Apparatus for transporting a wafer and a carrier used for the same
    94.
    发明授权
    Apparatus for transporting a wafer and a carrier used for the same 失效
    用于运输晶片和用于其的载体的装置

    公开(公告)号:US5092729A

    公开(公告)日:1992-03-03

    申请号:US602679

    申请日:1990-10-24

    CPC分类号: H01L21/67748 H01L21/6831

    摘要: A wafer transporting apparatus comprising at least one carrier for supporting a substantially circular thin wafer having a flat plane, the carrier including a supporting base for supporting the wafer thereon, and a electrostatic chuck provided in the supporting base and having a contacting surface which face-wise contacts the flat plane of the wafer supported on the supporting base. The electrostatic chuck attracts the wafer so that the flat plane of the wafer contacts the contacting surface of the electrostatic chuck when the electrostatic chuck is energized. A holder holds the wafer at a position which has a predetermined positional relationship with respect to the supporting base. The carrier is selectively transported between a plurality of stations including a work station, fixing device for fixing the carrier transported to the work station at a predetermined position in the work station, and an arrangement for energizing the electrostatic chuck when the carrier is fixed at the predetermined position in the work station and deenergizing the electrostatic chuck when the carrier is apart from the predetermined position.

    摘要翻译: 一种晶片输送装置,包括至少一个载体,用于支撑具有平坦平面的基本上圆形的薄晶片,所述载体包括用于在其上支撑晶片的支撑基座和设置在所述支撑基座中并具有接触表面的静电卡盘, 明智地接触支撑在支撑基座上的晶片的平面。 当静电卡盘通电时,静电卡盘吸引晶片,使得晶片的平面与静电卡盘的接触表面接触。 保持器将晶片保持在相对于支撑基座具有预定位置关系的位置。 载体在包括工作站的多个站之间选择性地传送,用于固定在工作站中的预定位置处传送到工作站的载体的固定装置,以及当载体固定在工作站时使静电卡盘通电的装置 在工作站中的预定位置,并且当托架离开预定位置时静电卡盘断电。

    Dry etching apparatus using reactive ions
    97.
    发明授权
    Dry etching apparatus using reactive ions 失效
    使用反应离子的干蚀刻装置

    公开(公告)号:US4526643A

    公开(公告)日:1985-07-02

    申请号:US578082

    申请日:1984-02-08

    摘要: A dry etching apparatus using reactive ions is disclosed. A housing in which a workpiece is etched is provided with a cathode electrode on which the workpiece is mounted, and an anode electrode arranged opposite the cathode electrode. An etching gas is supplied to the housing, and pressure inside of the housing is held at a certain level. High frequency voltage is applied between the cathode and anode electrodes. A plurality of magnets are arranged outside of the housing to generate magnetic fields around the cathode electrode. The plurality of magnets are separated from one another, with a predetermined clearance being interposed therebetween, to form an endless track. The plurality of magnets are moved along the endless track, to thereby cause the magnetic fields to be moved in one direction on the cathode electrode.

    摘要翻译: 公开了一种使用反应离子的干蚀刻装置。 在其中蚀刻工件的壳体设置有安装有工件的阴极电极和与阴极电极相对布置的阳极电极。 蚀刻气体被供给到壳体,壳体内的压力保持在一定水平。 在阴极和阳极之间施加高频电压。 多个磁体设置在外壳的外部,以在阴极周围产生磁场。 多个磁体彼此分离,其间插入预定的间隙,以形成环形轨道。 多个磁体沿着环形轨道移动,从而使得磁场在阴极上沿一个方向移动。

    FREQUENCY CHARACTERISTIC MODIFICATION DEVICE
    100.
    发明申请
    FREQUENCY CHARACTERISTIC MODIFICATION DEVICE 有权
    频率特性修正装置

    公开(公告)号:US20150030181A1

    公开(公告)日:2015-01-29

    申请号:US14373721

    申请日:2012-12-14

    IPC分类号: G10L21/0208 G10L21/0232

    摘要: A device includes a HPF 702 that modifies frequency characteristics of a target signal; a phase correcting unit 701 that corrects the phase characteristics of the target signal to make the phase characteristics nearly equal to phase characteristics of the HPF 702; a first multiplier 705 that adjusts the gain of the signal output from the phase correcting unit 701; a second multiplier 706 that adjusts the gain of the signal output from the HPF 702; a coefficient determining unit that determines the gain coefficients of the first and second multipliers 705 and 706 in such a manner that the sum of the gain coefficient of the first multiplier 705 and the gain coefficient of the second multiplier 706 becomes a fixed value; and an adder 713 that adds the two signals output from the first multiplier 705 and second multiplier 706.

    摘要翻译: 装置包括修改目标信号的频率特性的HPF 702; 相位校正单元701,其校正目标信号的相位特性,以使相位特性几乎等于HPF 702的相位特性; 调整从相位校正单元701输出的信号的增益的第一乘法器705; 调节从HPF 702输出的信号的增益的第二乘法器706; 系数确定单元,其以第一乘法器705的增益系数和第二乘法器706的增益系数的和变为固定值的方式确定第一和第二乘法器705和706的增益系数; 以及将从第一乘法器705和第二乘法器706输出的两个信号相加的加法器713。