中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

143 records (took 0.047 seconds)

    Content Adaptive Light Field Compression
    99.
    发明申请
    Content Adaptive Light Field Compression 审中-公开

    公开(公告)号：US20170142427A1

    公开(公告)日：2017-05-18

    申请号：US15352226

    申请日：2016-11-15

    Applicant: Ostendo Technologies, Inc.

    Inventor： Danillo Bracco Graziosi ,  Zahir Y. Alpaslan ,  Dale A. McNeill ,  Hussein S. El-Ghoroury

    IPC: H04N19/186 ,  H04N19/103 ,  G06T9/20

    Abstract: A compression method for high-resolution light field display is disclosed for applications in which computer memory constraints and latency are critical. The disclosed compression algorithm takes advantage of the 3D structure of a light field to compress the raw light field information with a fixed compression ratio and simple decoding instructions. The compressed high-resolution light field achieves a reduced bandwidth with acceptable quality, and is packed in a way that can be transmitted using common interfaces. In a preferred embodiment, the compression algorithm is used as a post-processing stage after light field information acquisition or after rendering. In a further preferred embodiment, the compression algorithm is incorporated into the acquisition or rendering procedure to reduce memory and rendering processing. These and further embodiments generate a compressed light field with all information required for direct display.

    III-Nitride Semiconductor Light Emitting Device Having Amber-to-Red Light Emission (>600 nm) and a Method for Making Same
    100.
    发明申请
    III-Nitride Semiconductor Light Emitting Device Having Amber-to-Red Light Emission (>600 nm) and a Method for Making Same 审中-公开

    公开(公告)号：US20170104128A1

    公开(公告)日：2017-04-13

    申请号：US15287384

    申请日：2016-10-06

    Applicant: Ostendo Technologies, Inc.

    Inventor： Yea-Chuan Milton Yeh ,  Hussein S. El-Ghoroury ,  Xing Li ,  Jyh-Chia Chen ,  Chih-Li Chuang

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32

    Abstract: A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.

Patent Agency Ranking