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    METHOD OF ACHIEVING ATOMICALLY SMOOTH SIDEWALLS IN DEEP TRENCHES, AND HIGH ASPECT RATIO SILICON STRUCTURE CONTAINING ATOMICALLY SMOOTH SIDEWALLS
    92.
    发明申请
    METHOD OF ACHIEVING ATOMICALLY SMOOTH SIDEWALLS IN DEEP TRENCHES, AND HIGH ASPECT RATIO SILICON STRUCTURE CONTAINING ATOMICALLY SMOOTH SIDEWALLS 审中-公开
    在深层次平台中实现原子光滑的方法，以及包含原子光滑平台的高比例硅结构

    公开(公告)号：US20090085169A1

    公开(公告)日：2009-04-02

    申请号：US11864899

    申请日：2007-09-28

    Applicant: Willy Rachmady ,  Brian S. Doyle ,  Jack Kavalieros ,  Rajwinder Singh

    Inventor： Willy Rachmady ,  Brian S. Doyle ,  Jack Kavalieros ,  Rajwinder Singh

    IPC: H01L21/461 ,  H01L29/06

    CPC classification number: H01L29/66181 ,  H01L21/3065 ,  H01L29/66795

    Abstract: A high aspect ratio silicon structure comprises a silicon substrate (110) having a surface (111), an electrically insulating layer (120) over portions of the silicon substrate, a hardmask (130) over the electrically insulating layer, and a deep silicon trench (140) formed in the substrate. The deep silicon trench comprises a floor (141) and sidewalls (142) extending away from the floor, and the sidewalls are atomically smooth. In an embodiment, the atomically smooth sidewalls are achieved by providing a substrate having the deep silicon trench formed therein, forming a layer of water over the substrate and within the deep silicon trench, and exposing the substrate to a hydrogen fluoride vapor and to an ozone gas.

    Abstract translation: 高纵横比硅结构包括具有表面（111）的硅衬底（110），硅衬底的部分上的电绝缘层（120），电绝缘层上的硬掩模（130）和深硅沟槽 （140）。 深硅沟槽包括从地板延伸的地板（141）和侧壁（142），并且侧壁是原子平滑的。 在一个实施例中，通过提供其中形成有深硅沟槽的衬底，在衬底上并在深硅沟槽内形成一层水，并将衬底暴露于氟化氢蒸气和臭氧 加油站。

    METHOD TO INTRODUCE UNIAXIAL STRAIN IN MULTIGATE NANOSCALE TRANSISTORS BY SELF ALIGNED SI TO SIGE CONVERSION PROCESSES AND STRUCTURES FORMED THEREBY
    93.
    发明申请
    METHOD TO INTRODUCE UNIAXIAL STRAIN IN MULTIGATE NANOSCALE TRANSISTORS BY SELF ALIGNED SI TO SIGE CONVERSION PROCESSES AND STRUCTURES FORMED THEREBY 有权
    通过自对准SI引入多元纳米晶体管中的单轴应变的方法来标识形成的转换过程和结构

    公开(公告)号：US20090085062A1

    公开(公告)日：2009-04-02

    申请号：US11864726

    申请日：2007-09-28

    Applicant: Been-Yih Jin ,  Brian Doyle ,  Jack Kavalieros ,  Suman Datta

    Inventor： Been-Yih Jin ,  Brian Doyle ,  Jack Kavalieros ,  Suman Datta

    IPC: H01L29/778 ,  H01L21/336

    CPC classification number: H01L29/7851 ,  H01L29/66795 ,  H01L29/7848

    Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods may include providing a gate electrode comprising a top surface and first and second laterally opposite sidewalls, wherein a hard mask is disposed on the top surface, a source drain region disposed on opposite sides of the gate electrode, and a spacer disposed on the first and second laterally opposed sidewalls of the gate electrode, forming a silicon germanium layer on exposed portions of the top surface and the first and second laterally opposite sidewalls of the source drain region and then oxidizing a portion of the silicon germanium layer, wherein a germanium portion of the silicon germanium layer is forced down into the source drain region to convert a silicon portion of the source drain region into a silicon germanium portion of the source drain region.

    Abstract translation: 描述形成微电子结构的方法。 这些方法的实施例可以包括提供包括顶表面和第一和第二横向相对的侧壁的栅电极，其中硬掩模设置在顶表面上，源极漏极区域设置在栅电极的相对侧上， 在栅电极的第一和第二横向相对的侧壁上，在源漏区的顶表面和第一和第二横向相对的侧壁的暴露部分上形成硅锗层，然后氧化硅锗层的一部分，其中 硅锗层的锗部分被迫下降到源极漏极区域中，以将源极区域的硅部分转换成源极漏极区域的硅锗部分。

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