公开(公告)号：US12084764B2

公开(公告)日：2024-09-10

申请号：US17351096

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly ,  David Michael Thompson ,  Susmit Singha Roy ,  Regina Freed

IPC: C23C16/455 ,  G03F7/16

CPC classification number: C23C16/45538 ,  G03F7/167 ,  C23C16/45527 ,  C23C16/45529

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：US12020982B2

公开(公告)日：2024-06-25

申请号：US17587525

申请日：2022-01-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C. H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76864 ,  H01L21/76898 ,  H01L23/481

Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US11972940B2

公开(公告)日：2024-04-30

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20230360924A1

公开(公告)日：2023-11-09

申请号：US17737311

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Rui Cheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32844 ,  H01J37/32522 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

公开(公告)号：US20230360903A1

公开(公告)日：2023-11-09

申请号：US17737340

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02

CPC classification number: H01L21/02123 ,  H01L21/02211 ,  H01L21/02345 ,  H01L21/0234

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.

公开(公告)号：US11705335B2

公开(公告)日：2023-07-18

申请号：US17724994

申请日：2022-04-20

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/2257 ,  H01L21/02043 ,  H01L21/02164 ,  H01L21/30 ,  H01L21/67167

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US11594415B2

公开(公告)日：2023-02-28

申请号：US16679698

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US20230056280A1

公开(公告)日：2023-02-23

申请号：US17974859

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11515163B2

公开(公告)日：2022-11-29

申请号：US17142626

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11414751B2

公开(公告)日：2022-08-16

申请号：US16643967

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.