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公开(公告)号：US08552434B2
公开(公告)日：2013-10-08
申请号：US13680345
申请日：2012-11-19
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
摘要翻译： 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。
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公开(公告)号：US20130257688A1
公开(公告)日：2013-10-03
申请号：US13904121
申请日：2013-05-29
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
IPC分类号： G02B27/01
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译： 本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。 根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。 驱动支撑系统的发光装置可以显示显示器的远侧。 可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。
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公开(公告)号：US08546182B2
公开(公告)日：2013-10-01
申请号：US13680349
申请日：2012-11-19
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
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公开(公告)号：US20130234132A1
公开(公告)日：2013-09-12
申请号：US13860812
申请日：2013-04-11
IPC分类号： H01L29/786
CPC分类号： H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
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公开(公告)号：US20130157400A1
公开(公告)日：2013-06-20
申请号：US13768387
申请日：2013-02-15
IPC分类号： H01L33/44
CPC分类号： H01L51/56 , C23C14/046 , C23C14/12 , C23C14/246 , C23C14/564 , H01L27/3244 , H01L33/44
摘要： The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.
摘要翻译： 本发明提供一种可以更有效地使用EL材料的成膜系统的气相沉积方法和气相沉积系统，并且形成具有高生产率的均匀性优异的EL材料。 根据本发明，在成膜室内部，将密封蒸发材料的多个容器以一定间距移动到基板上的矩形状的蒸发源保持器和蒸发材料蒸镀在基板上。 此外，蒸发源保持器的纵向方向可以在基板的一侧倾斜，同时蒸发源保持器被移动。 此外，优选的是，蒸镀源夹持器在气相沉积期间的移动方向与形成TFT的激光束的扫描方向不同。
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公开(公告)号：US12127466B2
公开(公告)日：2024-10-22
申请号：US18370616
申请日：2023-09-20
发明人： Hideaki Kuwabara , Hideto Ohnuma
IPC分类号： H10K71/00 , H01L33/36 , H10K50/80 , H10K59/10 , H10K59/121 , H10K59/122 , H10K59/124 , H10K71/16 , H10K102/00
CPC分类号： H10K71/00 , H01L33/36 , H10K50/80 , H10K59/10 , H10K59/1213 , H10K59/122 , H10K59/124 , H10K71/166 , H10K2102/311
摘要： As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
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公开(公告)号：US11960158B2
公开(公告)日：2024-04-16
申请号：US18134206
申请日：2023-04-13
发明人： Shingo Eguchi , Hideaki Kuwabara , Kazune Yokomizo
IPC分类号： G02F1/1333 , G09F9/30 , G09F9/46 , H01L29/786 , H05B33/02 , H10K50/11 , H10K59/50 , H05B33/14 , H05B33/22 , H10K102/00
CPC分类号： G02F1/133308 , G02F1/1333 , G09F9/30 , G09F9/301 , G09F9/46 , H01L29/786 , H01L29/78603 , H05B33/02 , H10K50/11 , H10K59/50 , H05B33/14 , H05B33/22 , H10K2102/311
摘要： A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side. The first substrate and part of the second resin layer are bonded to each other with the adhesive layer.
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公开(公告)号：US11837461B2
公开(公告)日：2023-12-05
申请号：US17010151
申请日：2020-09-02
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/786 , H01L27/12 , H01L29/26 , G06K19/077 , H01L21/8236 , H01L23/66 , H01L27/088 , H01L29/24 , H01L29/66 , G11C7/00 , G11C19/28 , H02M3/07
CPC分类号： H01L29/78609 , G06K19/07758 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/26 , H01L29/66969 , H01L29/7869 , H01L29/78696 , G11C7/00 , G11C19/28 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
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公开(公告)号：US11770965B2
公开(公告)日：2023-09-26
申请号：US17519051
申请日：2021-11-04
发明人： Hideaki Kuwabara , Hideto Ohnuma
IPC分类号： H01L51/56 , H01L27/32 , H01L33/36 , H01L51/52 , H10K71/00 , H10K50/80 , H10K59/10 , H10K59/122 , H10K59/124 , H10K59/121 , H10K71/16 , H10K102/00
CPC分类号： H10K71/00 , H01L33/36 , H10K50/80 , H10K59/10 , H10K59/122 , H10K59/124 , H10K59/1213 , H10K71/166 , H10K2102/311
摘要： As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
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公开(公告)号：US11728350B2
公开(公告)日：2023-08-15
申请号：US17672901
申请日：2022-02-16
IPC分类号： H01L27/00 , H01L29/00 , G02F1/1333 , H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
CPC分类号： H01L27/1225 , G02F1/1337 , G02F1/1368 , G02F1/133345 , G02F1/134309 , G02F1/136227 , G02F1/136277 , H01L27/124 , H01L27/1214 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/7869 , H01L29/78609
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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