A1

公开(公告)日：2014-04-17

申请号：US13953924

申请日：2013-07-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ken'etsu YOKOGAWA ,  Masahito MORI ,  Takao ARASE

IPC: H01L21/02

Abstract: A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6, a gas supply means and a lower electrode 1, wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10, and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7, and the gas through holes 8 and the gas through holes 10 are connected through a groove 9, and wherein the gas supply through holes 6, the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane.

Abstract translation: 在宽范围的工艺条件下具有稳定的等离子体生成并且均匀性和再现性优异的等离子体处理装置包括具有气体供应通孔6，气体供应装置和下部电极1的上部电极3，其中气体供应装置 包括具有气体通孔8的平面状构件4和具有气体通孔10的平面状构件5，气体供给通孔6和气体通孔8通过槽7连接，气体通孔 8和气体通孔10通过槽9连接，其中气体供应通孔6，气体通孔8和气体通孔10设置在平面上彼此不同的位置。