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1.发明授权Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效使用等离子体聚合的有机硅膜制造剥离掩模
公开(公告)号：US4599243A
公开(公告)日：1986-07-08
申请号：US668361
申请日：1984-11-05
CPC分类号： G03F7/094 , Y10S438/951
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译： 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。
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2.发明授权
公开(公告)号：US4562091A
公开(公告)日：1985-12-31
申请号：US668360
申请日：1984-12-18
CPC分类号： G03F7/094
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译： 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。
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公开(公告)号：US5115090A
公开(公告)日：1992-05-19
申请号：US503401
申请日：1990-03-30
申请人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
发明人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
IPC分类号： C08G73/10 , C08L79/08 , H01L21/312 , H01L23/29 , H01L23/498 , H01L23/532 , H05K1/00
CPC分类号： H01L23/5329 , C08G73/1014 , H01L23/293 , H01L23/49894 , H01L2924/0002 , H05K3/4676
摘要： Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.
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公开(公告)号：US5114826A
公开(公告)日：1992-05-19
申请号：US458130
申请日：1989-12-28
IPC分类号： C08F2/46 , C08G73/10 , C08K5/23 , C08K5/28 , C08L79/08 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/26 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0758 , G03F7/0387 , G03F7/039 , H01L2224/11334
摘要： New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.
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5.发明授权
公开(公告)号：US4665006A
公开(公告)日：1987-05-12
申请号：US806597
申请日：1985-12-09
CPC分类号： G03F7/0757 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
摘要翻译： 公开了一种光致抗蚀剂组合物，其包含具有由鎓盐敏化的有机聚硅氧烷部分的可辐射可分裂聚合物体系。 有用的含有机聚硅氧烷的聚合物包括聚硅氧烷 - 聚碳酸酯嵌段共聚物和聚有机硅氧烷聚芳酯。 由光致抗蚀剂组合物制成的抗蚀剂膜显示出高灵敏度，高热稳定性和耐氧反应离子蚀刻性能，这使得它们对于干蚀刻工艺是可取的，以实现亚微米分辨率。
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6.发明授权
公开(公告)号：US5422223A
公开(公告)日：1995-06-06
申请号：US274572
申请日：1994-07-13
IPC分类号： G03F7/023 , C08G77/388 , C08G77/392 , G03F7/075 , H01L21/027 , H01L21/30 , G03F7/021 , G03F7/36
CPC分类号： C08G77/392 , C08G77/388 , G03F7/075 , G03F7/0757
摘要： Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.
摘要翻译： 包含羟基苯基倍半硅氧烷和与用于可成像的O 2 RIE阻挡膜的重氮萘醌磺酰氧基部分酯化的硅氧烷的光敏含硅抗蚀剂组合物。 还提供了使用这些感光性含硅抗蚀剂组合物在基板上形成图案的方法。
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公开(公告)号：US4826564A
公开(公告)日：1989-05-02
申请号：US115140
申请日：1987-10-30
申请人： Brian H. Desilets , Richard D. Kaplan , Harbans S. Sachdev , Krishna G. Sachdev , Susan A. Sanchez
发明人： Brian H. Desilets , Richard D. Kaplan , Harbans S. Sachdev , Krishna G. Sachdev , Susan A. Sanchez
IPC分类号： H01L21/302 , G03F7/09 , H01B13/00 , H01L21/3065 , B05D3/06
CPC分类号： G03F7/094 , Y10S438/95
摘要： A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.
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公开(公告)号：US4772346A
公开(公告)日：1988-09-20
申请号：US115568
申请日：1987-10-29
申请人： Herbert R. Anderson, Jr. , Constance J. Araps , Renuka S. Divakaruni , Daniel P. Kirby , Robert W. Nufer , Harbans S. Sachdev , Krishna G. Sachdev , Darbha Suryanarayana , Stoyan M. Zalar
发明人： Herbert R. Anderson, Jr. , Constance J. Araps , Renuka S. Divakaruni , Daniel P. Kirby , Robert W. Nufer , Harbans S. Sachdev , Krishna G. Sachdev , Darbha Suryanarayana , Stoyan M. Zalar
IPC分类号： C03C10/00 , C04B35/628 , C04B35/63 , C04B35/632 , C04B35/634 , H01L21/48 , H05K1/03 , C04B35/00
CPC分类号： C04B35/6268 , C03C10/00 , C04B35/195 , C04B35/628 , C04B35/62807 , C04B35/6316 , C04B35/6325 , C04B35/634 , C04B35/6342 , C04B35/638 , H01L21/4807 , H05K1/0306 , C04B2235/3232 , C04B2235/3481 , C04B2235/449 , C04B2235/5436 , C04B2235/6025 , C04B2235/6562 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/9661
摘要： In a process for forming elements from a slurry that includes particulate ceramic and/or glass, an organic binder resin, and a solvent for the resin, where the element is shaped from the slurry, and the element heated to remove the organic materials of the slurry and subsequently fuse the ceramic and/or glass particles, the improvement comprised of coating the ceramic and/or glass particles prior to forming the slurry with a surface modification compound selected from the group consisting of organo silanes, organo silazanes, titanium chelates, titanium esters, and mixtures thereof.
摘要翻译： 在由浆料形成元件的方法中，该浆料包括颗粒陶瓷和/或玻璃，有机粘合剂树脂和用于树脂的溶剂，其中元件由浆料成形，并且元件被加热以除去 浆料并随后熔化陶瓷和/或玻璃颗粒，其改进包括在用选自有机硅烷，有机硅氮烷，钛螯合物，钛的钛的表面改性化合物形成浆料之前涂覆陶瓷和/或玻璃颗粒 酯及其混合物。
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9.发明授权Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane 失效使用包含感光性聚倍半硅氧烷的双层抗蚀剂组合物通过光学光刻形成半微米图案的方法
公开(公告)号：US5399462A
公开(公告)日：1995-03-21
申请号：US274571
申请日：1994-07-13
申请人： Krishna G. Sachdev , Premlatha Jagannathan , Robert N. Lang , Harbans S. Sachdev , Ratnam Sooriyakumaran , Joel R. Whitaker
发明人： Krishna G. Sachdev , Premlatha Jagannathan , Robert N. Lang , Harbans S. Sachdev , Ratnam Sooriyakumaran , Joel R. Whitaker
IPC分类号： G03F7/022 , C08G77/388 , G03F7/027 , G03F7/037 , G03F7/039 , G03F7/075 , G03F7/09 , G03F7/26 , H01L21/027 , H01L21/30 , G03F7/30 , G03F7/023 , G03F7/36
CPC分类号： C08G77/388 , G03F7/0757 , G03F7/091 , G03F7/094
摘要： A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.
摘要翻译： 提供了一种在双层抗蚀剂组合物中形成具有小于半微米宽度的微光刻浮雕图像的方法。 抗蚀剂组合物包含具有高的光密度和类似于覆盖抗蚀剂的折射率的折射率的单一组分，含硅光可成像层和聚合物底层。 该方法提供了使用i线（365nm）或深紫外（170至300nm）光源在顶层中形成浮雕图像，随后将浮雕图像的O2 RIE转移到聚合物底层中。
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10.发明授权Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings 失效含硅聚酰亚胺作为氧蚀刻停止和双电介质涂层
公开(公告)号：US4692205A
公开(公告)日：1987-09-08
申请号：US824893
申请日：1986-01-31
IPC分类号： H01L21/302 , G03F7/075 , G03F7/09 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , B29C37/00
CPC分类号： G03F7/094 , G03F7/0757 , H01L21/0272 , H01L21/31138 , H01L21/3121 , H01L21/7688 , H01L21/76885 , Y10S428/901 , Y10S438/95 , Y10S438/97 , Y10T29/49155 , Y10T428/12396 , Y10T428/12528 , Y10T428/31721
摘要： The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.
摘要翻译： 描述了在制造多层金属结构中使用含硅聚酰亚胺作为金属剥离工艺中的氧蚀刻阻挡层和作为氧蚀刻停止。 实际上，将剥离层施加在基底上，随后是一层含硅聚酰亚胺和一层光致抗蚀剂。 光致抗蚀剂被光刻图案化，并且使用CF 4 / O 2气体混合物通过反应离子蚀刻将显影的图像转移到含硅聚酰亚胺层中。 在使用氧的反应离子蚀刻工艺中将图案转移到剥离层。 随后的毯式金属蒸发，随后去除剥离模板，导致基材上所需的金属图案。 在替代实施例中，含硅聚酰亚胺可以掺杂光活性化合物，减少了在顶部上分离的光致抗蚀剂成像层的需要。
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