公开(公告)号：US20220130893A1

公开(公告)日：2022-04-28

申请号：US17434511

申请日：2020-03-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  Bruno Jentzsch

IPC: H01L27/15 ,  H01L33/00 ,  H01S5/0239

Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.

公开(公告)号：US09887180B2

公开(公告)日：2018-02-06

申请号：US15009744

申请日：2016-01-28

Applicant: OSRAM Opto Semiconductors GmbH ,  X-Celeprint Limited

Inventor： Matthew Meitl ,  Christopher Bower ,  Tansen Varghese

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L21/78 ,  H01L33/56 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

CPC classification number: H01L25/0753 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0091

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the method includes applying a semiconductor layer sequence on a substrate, structuring the semiconductor layer sequence by forming trenches thereby separating the semiconductor layer sequence into a plurality of semiconductor bodies and applying an insulating layer covering the trenches and vertical surfaces of the plurality of semiconductor bodies. The method further includes forming a plurality of tethers by structuring the insulating layer in regions covering the trenches, locally detaching the substrate from the plurality of semiconductor bodies, wherein the tethers remain attached to the substrate and selectively picking up each semiconductor body by separating the tethers from the substrate, wherein each semiconductor body comprises a portion of the semiconductor layer sequence.

公开(公告)号：US09812619B2

公开(公告)日：2017-11-07

申请号：US14769060

申请日：2014-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jürgen Moosburger ,  Thomas Schwarz ,  Hans-Jürgen Lugauer ,  Tansen Varghese ,  Stefan Illek

IPC: H01L29/18 ,  H01L33/58 ,  H01L33/54 ,  H01L21/78 ,  H01L25/075 ,  H01L25/00 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/58 ,  H01L21/78 ,  H01L25/0753 ,  H01L25/50 ,  H01L33/005 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

公开(公告)号：US12094916B2

公开(公告)日：2024-09-17

申请号：US17310394

申请日：2020-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Tansen Varghese ,  Alvaro Gomez-Iglesias

IPC: H01L27/15 ,  H01L25/18

CPC classification number: H01L27/156 ,  H01L25/18

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

公开(公告)号：US20220320399A1

公开(公告)日：2022-10-06

申请号：US17632892

申请日：2020-07-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  Petrus Sundgren

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/08

Abstract: The invention relates to a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer. In addition, the first contact structure is designed for electrically contacting the first semiconductor layer and overlaps with the opening when viewed from above. The invention also relates to a method for producing a component of this type.

公开(公告)号：US11069835B2

公开(公告)日：2021-07-20

申请号：US16495803

申请日：2018-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adrian Stefan Avramescu ,  Tansen Varghese ,  Martin Straßburg ,  Hans-Jürgen Lugauer ,  Sönke Fündling ,  Jana Hartmann ,  Frederik Steib ,  Andreas Waag

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

公开(公告)号：US20200028029A1

公开(公告)日：2020-01-23

申请号：US16495803

申请日：2018-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adrian Stefan Avramescu ,  Tansen Varghese ,  Martin Straßburg ,  Hans-Jürgen Lugauer ,  Sönke Fündling ,  Jana Hartmann ,  Frederik Steib ,  Andreas Waag

IPC: H01L33/20 ,  H01L33/00 ,  H01L25/075

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

公开(公告)号：US10475773B2

公开(公告)日：2019-11-12

申请号：US15875955

申请日：2018-01-19

Applicant: OSRAM Opto Semiconductors GmbH ,  X-Celeprint Limited

Inventor： Matthew Meitl ,  Christopher Bower ,  Tansen Varghese

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L21/78 ,  H01L33/56 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the component includes a light transmissive carrier, a semiconductor body disposed on the light transmissive carrier, the semiconductor body including a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body includes a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the carrier and a contact structure including a first contact area and a second contact area arranged on the second main surface, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the contact structure comprises a via extending from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer.

公开(公告)号：US10347792B2

公开(公告)日：2019-07-09

申请号：US15743237

申请日：2016-07-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Philipp Kreuter ,  Tansen Varghese ,  Wolfgang Schmid ,  Markus Bröll

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/44 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/0216 ,  H01L33/58

Abstract: An optoelectronic component is disclosed. In an embodiment the component includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first and second layer, wherein the active layer directly borders the first and second layer, a radiation surface directly bordering the second layer, one or more contact isles for electrically contacting the first layer and one or more through-connections for electrically contacting of the second layer, wherein the through-connections are formed through the first layer and the active layer and open into the second layer, wherein the contact isles are located laterally next to one another directly on a rear side of the first layer facing away from the radiation surface, wherein the through-connections are arranged in regions between the contact isles in a top view of the rear side.

公开(公告)号：US11916167B2

公开(公告)日：2024-02-27

申请号：US17311643

申请日：2019-12-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  Wolfgang Schmid

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/44 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/44 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0091

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.