Thin film type varistor and a method of manufacturing the same
    1.
    发明授权
    Thin film type varistor and a method of manufacturing the same 失效
    薄膜型压敏电阻及其制造方法

    公开(公告)号:US08242875B2

    公开(公告)日:2012-08-14

    申请号:US12740624

    申请日:2008-08-20

    IPC分类号: H01C7/10

    摘要: A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

    摘要翻译: 提供薄膜型压敏电阻及其制造方法。 该方法包括:通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。 因此,可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺,从而应用于高度集成的电路。

    THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME 失效
    薄膜型变压器及其制造方法

    公开(公告)号:US20100259357A1

    公开(公告)日:2010-10-14

    申请号:US12740624

    申请日:2008-08-20

    IPC分类号: H01C7/10 H01C17/06

    摘要: A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

    摘要翻译: 提供薄膜型压敏电阻及其制造方法。 该方法包括:通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。 因此,可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺,从而应用于高度集成的电路。

    Method of Manufacturing Vanadium Oxide Thin Film
    3.
    发明申请
    Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
    制造氧化钒薄膜的方法

    公开(公告)号:US20090011145A1

    公开(公告)日:2009-01-08

    申请号:US12064807

    申请日:2006-08-23

    IPC分类号: C23C16/513 C23C16/00

    摘要: Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.

    摘要翻译: 提供一种具有均匀的表面,均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。 根据该方法,将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。 之后,向室内注入氧前体,由此与吸附材料进行表面饱和反应,制作氧化钒薄膜。

    Method for forming gate dielectric layer
    5.
    发明申请
    Method for forming gate dielectric layer 失效
    形成栅介质层的方法

    公开(公告)号:US20050142712A1

    公开(公告)日:2005-06-30

    申请号:US10909339

    申请日:2004-08-03

    摘要: Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.

    摘要翻译: 提供了一种用于形成栅介电层的方法,其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层,并沉积原子层沉积(ALD)氧化物层。 此外,根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置,具有良好的界面特性,并且可以向其施加高介电层。

    Method for forming gate dielectric layer
    7.
    发明授权
    Method for forming gate dielectric layer 失效
    形成栅介质层的方法

    公开(公告)号:US07662683B2

    公开(公告)日:2010-02-16

    申请号:US10909339

    申请日:2004-08-03

    摘要: Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.

    摘要翻译: 提供了一种用于形成栅介电层的方法,其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层,并沉积原子层沉积(ALD)氧化物层。 此外,根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置,具有良好的界面特性,并且可以向其施加高介电层。

    Method of forming a thin film in a semiconductor device
    8.
    发明授权
    Method of forming a thin film in a semiconductor device 有权
    在半导体器件中形成薄膜的方法

    公开(公告)号:US06730614B1

    公开(公告)日:2004-05-04

    申请号:US10645671

    申请日:2003-08-22

    IPC分类号: H01L2131

    摘要: The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.

    摘要翻译: 本发明涉及在半导体器件中形成薄膜的方法。 根据该方法,通过交替重复原子层沉积(ALD)法和等离子体增强原子层沉积(PEALD)方法形成薄膜,并进一步通过调节方法的重复次数比例,从而可以 调整和估计生长速率,密度和材料性质如折射率,介电常数,电阻等。

    THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME 审中-公开
    使用辐射热作为热源的热电装置及其制造方法

    公开(公告)号:US20100294327A1

    公开(公告)日:2010-11-25

    申请号:US12773226

    申请日:2010-05-04

    CPC分类号: H01L35/30 H01L35/32

    摘要: Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved.

    摘要翻译: 提供了使用辐射热作为热源的热电装置及其制造方法。 在热电装置中,形成在吸热层上的防反射层使得尽可能多的辐射光被吸收层吸收,而不会反射到外部,从而可以提高辐射吸收效率。 此外,在热电装置中,形成在散热层上的绝缘层和形成在绝缘层上的第一反射层可以防止外部辐射热被散热层吸收,并且多少辐射热传递到散热 层可以通过与散热层热连接的第二反射层从散热层消散,从而可以提高辐射热发射效率。