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公开(公告)号:US12294002B2
公开(公告)日:2025-05-06
申请号:US18664483
申请日:2024-05-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Yun Hou , Sung-Hui Huang , Kuan-Yu Huang , Hsien-Pin Hu , Yushun Lin , Heh-Chang Huang , Hsing-Kuo Hsia , Chih-Chieh Hung , Ying-Ching Shih , Chin-Fu Kao , Wen-Hsin Wei , Li-Chung Kuo , Chi-Hsi Wu , Chen-Hua Yu
IPC: H01L25/00 , H01L21/48 , H01L23/24 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/18 , H01L23/00
Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.
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公开(公告)号:US20240385398A1
公开(公告)日:2024-11-21
申请号:US18787083
申请日:2024-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Hsing-Kuo Hsia , Sung-Hui Huang , Kuan-Yu Huang , Kuo-Chiang Ting , Chi-Hsi Wu , Shang-Yun Hou
Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.
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公开(公告)号:US20230350142A1
公开(公告)日:2023-11-02
申请号:US18347188
申请日:2023-07-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Hsing-Kuo Hsia , Sung-Hui Huang , Kuan-Yu Huang , Kuo-Chiang Ting , Shang-Yun Hou , Chi-Hsi Wu
CPC classification number: G02B6/4255 , H01L24/16 , H01L24/81 , G02B6/4246 , G02B6/4243 , H01L2224/81815 , H01L2224/16148 , H01L23/481
Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.
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公开(公告)号:US20220013495A1
公开(公告)日:2022-01-13
申请号:US16924203
申请日:2020-07-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Sung-Hui Huang , Shang-Yun Hou , Kuan-Yu Huang
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/48 , H01L21/56
Abstract: A package includes a first die, a second die, a semiconductor frame, and a reinforcement structure. The first die has a first surface and a second surface opposite to the first surface. The first die includes grooves on the first surface. The second die and the semiconductor frame are disposed side by side over the first surface of the first die. The semiconductor frame has at least one notch exposing the grooves of the first die. The reinforcement structure is disposed on the second surface of the first die. The reinforcement structure includes a first portion aligned with the grooves.
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公开(公告)号:US20210384154A1
公开(公告)日:2021-12-09
申请号:US17409007
申请日:2021-08-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Li-Chung Kuo , Sung-Hui Huang , Shang-Yun Hou , Tsung-Yu Chen , Chien-Yuan Huang
IPC: H01L23/00 , H01L25/065 , H01L23/32
Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.
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公开(公告)号:US12015023B2
公开(公告)日:2024-06-18
申请号:US17355433
申请日:2021-06-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Yun Hou , Sung-Hui Huang , Kuan-Yu Huang , Hsien-Pin Hu , Yushun Lin , Heh-Chang Huang , Hsing-Kuo Hsia , Chih-Chieh Hung , Ying-Ching Shih , Chin-Fu Kao , Wen-Hsin Wei , Li-Chung Kuo , Chi-Hsi Wu , Chen-Hua Yu
IPC: H01L25/00 , H01L21/48 , H01L23/24 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/18 , H01L23/00
CPC classification number: H01L25/50 , H01L21/4803 , H01L21/4853 , H01L23/24 , H01L23/3128 , H01L23/49827 , H01L25/0652 , H01L25/0655 , H01L25/18 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L24/97 , H01L2224/0401 , H01L2224/1144 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/16145 , H01L2224/16227 , H01L2224/16235 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81191 , H01L2224/81815 , H01L2224/92125 , H01L2224/92225 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/14 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/1461 , H01L2924/15311 , H01L2924/18161 , H01L2224/97 , H01L2224/83 , H01L2224/97 , H01L2224/81
Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.
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公开(公告)号:US11990443B2
公开(公告)日:2024-05-21
申请号:US17226643
申请日:2021-04-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou , Shu Chia Hsu , Yu-Yun Huang , Wen-Yao Chang , Yu-Jen Cheng
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L25/00 , H01L25/065
CPC classification number: H01L24/17 , H01L21/4853 , H01L21/486 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/49827 , H01L23/49838 , H01L23/562 , H01L24/08 , H01L24/16 , H01L24/80 , H01L25/0655 , H01L25/50 , H01L2221/68331 , H01L2224/08225 , H01L2224/16227 , H01L2224/17517 , H01L2224/80895 , H01L2224/80896 , H01L2924/3511
Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
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公开(公告)号:US20240162166A1
公开(公告)日:2024-05-16
申请号:US18422550
申请日:2024-01-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Sung-Hui Huang , Da-Cyuan Yu , Kuan-Yu Huang , Pai Yuan Li , Hsiang-Fan Lee
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/367 , H01L23/373 , H01L23/498 , H01L25/00 , H01L25/065 , H01L25/18
CPC classification number: H01L23/562 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/4882 , H01L21/563 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L23/3135 , H01L23/3675 , H01L23/3733 , H01L23/3736 , H01L23/3737 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L24/32 , H01L24/83 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L23/367 , H01L24/16 , H01L24/73 , H01L24/97 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16227 , H01L2224/26175 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83385 , H01L2224/83951 , H01L2224/92225 , H01L2924/00014 , H01L2924/10158 , H01L2924/15174 , H01L2924/15311 , H01L2924/16152 , H01L2924/165 , H01L2924/181 , H01L2924/18161 , H01L2924/35121
Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.
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公开(公告)号:US11699674B2
公开(公告)日:2023-07-11
申请号:US17409007
申请日:2021-08-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Li-Chung Kuo , Sung-Hui Huang , Shang-Yun Hou , Tsung-Yu Chen , Chien-Yuan Huang
IPC: H01L23/00 , H01L25/065 , H01L23/32 , H01L21/60
CPC classification number: H01L24/27 , H01L23/32 , H01L24/94 , H01L24/95 , H01L25/0657 , H01L2021/60097
Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.
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公开(公告)号:US20220013492A1
公开(公告)日:2022-01-13
申请号:US16924147
申请日:2020-07-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Chih-Wei Wu , Sung-Hui Huang , Shang-Yun Hou , Ying-Ching Shih , Cheng-Chieh Li
IPC: H01L23/00
Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.
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