摘要:
A semiconductor laser including a stripe-shaped active layer, a clad region, and a diffraction grating. The stripe-shaped active layer has a thickness in a first direction, has a first energy gap, and extends in a second direction orthogonal to the first direction. The clad region surrounds the stripe-shaped active layer, and has a second energy band gap greater than the first energy band gap. The diffraction grating is provided in parallel with and adjacent to, the stripe-shaped active layer. The stripe-shaped active layer has a first portion with a first light propagation constant and with a first dimension in a third direction orthogonal to the first and second directions, and has a second portion with a second light propagation constant and with a second dimension in the third direction. The first dimension and the second dimension are different from each other. The second portion has a length L in the second direction. The stripe-shaped active layer satisfies the condition that a product of .DELTA..beta. and L is an odd multiple of .pi./2, where .DELTA..beta. is a difference between the first and second light propagation constants.
摘要:
A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
摘要:
An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer has first regions located immediately under the modulating electrodes, and second regions located between the first regions. The second regions have separators that electrically separate the first regions from one another.
摘要:
A directional coupler type optical modulator with traveling-wave electrodes includes a first directional coupler region, a waveguide wave coupling region, a second directional coupler region, and a set of noncrossing traveling-wave electrodes disposed along the outside of the waveguides. The electrodes of each directional coupler are connected to the traveling-wave electrodes via air-bridges. The waveguide structures are of the P-I-N type having a common N-type conducting layer which provides delta-beta operation of the directional coupler, and both cross and bar states are controlled by a single input signal.
摘要:
An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.
摘要:
A directional coupler type optical modulator with traveling-wave electrodes includes a first directional coupler region, a waveguide wave coupling region, a second directional coupler region, and a set of noncrossing traveling-wave electrodes disposed along the outside of the waveguides. The electrodes of each directional coupler are connected to the traveling-wave electrodes via air-bridges. The waveguide structures are of the P-I-N type having a common N-type conducting layer which provides delta-beta operation of the directional coupler, and both cross and bar states are controlled by a single input signal.
摘要:
A method of forming waveguides, refractive index distributions and optical couplings automatically by light incidence, and devices obtained thereby. A non-linear optical material which has excellent properties of a large degree of freedom for an optical circuit substrate composition, etc. is used for optical circuit devices and optical circuit substrates. A photoelectric device containing an organic conjugated polymer film is deposited on a substrate by vapor deposition polymerization as at least one function layer. An optical network is provided with optical wiring for exchanging signals between processing elements selected from electronic elements, electronic apparatuses, electrooptical elements and electrooptical apparatuses.
摘要:
An optical semiconductor device circuit including a MI-DFB-LD capable of minimizing an extension in the wavelength of the output light in order to improve transmission speed and distance. The optical device circuit includes a semiconductor laser diode; an optical modulator for modulating output light of the semiconductor laser diode; a resistive element which is connected to the laser diode and which operates as a resistor at a high frequency; common connection substrate connected to the semiconductor laser diode and to the optical modulator; impedance element or signal reflection element connected to the common connection substrate; and ground connected to the impedance element or the signal reflection element.
摘要:
A gain element and a variable wavelength reflector form a resonator. A wavelength selective element selects a resonance wavelength in the resonator. A beam splitter is provided for monitoring an incident light from the gain element and a reflected light from the variable wavelength reflector. A phase adjustment element is arranged in the resonator. A wavelength-lock control unit locks the resonance wavelength to a desired resonance wavelength by adjusting the phase of the resonance wavelength based on the monitored incident light and by adjusting the variable wavelength reflector based on a ratio between the incident light and the reflected light.
摘要:
A gain element and a variable wavelength reflector form a resonator. A wavelength selective element selects a resonance wavelength in the resonator. A beam splitter is provided for monitoring an incident light from the gain element and a reflected light from the variable wavelength reflector. A phase adjustment element is arranged in the resonator. A wavelength-lock control unit locks the resonance wavelength to a desired resonance wavelength by adjusting the phase of the resonance wavelength based on the monitored incident light and by adjusting the variable wavelength reflector based on a ratio between the incident light and the reflected light.