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    SUPPRESSING FRACTURES IN DICED INTEGRATED CIRCUITS
    5.
    发明申请
    SUPPRESSING FRACTURES IN DICED INTEGRATED CIRCUITS 审中-公开
    在集成电路中抑制断裂

    公开(公告)号：US20110006389A1

    公开(公告)日：2011-01-13

    申请号：US12499546

    申请日：2009-07-08

    申请人： Mark A. Bachman ,  John W. Osenbach

    发明人： Mark A. Bachman ,  John W. Osenbach

    IPC分类号： H01L29/06 ,  H01L21/3205

    CPC分类号： H01L23/585 ,  H01L23/3128 ,  H01L23/5329 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

    摘要： A semiconductor device has a singulated die having a substrate and a die edge. An interconnect dielectric layer is located on the substrate, and integrated circuit has interconnections located within the interconnect dielectric layer. A trench is located in the interconnect dielectric layer and between a seal ring and a remnant of the interconnect dielectric layer. The seal ring is located within the interconnect dielectric layer and between the trench and the integrated circuit, with the remnant of the interconnect dielectric layer being located between the trench and the edge of the die.

    摘要翻译： 半导体器件具有具有基板和裸片边缘的单模裸片。 互连电介质层位于衬底上，并且集成电路具有位于互连电介质层内的互连。 沟槽位于互连电介质层中，并且位于密封环和互连电介质层的残余物之间。 密封环位于互连电介质层内，并且位于沟槽和集成电路之间，互连电介质层的残余物位于沟槽和管芯的边缘之间。

    Integration of shallow trench isolation and through-substrate vias into integrated circuit designs
    6.
    发明授权
    Integration of shallow trench isolation and through-substrate vias into integrated circuit designs 有权
    将浅沟槽隔离和贯通衬底通孔集成到集成电路设计中

    公开(公告)号：US08742535B2

    公开(公告)日：2014-06-03

    申请号：US12969852

    申请日：2010-12-16

    申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

    发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

    IPC分类号： H01L23/52 ,  H01L21/76 ,  H01L21/44

    CPC分类号： H01L21/76224 ,  H01L21/76837 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/1005 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously.

    摘要翻译： 一种制造IC的方法，包括提供具有第一侧和第二相对侧的衬底，在衬底的第一侧中形成STI开口，并在衬底的第一侧形成部分TSV开口，并延伸部分TSV 开放 扩展的部分TSV开口比STI开口更深入衬底。 该方法还包括用第一固体材料填充STI开口并用第二固体材料填充延伸的部分TSV开口。 STI打开，部分TSV打开，也不延伸部分TSV开口都不穿透基板的第二侧的外表面。 至少同时形成STI开口和部分TSV开口，或者同时填充STI开口和延伸部分TSV开口。

    Method of fabrication of through-substrate vias
    8.
    发明授权
    Method of fabrication of through-substrate vias 有权
    贯穿基板通孔的制造方法

    公开(公告)号：US08987137B2

    公开(公告)日：2015-03-24

    申请号：US12969836

    申请日：2010-12-16

    申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

    发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

    IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L25/065

    CPC分类号： H01L21/76898 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541

    摘要： A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material.

    摘要翻译： 一种制造贯通基板通孔结构的方法。 该方法包括提供具有前侧和相对背面的基板。 在基板的前侧形成贯通基板通路孔。 贯通基板通孔开口不穿透基板背面的外表面。 贯通基板通孔开口填充有固体填充材料。 从衬底的背面的外表面去除衬底的部分，从而露出填充材料。 暴露的填充材料的至少部分被去除以形成穿过衬底的整个厚度的背面贯穿衬底通孔开口。 背面贯通基板通孔开口填充有导电材料。