公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

Applicant: Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

Inventor： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC: H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Abstract translation: 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US08389376B2

公开(公告)日：2013-03-05

申请号：US12714865

申请日：2010-03-01

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/76

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure including depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施方案中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US20120205046A1

公开(公告)日：2012-08-16

申请号：US13456308

申请日：2012-04-26

Applicant: Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

Inventor： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: H01L21/3065

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/503 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32541

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract translation: 提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。 在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。 在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。 此外，一个或多个电极可以嵌入在腔室侧壁中。

公开(公告)号：US07964442B2

公开(公告)日：2011-06-21

申请号：US11869416

申请日：2007-10-09

Applicant: Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L51/40

CPC classification number: H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

Abstract: The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

Abstract translation: 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

公开(公告)号：US07923386B2

公开(公告)日：2011-04-12

申请号：US12560941

申请日：2009-09-16

Applicant: Mihaela Balseanu ,  Mei-yee Shek ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Mei-yee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC: H01L21/31

CPC classification number: H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

Abstract: A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

Abstract translation: 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。

公开(公告)号：US07867578B2

公开(公告)日：2011-01-11

申请号：US11427324

申请日：2006-06-28

Applicant: Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: H05H1/24

CPC classification number: H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Abstract translation: 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07790635B2

公开(公告)日：2010-09-07

申请号：US11610991

申请日：2006-12-14

Applicant: Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/31

CPC classification number: H01L21/02167 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

Abstract: A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.

Abstract translation: 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。

公开(公告)号：US20100151671A1

公开(公告)日：2010-06-17

申请号：US12714865

申请日：2010-03-01

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/768

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施例中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US07704816B2

公开(公告)日：2010-04-27

申请号：US12171783

申请日：2008-07-11

Applicant: Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/336

CPC classification number: C23C16/28 ,  C23C16/56 ,  H01L21/314 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

Abstract: Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about −10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.

Abstract translation: 提供形成含硼膜的方法。 所述方法包括将含硼前体引入室中，并通过热分解或等离子体处理将包含硼 - 硼键的网络沉积在衬底上。 可以对网络进行后处理以从网络中除去氢，并增加所得含硼膜的应力。 含硼膜的应力在约-10GPa和10GPa之间，可用作硼源层或应变诱导层。

公开(公告)号：US07700486B2

公开(公告)日：2010-04-20

申请号：US11424723

申请日：2006-06-16

Applicant: Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC: H01L21/44 ,  G01F7/00

CPC classification number: H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract translation: 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。