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    SEMICONDUCTOR DEVICES INCLUDING CONTACT PLUGS
    2.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING CONTACT PLUGS 审中-公开

    公开(公告)号：US20200126858A1

    公开(公告)日：2020-04-23

    申请号：US16724483

    申请日：2019-12-23

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Min Chan GWAK ,  Hwi Chan JUN ,  Heon Jong SHIN ,  So Ra YOU ,  Sang Hyun LEE ,  In Chan HWANG

    IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L29/417 ,  H01L23/528 ,  H01L23/522

    摘要： A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开

    公开(公告)号：US20190326180A1

    公开(公告)日：2019-10-24

    申请号：US16460127

    申请日：2019-07-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sang Hyun LEE ,  Jeong Yun LEE ,  Seung Ju PARK ,  Geum Jung SEONG ,  Young Mook OH ,  Seung Soo HONG

    IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423

    摘要： A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction. The semiconductor device includes a first gate structure on a substrate, the first gate structure extending lengthwise in a first direction to have two long sides and two short sides, relative to each other, and including a first gate spacer; a second gate structure on the substrate, the second gate structure extending lengthwise in the first direction to have two long sides and two short sides, relative to each other, and including a second gate spacer, wherein a first short side of the second gate structure faces a first short side of the first gate structure; and a gate insulating support disposed between the first short side of the first gate structure and the first short side of the second gate structure and extending lengthwise in a second direction different from the first direction, a length of the gate insulating support in the second direction being greater than a width of each of the first gate structure and the second gate structure in the second direction.

    METHOD AND APPARATUS WITH ERROR CORRECTION FOR DIMMABLE VISIBLE LIGHT COMMUNICATION
    7.
    发明申请
    METHOD AND APPARATUS WITH ERROR CORRECTION FOR DIMMABLE VISIBLE LIGHT COMMUNICATION 有权
    具有可见光通信的错误校正的方法和装置

    公开(公告)号：US20130308954A1

    公开(公告)日：2013-11-21

    申请号：US13893808

    申请日：2013-05-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Sang Hyun LEE

    IPC分类号： H03M13/00 ,  H04B10/116

    CPC分类号： H03M13/005 ,  H03M13/2957 ,  H03M13/6362 ,  H04B10/116

    摘要： An apparatus and method using error correcting for visible light communication are provided. The error correction includes generating an encoded message from an original message by using a predetermined coding method, puncturing the encoded message based on a determined dimming value or rate, and/or puncturing rate, generating a scrambled message by scrambling the punctured message, and providing the scrambled message to a visible light source.

    摘要翻译： 提供了一种使用可见光通信的纠错的装置和方法。 误差校正包括通过使用预定的编码方法从原始消息生成编码消息，基于所确定的调光值或速率对穿着编码消息进行打孔和/或打孔速率，通过对穿孔消息进行扰频产生加扰消息，并提供 将加扰的消息发送到可见光源。

    SEMICONDUCTOR DEVICES INCLUDING CONTACT PLUGS
    8.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING CONTACT PLUGS 有权

    公开(公告)号：US20210020509A1

    公开(公告)日：2021-01-21

    申请号：US17031279

    申请日：2020-09-24

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Min Chan GWAK ,  Hwi Chan JUN ,  Heon Jong SHIN ,  So Ra YOU ,  Sang Hyun LEE ,  In Chan HWANG

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L29/66

    摘要： A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.