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    Synthetically modifiable ion channels
    1.
    发明授权
    Synthetically modifiable ion channels 有权

    公开(公告)号：US11976078B2

    公开(公告)日：2024-05-07

    申请号：US16081265

    申请日：2017-02-28

    申请人： UNIVERSITY OF WYOMING

    发明人： Bruce Alan Parkinson ,  John Hoberg ,  Jordan Brophy

    IPC分类号： C07D487/22 ,  B82B3/00 ,  C01B32/182

    CPC分类号： C07D487/22 ,  B82B3/0014 ,  B82B3/0042

    摘要： A new class of ordered functional nanoporous material (OFNMs) with a unique combination of electronic conductivity, gas transport ability, and ion transport properties are provided. The OFNM provided is highly ordered and contains nanometer scale pores lined with nitrogen atoms. The pores have dimensions of from 1.2 nm to 82 nm of longest linear extent across the pore. The functionality within the pore is controlled through selection of groups that extend into the pore. The degree of conjugated aromaticity is readily controlled to adjust the electrical conductivity properties of the resulting structure. By adjusting the groups external to the pore, three-dimensional structures are formed that are organic mimics of zeolites, metal organic frameworks (MOF), or perovskites.

    ANTI-REFLECTION WITH INTERCONNECTED STRUCTURES
    2.
    发明公开
    ANTI-REFLECTION WITH INTERCONNECTED STRUCTURES 审中-公开

    公开(公告)号：US20230341761A1

    公开(公告)日：2023-10-26

    申请号：US18033721

    申请日：2021-10-26

    申请人： Edgehog Advanced Technologies Inc.

    发明人： Chia-hung Calvin Cheng ,  Fabien Paul Jacques Dauzou ,  Siamak Kashi ,  Nasim Sahraei Khanghah

    IPC分类号： G03F1/46 ,  G03F1/80 ,  B82Y20/00 ,  B82B3/00

    CPC分类号： G03F1/46 ,  G03F1/80 ,  B82Y20/00 ,  B82B3/0014 ,  B82B3/0057 ,  B82B3/0066

    摘要： An anti-reflective article includes a substrate including a surface and a bulk, and an arrangement of anti-reflective nanostructures along the surface of the substrate, each anti-reflective nanostructure of the arrangement of anti-reflective nanostructures being supported by the bulk of the substrate, each anti-reflective nanostructure of the arrangement of anti-reflective nanostructure tapering from the bulk of the substrate to define a respective peak. At least some of the anti-reflective nanostructures of the arrangement of anti-reflective nanostructures are linked with an adjacent anti-reflective nanostructure of the arrangement of anti-reflective nanostructures via a respective interconnection. The respective interconnections are in addition to the bulk of the substrate supporting the anti-reflective nanostructures. The respective interconnections are disposed at or above a midpoint between the peaks of the anti-reflective nanostructures and the bulk of the substrate.

    Method for making guiding lines with oxidized sidewalls for use in directed self-assembly (DSA) of block copolymers
    7.
    发明授权
    Method for making guiding lines with oxidized sidewalls for use in directed self-assembly (DSA) of block copolymers 有权
    用于制造具有氧化侧壁的引导线用于嵌段共聚物的定向自组装（DSA）的方法

    公开(公告)号：US09431219B1

    公开(公告)日：2016-08-30

    申请号：US14704082

    申请日：2015-05-05

    申请人： HGST Netherlands B.V.

    发明人： Julia Cushen ,  Ricardo Ruiz ,  Lei Wan

    IPC分类号： H01L21/3065 ,  H01L21/308 ,  C03C15/00 ,  B82B3/00 ,  B82Y40/00 ,  H01J37/32 ,  B05D3/14 ,  H01L21/027 ,  B81C1/00 ,  G11B5/855 ,  G11B5/84 ,  H01L21/311

    CPC分类号： G11B5/855 ,  B81C1/00396 ,  B82B3/0014 ,  B82Y40/00 ,  C03C15/00 ,  G03F7/0002 ,  G11B5/8404 ,  H01L21/0271 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31138

    摘要： A method that uses both electron beam (e-beam) lithography and directed self-assembly (DSA) of block copolymers (BCPs) makes guiding lines with oxidized sidewalls for use in subsequent DSA of BCPs. A series of films is deposited on a substrate including a first cross-linked polymer mat layer, a layer of resist, an etch stop layer resistant to oxygen reactive-ion-etching, a second cross-linked polymer mat layer, and an e-beam resist. After patterning and etching the second mat layer, a BCP self-assembles onto the patterned second mat layer and one of the BCP components is removed. Then the second mat layer is etched, using the remaining BCP component as an etch mask. Additional etching steps then create guiding lines of the first mat layer with oxidized sidewalls. The resulting guiding lines have better quality and lower roughness than guiding lines made with just e-beam lithography.

    摘要翻译： 使用电子束（电子束）光刻和嵌段共聚物（BCP）的定向自组装（DSA）的方法使得具有氧化侧壁的引导线用于BCP的后续DSA。 一系列薄膜沉积在包括第一交联聚合物垫层，抗蚀剂层，耐氧反应离子蚀刻抗蚀剂的蚀刻停止层，第二交联聚合物垫层和电镀层的基材上， 光束抗蚀剂 在图案化和蚀刻第二垫层之后，BCP自组装到图案化的第二垫层上，并且去除一个BCP部件。 然后，使用剩余的BCP部件作为蚀刻掩模蚀刻第二垫层。 另外的蚀刻步骤然后产生具有氧化侧壁的第一垫层的引导线。 所得到的引导线具有比仅用电子束光刻制成的引导线更好的质量和更低的粗糙度。