公开(公告)号：US11715927B2

公开(公告)日：2023-08-01

申请号：US17552261

申请日：2021-12-15

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343

CPC classification number: H01S5/0217 ,  H01S5/0203 ,  H01S5/34333 ,  H01S2304/12

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US11705689B2

公开(公告)日：2023-07-18

申请号：US17377835

申请日：2021-07-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/343 ,  H01S5/0234

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0234 ,  H01S5/3202 ,  H01S5/320275 ,  H01S5/34333 ,  H01S5/34346

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US11677468B2

公开(公告)日：2023-06-13

申请号：US17667303

申请日：2022-02-08

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  G02B27/09 ,  H04B10/50 ,  H01S5/40 ,  H01S5/02251 ,  H01S5/00 ,  H01S5/22 ,  H04B10/572 ,  H01L33/00 ,  H04B10/564 ,  H04B10/524 ,  H04B10/60 ,  H01S5/02212 ,  H01S5/02 ,  H01S5/10 ,  H01S5/32 ,  H01S5/02216 ,  H01S5/20 ,  H01S5/026 ,  H01S5/042 ,  H04B10/114 ,  H01S5/02326 ,  H01S5/02345

CPC classification number: H04B10/116 ,  G02B27/0916 ,  H01S5/005 ,  H01S5/0087 ,  H01S5/02251 ,  H01S5/34333 ,  H01S5/4012 ,  H04B10/502 ,  H01L33/0045 ,  H01S5/0071 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/026 ,  H01S5/02212 ,  H01S5/02216 ,  H01S5/02326 ,  H01S5/02345 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/4093 ,  H04B10/114 ,  H04B10/1141 ,  H04B10/5057 ,  H04B10/524 ,  H04B10/564 ,  H04B10/572 ,  H04B10/60

Abstract: A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

公开(公告)号：US20230176289A1

公开(公告)日：2023-06-08

申请号：US18078575

申请日：2022-12-09

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: G02B6/27 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21K9/60 ,  F21V9/32 ,  F21V9/30 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02251 ,  H01S5/02255 ,  H01S5/02326 ,  H01S5/02315 ,  F21V29/71 ,  F21V29/83 ,  F21V23/06 ,  F21V8/00 ,  H01S5/02224 ,  H01S5/323 ,  F21K9/62 ,  G02B6/26

CPC classification number: G02B6/27 ,  F21K9/64 ,  H01S5/005 ,  H01S5/02476 ,  H01S5/2201 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4031 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4249 ,  F21K9/60 ,  F21V9/32 ,  F21V9/30 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02251 ,  H01S5/02255 ,  H01S5/02326 ,  H01S5/02315 ,  F21V29/713 ,  F21V29/83 ,  F21V23/06 ,  G02B6/0005 ,  H01S5/02469 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02224 ,  H01S5/32341 ,  H01S5/4025 ,  F21K9/62 ,  G02B6/26 ,  H01S5/3235 ,  F21Y2115/30

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US11569637B2

公开(公告)日：2023-01-31

申请号：US17143912

申请日：2021-01-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/40 ,  H01S5/02325 ,  H01S5/02345

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US11543590B2

公开(公告)日：2023-01-03

申请号：US16796320

申请日：2020-02-20

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: H01S5/00 ,  G02B6/27 ,  F21K9/64 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21K9/60 ,  F21V9/32 ,  F21V9/30 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02251 ,  H01S5/02255 ,  H01S5/02326 ,  F21V29/71 ,  F21V29/83 ,  F21V23/06 ,  F21V8/00 ,  H01S5/02224 ,  H01S5/323 ,  F21K9/62 ,  G02B6/26 ,  F21Y115/30 ,  F21Y115/10 ,  F21Y101/00 ,  H01S5/028 ,  H01S5/02208 ,  H01S5/042 ,  H01S5/02345

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US20220320819A1

公开(公告)日：2022-10-06

申请号：US17677462

申请日：2022-02-22

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Paul Rudy ,  James W. Raring ,  Eric Goutain ,  Troy Trottier ,  Melvin McLaurin ,  James Harrison ,  Sten Heikman ,  Michael Cantore

IPC: H01S5/00 ,  F21K9/64 ,  H01S5/40 ,  F21K9/69 ,  F21K9/68 ,  F21K9/90 ,  F21V29/70 ,  H01S5/343 ,  H01S5/024 ,  H01S5/0237

Abstract: The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.

公开(公告)号：US11342727B1

公开(公告)日：2022-05-24

申请号：US16903147

申请日：2020-06-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01S5/02 ,  H01S5/00 ,  H01L33/16 ,  H01L23/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/028 ,  H01L33/50 ,  H01S5/0234

Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.

公开(公告)号：US11316321B1

公开(公告)日：2022-04-26

申请号：US16777355

申请日：2020-01-30

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Steve DenBaars ,  Troy Trottier

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/14 ,  H01S5/323 ,  H01S5/028 ,  H01S5/068

Abstract: The present invention provides a device and method for a laser based light source using a combination of laser diode or waveguide gain element excitation source based on gallium and nitrogen containing materials and wavelength conversion phosphor materials designed for inherent safety. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, light source with closed loop design features to yield the light source as an eye safe light source.

公开(公告)号：US11287527B2

公开(公告)日：2022-03-29

申请号：US17165827

申请日：2021-02-02

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/89 ,  G01S17/10 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487 ,  H01S5/02212 ,  H01S5/343 ,  H01S5/40 ,  G01S17/86 ,  G01S17/931 ,  H01S5/02251 ,  H01S5/02325 ,  H01S5/028 ,  H01S5/22 ,  H01S5/02 ,  H01S5/02255 ,  H01S5/02345 ,  H01S5/02375

Abstract: A distance detecting system for use in mobile machines comprises a gallium and nitrogen containing laser diode disposed within a light of a mobile machine. The gallium and nitrogen containing laser diode is configured to emit a first light with a first peak wavelength. A wavelength conversion member is configured to produce a white light. A first sensing light signal is based on the first peak wavelength. One or more optical elements are configured to direct at least partially the white light to illuminate one or more target objects or areas and to transmit respectively the first sensing light signal for sensing at least one remote point. A detector is configured to detect reflected signals of the first sensing light signal to determine coordinates of the at least one remote point.