Image sensor including spatially different active and dark pixel interconnect patterns
    91.
    发明授权
    Image sensor including spatially different active and dark pixel interconnect patterns 有权
    图像传感器包括空间不同的有源和暗像素互连图案

    公开(公告)号:US07825416B2

    公开(公告)日:2010-11-02

    申请号:US12423055

    申请日:2009-04-14

    Abstract: An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.

    Abstract translation: 互连布局,包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层,因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。

    RANDOM PERSONALIZATION OF CHIPS DURING FABRICATION
    93.
    发明申请
    RANDOM PERSONALIZATION OF CHIPS DURING FABRICATION 有权
    制造期间随机个性化

    公开(公告)号:US20100164013A1

    公开(公告)日:2010-07-01

    申请号:US12344725

    申请日:2008-12-29

    Abstract: Disclosed are embodiments of a method for randomly personalizing chips during fabrication, a personalized chip structure and a design structure for such a personalized chip structure. The embodiments use electronic device design and manufacturing processes to randomly or pseudo-randomly create a specific variation in one or more instances of a particular electronic device formed on each chip. The device design and manufacturing processes are tuned so that the specific variation occurs with some predetermined probability, resulting in a desired hardware distribution and personalizing each chip. The resulting personalized chips can be used for modal distribution of chips. For example, chips can be personalized to allow sorting when a single chip design can be used to support multiple applications. The resulting personalized chips can also be used for random number generation for creating unique on-chip identifiers, private keys, etc.

    Abstract translation: 公开了用于在制造期间随机个性化芯片的方法的实施例,个性化芯片结构和用于这种个性化芯片结构的设计结构。 实施例使用电子设备设计和制造过程来随机地或伪随机地在每个芯片上形成的特定电子设备的一个或多个实例中创建特定变化。 调整设备设计和制造过程,使得特定变化以某种预定概率发生,从而产生期望的硬件分布和个性化每个芯片。 所得到的个性化芯片可用于芯片的模态分配。 例如,当单芯片设计可用于支持多种应用时,芯片可以被个性化以允许排序。 所产生的个性化芯片也可以用于随机数生成,用于创建唯一的片上标识符,私钥等。

    IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS
    94.
    发明申请
    IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS 有权
    图像传感器包括空间不同的主动和深色像素互连图案

    公开(公告)号:US20090224349A1

    公开(公告)日:2009-09-10

    申请号:US12423055

    申请日:2009-04-14

    Abstract: An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.

    Abstract translation: 互连布局,包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层,因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。

    Image sensor including spatially different active and dark pixel interconnect patterns
    95.
    发明授权
    Image sensor including spatially different active and dark pixel interconnect patterns 有权
    图像传感器包括空间不同的有源和暗像素互连图案

    公开(公告)号:US07537951B2

    公开(公告)日:2009-05-26

    申请号:US11560019

    申请日:2006-11-15

    Abstract: An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.

    Abstract translation: 互连布局,包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层,因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。

    Designing scan chains with specific parameter sensitivities to identify process defects
    97.
    发明授权
    Designing scan chains with specific parameter sensitivities to identify process defects 失效
    设计具有特定参数灵敏度的扫描链,以识别过程缺陷

    公开(公告)号:US07194706B2

    公开(公告)日:2007-03-20

    申请号:US10710642

    申请日:2004-07-27

    Abstract: A method is disclosed for designing scan chains in an integrated circuit chip with specific parameter sensitivities to identify fabrication process defects causing test fails and chip yield loss. The composition of scan paths in the integrated circuit chip is biased to allow them to also function as on-product process monitors. The method adds grouping constraints that bias scan chains to have common latch cell usage where possible, and also biases cell routing to constrain scan chain routing to given restricted metal layers for interconnects. The method assembles a list of latch design parameters which are sensitive to process variation or integrity, and formulates a plan for scan chain design which determines the number and the length of scan chains. A model is formulated of scan chain design based upon current state of yield and process integrity, wherein certain latch designs having dominant sensitivities are chosen for specific ones of the scan chains on the chip. The model is provided as input parameters to a global placement and wiring program used to lay out the scan chains. Test data on the chip is then analyzed to determine and isolate systematic yield problems denoted by attributes of a statistically significant failing population of a specific type of scan chain.

    Abstract translation: 公开了一种用于设计具有特定参数灵敏度的集成电路芯片中的扫描链的方法,以识别导致测试失败和芯片产量损失的制造工艺缺陷。 集成电路芯片中的扫描路径的组成被偏置以允许它们也用作产品过程监视器。 该方法增加了分组约束,使得扫描链偏置以在可能的情况下具有共同的锁存单元使用,并且还偏置小区路由以将扫描链路由限制到用于互连的给定受限金属层。 该方法组合了对过程变化或完整性敏感的锁存器设计参数列表,并且制定了扫描链设计的计划,该计划确定了扫描链的数量和长度。 基于产量和过程完整性的当前状态来制定扫描链设计的模型,其中为芯片上的特定扫描链选择具有主要灵敏度的某些锁存器设计。 该模型作为输入参数提供给用于布置扫描链的全局放置和布线程序。 然后对芯片上的测试数据进行分析,以确定和分离由特定类型的扫描链的统计学显着失败群体的属性表示的系统产量问题。

Patent Agency Ranking