公开(公告)号：US06936906B2

公开(公告)日：2005-08-30

申请号：US09965373

申请日：2001-09-26

申请人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： C23C14/34 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/58 ,  H01L27/095

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

摘要翻译： 本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。 在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。 例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 在另一个实施例中，种子层包括沉积在阻挡层上的铜合金晶种层和沉积在铜合金晶种层上的第二晶种层。 铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。 在另一个实施例中，种子层包括第一种子层和第二种子层。 第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。

公开(公告)号：US06309713B1

公开(公告)日：2001-10-30

申请号：US08884811

申请日：1997-06-30

申请人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

发明人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

公开(公告)号：US06294466B1

公开(公告)日：2001-09-25

申请号：US09071514

申请日：1998-05-01

申请人： Mei Chang

发明人： Mei Chang

IPC分类号： H01L2144

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45576 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/3299

摘要： A method and apparatus for depositing a titanium containing layer on a semiconductor substrate employing high density plasma processing techniques. The titanium source includes a TiCl4 gas which is flowed into a process chamber along with an inert gas source, such as argon and a flow of hydrogen gas. A plasma is present in the process chamber where the semiconductor substrate is situated. The apparatus includes a dome-shaped cover which forms part of the process chamber. The cover includes aperture centrally disposed therein and is adapted to produce a flow of TiCl4 gas that is directed substantially transverse to the semiconductor substrate, with a portion of the flow of hydrogen gas and the inert gas source positioned between the cover and the flow of TiCl4 gas.

摘要翻译： 一种使用高密度等离子体处理技术在半导体衬底上沉积含钛层的方法和装置。 钛源包括与惰性气体源（例如氩气和氢气流）一起流入处理室的TiCl 4气体。 等离子体存在于半导体衬底所在的处理室中。 该装置包括形成处理室的一部分的圆顶形盖。 盖子包括中心地布置在其中的孔，并且适于产生基本上横向于半导体衬底的TiCl 4气体流，其中一部分氢气流和惰性气体源位于盖和TiCl4流之间 加油站。

公开(公告)号：US06235646B1

公开(公告)日：2001-05-22

申请号：US09670982

申请日：2000-09-26

申请人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

发明人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

IPC分类号： H01L2131

CPC分类号： H01J37/32174 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/321 ,  Y10S438/961

摘要： Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.

摘要翻译： 描述了等离子体增强化学气相沉积（PECVD）反应器及其实现方法。 根据优选的实施方案，反应室包括与其可操作地相关联的第一和第二电极。 单个RF功率发生器连接到RF功率分配器，RF功率分配器分离RF功率并将分裂功率施加到第一和第二电极两者。 优选地，施加到两个电极的功率与不同于1:1的电极之间的功率比一致。 根据一个优选方面，反应室包括平行板PECVD系统的一部分。 根据另一个优选的方面，反应室包括感应线圈PECVD系统的一部分。 功率比优选是可调节的并且可以变化。 实现功率比调整的一种方式是改变各个电极表面积。 实现调整的另一种方式是提供能够改变输出功率的功率分配器。 还描述了PECVD处理方法。

公开(公告)号：US06214714B1

公开(公告)日：2001-04-10

申请号：US09344825

申请日：1999-06-25

申请人： Shulin Wang ,  Ming Xi ,  Zvi Lando ,  Mei Chang

发明人： Shulin Wang ,  Ming Xi ,  Zvi Lando ,  Mei Chang

IPC分类号： H01L213205

CPC分类号： H01L21/76855 ,  H01L21/28518 ,  H01L21/76843

摘要： A method of film processing comprises forming an integrated titanium/titanium nitride (Ti/TiN) film structure having an intermediate layer. The intermediate layer comprises species containing Si, and preferably containing Si and Ti, such as titanium silicide (TiSix), or TiSixOy, among others. The intermediate layer protects the underlying Ti film against chemical attack during subsequent TiN deposition using a titanium tetrachloride (TiCl4)-based chemistry. The method allows reliable Ti/TiN film integration to be achieved with excellent TiN step coverage. For example, the film structure can be used as an effective barrier layer in integrated circuit fabrication.

公开(公告)号：US06193836B1

公开(公告)日：2001-02-27

申请号：US09480313

申请日：2000-01-10

申请人： Jon Mohn ,  Mei Chang ,  Raymond Hung ,  Kenneth S. Collins ,  Ru-Liang Lee

发明人： Jon Mohn ,  Mei Chang ,  Raymond Hung ,  Kenneth S. Collins ,  Ru-Liang Lee

IPC分类号： H05H100

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/32467 ,  Y10S156/914

摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.

摘要翻译： 本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统 通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

公开(公告)号：US06179925B2

公开(公告)日：2001-01-30

申请号：US09311449

申请日：1999-05-14

申请人： John Schmitt ,  Bo Zheng ,  Mei Chang ,  Stephen Voss

发明人： John Schmitt ,  Bo Zheng ,  Mei Chang ,  Stephen Voss

IPC分类号： C23C1600

CPC分类号： C23C16/45561 ,  C23C16/4481 ,  C23C16/52

摘要： A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced. The purge additive provided at strategic locations within the deposition system provides a stabilizing effect to any precursor that remains in the transfer lines and helps to control the CVD reaction at the exclusion zone.

摘要翻译： 一种用于在沉积系统中控制前体和吹扫添加剂材料的方法和装置，包括前体材料输送系统和连接在前体材料输送系统中的组分之间或其中的多个清除添加剂输送管线。 多个清洗添加剂输送管线之一连接在安瓿和液体质量流量控制器之间，另一个连接在液体质量流量控制器和蒸发器之间，第三个连接到蒸发器。 该设备还包括连接到前体材料输送系统并具有基座的处理室，其中多个清除添加剂输送管线中的一个连接到基座。 利用该装置和伴随方法，大大降低了颗粒污染物的形成。 提供在沉积系统内的战略位置处的清洗添加剂对保留在传输管线中的任何前体提供了稳定作用，并有助于控制排除区域的CVD反应。

公开(公告)号：US6090706A

公开(公告)日：2000-07-18

申请号：US140818

申请日：1998-08-26

申请人： Susan Weiher Telford ,  Michio Aruga ,  Mei Chang

发明人： Susan Weiher Telford ,  Michio Aruga ,  Mei Chang

IPC分类号： C23C16/42 ,  C23C16/44 ,  H01L21/44

CPC分类号： C23C16/4404 ,  C23C16/42 ,  Y10S438/906

摘要： A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.

摘要翻译： 公开了一种用于预处理硅化钨沉积室的表面的方法，在先前的清洁腔室之后，以及在室中的有源衬底上沉积钨硅化物之前，首先包括用气态硅源处理室表面， 作为硅烷和含钨气体，例如WF 6，以在室表面上形成硅烷基硅化钨的第一次沉积。 在优选的实施方案中，预处理方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2），一氯硅烷（SiCl 2） SiHCl 3）或三氯硅烷（SiHCl 3），以在淀积室中的活性基底上沉积钨硅化物之前，在先前沉积的硅化钨上形成氯取代的硅烷基硅化钨沉积物。

公开(公告)号：US5983906A

公开(公告)日：1999-11-16

申请号：US918665

申请日：1997-08-22

申请人： Jun Zhao ,  Lee Luo ,  Jia-Xiang Wang ,  Xiao Liang Jin ,  Stefan Wolff ,  Talex Sajoto ,  Mei Chang ,  Paul Frederick Smith

发明人： Jun Zhao ,  Lee Luo ,  Jia-Xiang Wang ,  Xiao Liang Jin ,  Stefan Wolff ,  Talex Sajoto ,  Mei Chang ,  Paul Frederick Smith

IPC分类号： C23C14/00 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  C23F1/00

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321 ,  Y10S438/905

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5964947A

公开(公告)日：1999-10-12

申请号：US857847

申请日：1997-05-16

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了在排出室的泵送通道中导电材料的热沉积。 泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。