公开(公告)号：US20180261710A1

公开(公告)日：2018-09-13

申请号：US15976308

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/072 ,  H01L31/032

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20160300965A1

公开(公告)日：2016-10-13

申请号：US15189925

申请日：2016-06-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

Inventor： SHUN-MING CHEN ,  CHIEN-CHIH HUANG ,  JOEL P. DESOUZA ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  CHIEN-YEH KU ,  DEVENDRA K. SADANA ,  CHUAN-WEN WANG

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/075

CPC classification number: H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Abstract translation: 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。

公开(公告)号：US20160079456A1

公开(公告)日：2016-03-17

申请号：US14949230

申请日：2015-11-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0376 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/03767 ,  H01L31/022466 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

公开(公告)号：US20180261711A1

公开(公告)日：2018-09-13

申请号：US15976331

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/072 ,  H01L31/032

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20180006180A1

公开(公告)日：2018-01-04

申请号：US15705905

申请日：2017-09-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  CHENG-WEI CHENG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU ,  NORMA E. SOSA CORTES

IPC: H01L31/0687 ,  H01L31/18

Abstract: A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

公开(公告)号：US20170288071A1

公开(公告)日：2017-10-05

申请号：US15622515

申请日：2017-06-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/075 ,  H01L31/077 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

公开(公告)号：US20160111576A1

公开(公告)日：2016-04-21

申请号：US14976798

申请日：2015-12-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/077 ,  H01L31/056 ,  H01L31/0224

CPC classification number: H01L31/077 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/515 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/065 ,  H01L31/1816 ,  H01L31/20 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US20150255641A1

公开(公告)日：2015-09-10

申请号：US14710149

申请日：2015-05-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract translation: 一种光电器件和方法包括在衬底中形成多个柱结构，在柱结构上形成第一电极层，并在第一衬底上形成包括N型层，P型层和本征层的连续光伏堆叠 电极。 第二电极层沉积在光伏堆叠上，使得在柱结构之间的第二电极层中出现间隙或裂缝。 湿蚀刻第二电极层以打开间隙或裂缝并且减小第二电极层以在光伏堆叠上形成基本上均匀厚度的三维电极。

公开(公告)号：US20190214519A1

公开(公告)日：2019-07-11

申请号：US16299957

申请日：2019-03-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/077 ,  H01L31/0224 ,  H01L31/20 ,  C23C16/02 ,  C23C16/50 ,  H01L31/056 ,  H01L31/18 ,  H01L31/065 ,  H01L31/0368 ,  C23C16/515 ,  C23C16/455 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/0216 ,  H01L21/02

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US20170005210A1

公开(公告)日：2017-01-05

申请号：US14755803

申请日：2015-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TALIA S. GERSHON ,  OKI GUNAWAN ,  JEEHWAN KIM ,  YUN SEOG LEE

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/0224

CPC classification number: H01L31/02966 ,  H01L31/02963 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/1832 ,  Y02E10/541

Abstract: A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type layer includes a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer. A transparent contact is formed on the n-type layer.

Abstract translation: 光电器件包括衬底，形成在衬底上的第一电极和包含硫族化合物的p型吸收层。 n型层包括氧化硫化锌材料，其硫含量被调节以匹配吸收层的特征。 在n型层上形成透明接触。