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公开(公告)号：US07342307B2
公开(公告)日：2008-03-11
申请号：US11649253
申请日：2007-01-04
IPC分类号： H01L23/34 , H01L23/495 , H01L29/80 , H01L31/0328
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。
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公开(公告)号：US07173333B2
公开(公告)日：2007-02-06
申请号：US10972410
申请日：2004-10-26
IPC分类号： H01L23/34 , H01L23/495 , H01L29/80 , H01L31/0328
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。
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公开(公告)号：US20050121777A1
公开(公告)日：2005-06-09
申请号：US10972410
申请日：2004-10-26
IPC分类号： H01L25/07 , H01L23/495 , H01L25/18 , H01L23/34
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。
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公开(公告)号：US20100289127A1
公开(公告)日：2010-11-18
申请号：US12776376
申请日：2010-05-08
申请人： Takamitsu Kanazawa , Toshiyuki Hata
发明人： Takamitsu Kanazawa , Toshiyuki Hata
IPC分类号： H01L23/495
CPC分类号： H01L23/49562 , H01L21/4842 , H01L23/4006 , H01L23/49503 , H01L23/4952 , H01L23/49524 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/0603 , H01L2224/27013 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/37147 , H01L2224/40137 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48724 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/4903 , H01L2224/49051 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85375 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/2076 , H01L2924/30107 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2224/05552 , H01L2924/00015
摘要： A semiconductor device in which the wiring resistance and parasitic inductance of a semiconductor package configuring a power semiconductor module is reduced. In the semiconductor device, a semiconductor chip with an IGBT formed therein and a diode chip are mounted over the upper surface of a die pad. An emitter pad of the semiconductor chip and an anode pad of the diode chip are coupled with a lead by an Al wire. One end of the lead is located in a higher position than the upper surface of the die pad in order to shorten the length of the Al wire for coupling the emitter pad and the lead.
摘要翻译： 其中减少了构成功率半导体模块的半导体封装的布线电阻和寄生电感的半导体器件。 在半导体器件中，其上形成有IGBT的半导体芯片和二极管芯片安装在管芯焊盘的上表面上。 半导体芯片的发射极焊盘和二极管芯片的阳极焊盘通过Al线与引线耦合。 引线的一端位于比管芯焊盘的上表面更高的位置，以缩短用于耦合发射极焊盘和引线的Al线的长度。
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公开(公告)号：US20070108600A1
公开(公告)日：2007-05-17
申请号：US11649253
申请日：2007-01-04
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
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公开(公告)号：US08222651B2
公开(公告)日：2012-07-17
申请号：US12776376
申请日：2010-05-08
申请人： Takamitsu Kanazawa , Toshiyuki Hata
发明人： Takamitsu Kanazawa , Toshiyuki Hata
IPC分类号： H01L33/00
CPC分类号： H01L23/49562 , H01L21/4842 , H01L23/4006 , H01L23/49503 , H01L23/4952 , H01L23/49524 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/0603 , H01L2224/27013 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/37147 , H01L2224/40137 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48724 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/4903 , H01L2224/49051 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85375 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/2076 , H01L2924/30107 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2224/05552 , H01L2924/00015
摘要： A semiconductor device in which the wiring resistance and parasitic inductance of a semiconductor package configuring a power semiconductor module is reduced. In the semiconductor device, a semiconductor chip with an IGBT formed therein and a diode chip are mounted over the upper surface of a die pad. An emitter pad of the semiconductor chip and an anode pad of the diode chip are coupled with a lead by an Al wire. One end of the lead is located in a higher position than the upper surface of the die pad in order to shorten the length of the Al wire for coupling the emitter pad and the lead.
摘要翻译： 其中减少了构成功率半导体模块的半导体封装的布线电阻和寄生电感的半导体器件。 在半导体器件中，其上形成有IGBT的半导体芯片和二极管芯片安装在管芯焊盘的上表面上。 半导体芯片的发射极焊盘和二极管芯片的阳极焊盘通过Al线与引线耦合。 引线的一端位于比管芯焊盘的上表面更高的位置，以缩短用于耦合发射极焊盘和引线的Al线的长度。
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公开(公告)号：US20080211010A1
公开(公告)日：2008-09-04
申请号：US12068472
申请日：2008-02-07
IPC分类号： H01L29/78
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
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公开(公告)号：US08629467B2
公开(公告)日：2014-01-14
申请号：US13533947
申请日：2012-06-26
申请人： Takamitsu Kanazawa , Toshiyuki Hata
发明人： Takamitsu Kanazawa , Toshiyuki Hata
IPC分类号： H01L33/00
CPC分类号： H01L23/49562 , H01L21/4842 , H01L23/4006 , H01L23/49503 , H01L23/4952 , H01L23/49524 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/0603 , H01L2224/27013 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/37147 , H01L2224/40137 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48724 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/4903 , H01L2224/49051 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85375 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/2076 , H01L2924/30107 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2224/05552 , H01L2924/00015
摘要： A semiconductor device in which the wiring resistance and parasitic inductance of a semiconductor package configuring a power semiconductor module is reduced. In the semiconductor device, a semiconductor chip with an IGBT formed therein and a diode chip are mounted over the upper surface of a die pad. An emitter pad of the semiconductor chip and an anode pad of the diode chip are coupled with a lead by an Al wire. One end of the lead is located in a higher position than the upper surface of the die pad in order to shorten the length of the Al wire for coupling the emitter pad and the lead.
摘要翻译： 其中减少了构成功率半导体模块的半导体封装的布线电阻和寄生电感的半导体器件。 在半导体器件中，其上形成有IGBT的半导体芯片和二极管芯片安装在管芯焊盘的上表面上。 半导体芯片的发射极焊盘和二极管芯片的阳极焊盘通过Al线与引线耦合。 引线的一端位于比管芯焊盘的上表面更高的位置，以缩短用于耦合发射极焊盘和引线的Al线的长度。
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公开(公告)号：US20140231829A1
公开(公告)日：2014-08-21
申请号：US14348048
申请日：2011-09-30
申请人： Takamitsu Kanazawa , Satoru Akiyama
发明人： Takamitsu Kanazawa , Satoru Akiyama
CPC分类号： H01L25/072 , H01L21/8213 , H01L23/3107 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/5384 , H01L23/5386 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0207 , H01L27/0617 , H01L27/088 , H01L29/1066 , H01L29/1608 , H01L29/78 , H01L29/7802 , H01L29/808 , H01L29/8083 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/29139 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/3701 , H01L2224/3702 , H01L2224/371 , H01L2224/37147 , H01L2224/40105 , H01L2224/40145 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/014 , H01L2924/00012 , H01L2224/48227 , H01L2924/00 , H01L2224/84
摘要： Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a semiconductor chip CHP1 is disposed so as to be closer to a source lead SL than to other leads (a drain lead DL and a gate lead GL). As a result, according to the present invention, a distance between the gate pad GPj and the source lead SL can be shortened, and thus a length of the wire Wgj for connecting the gate pad GPj and the source lead SL together can be shortened. Thus, according to the present invention, a parasitic inductance that is present in the wire Wgj can be sufficiently reduced.
摘要翻译： 提供了能够提高半导体器件的可靠性的技术。 在本发明中，形成在半导体芯片CHP1的前表面上的栅极焊盘GPj被布置成比其他引线（漏极引线DL和栅极引线GL）更靠近源极引线SL。 结果，根据本发明，可以缩短栅极焊盘GPj和源极引线SL之间的距离，从而可以缩短用于将栅极焊盘GPj和源极引线SL连接在一起的焊丝Wgj的长度。 因此，根据本发明，可以充分地减小存在于导线Wgj中的寄生电感。
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公开(公告)号：US20090058500A1
公开(公告)日：2009-03-05
申请号：US11965808
申请日：2007-12-28
IPC分类号： H03K17/56
CPC分类号： H01L24/49 , H01L23/49562 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L25/18 , H01L2224/0603 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01019 , H01L2924/01028 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit.
摘要翻译： 具有连接到双向开关电路的第一节点的接合电极的第一半导体元件安装在第一金属基板上作为散热板，并且第二半导体元件具有连接到第二金属基板的接合电极 双向开关电路的节点安装在第二金属基板上作为散热板。 第一半导体元件的接合电极具有与第一金属基板相同的电位，第二半导体元件的接合电极具有与第二金属基板相同的电位。 此外，各个半导体元件的各个金属基板和非接合电极分别由金属细线连接，从而构成双向开关电路。
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