公开(公告)号：US20070120296A1

公开(公告)日：2007-05-31

申请号：US11604869

申请日：2006-11-28

申请人： Tatsuo Ito ,  Daiichiro Kawashima ,  Kazuo Takeda

发明人： Tatsuo Ito ,  Daiichiro Kawashima ,  Kazuo Takeda

IPC分类号： B29C45/00 ,  B29C45/26

CPC分类号： B29C45/174 ,  B29C45/2628 ,  B29C2045/0027 ,  B29L2031/3055

摘要： An injection molding apparatus includes a forming mold provided with a gas inlet through which a gas is introduced into an area between a rear molding surface in a cavity and a resin material inside the cavity. A plurality of the gas inlets is provided along a passage direction of the resin material in the cavity. In injection molding the resin molded article, a molten resin material is introduced into the cavity from a resin inlet and, when filling the inside of the cavity with the resin material, the introduction of the gas is sequentially started, beginning with a gas inlet provided in an area inside the cavity which is first filled with the resin material, thereby sequentially pressing the relevant resin material against a front molding surface of the cavity.

摘要翻译： 注射成型装置包括具有气体入口的成型模具，气体通过该入口引入空腔中的后模制表面和腔内的树脂材料之间的区域中。 沿着空腔中的树脂材料的通过方向设置多个气体入口。 在注射成型树脂成形品时，熔融树脂材料从树脂入口引入空腔，当用树脂材料填充空腔内部时，依次开始引入气体，从设置的气体入口开始 在首先填充有树脂材料的空腔内的区域内，依次将相关的树脂材料压靠在空腔的前模制表面上。

公开(公告)号：US07022558B2

公开(公告)日：2006-04-04

申请号：US10712712

申请日：2003-11-14

申请人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

发明人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

IPC分类号： H01L21/00

CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78645

摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

摘要翻译： 本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。 在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。 通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制 在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。 该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。

公开(公告)号：US20050142701A1

公开(公告)日：2005-06-30

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。

公开(公告)号：US20050051081A1

公开(公告)日：2005-03-10

申请号：US10942911

申请日：2004-09-17

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： G02F1/1368 ,  C30B13/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/477 ,  H01L21/66 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US06806099B2

公开(公告)日：2004-10-19

申请号：US10059203

申请日：2002-01-31

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： G01R3126

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置的硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US06773224B2

公开(公告)日：2004-08-10

申请号：US10101312

申请日：2002-03-20

申请人： Toshio Itou ,  Kazuo Takeda

发明人： Toshio Itou ,  Kazuo Takeda

IPC分类号： F01D1704

CPC分类号： F04D27/0207 ,  F01D17/04 ,  F01D17/08

摘要： In a compressor system, in which plural numbers of compressors are connected in parallel with, wherein flow rate of all the compressor main bodies driven under load operating condition is decreased down by closing each of the inlet guide vanes thereof, when a load of the compressor goes down, and then the compressor rushing into surge at the earliest is brought into unload operating condition. Thereafter, the flow rates of the compressors other than that brought into the un-load operating conditions are increased up, thereby conducting the operation of the compressor depending upon the load.

摘要翻译： 在压缩机系统中，多台压缩机并联连接，其中在负载运行状态下驱动的所有压缩机主体的流量通过关闭其每个入口导叶而减小，当压缩机的负载 然后将压缩机最早冲入浪涌处于卸载运行状态。 此后，除了进入负载运行条件之外的压缩机的流量增加，从而根据负载进行压缩机的操作。

公开(公告)号：US06760472B1

公开(公告)日：2004-07-06

申请号：US09457741

申请日：1999-12-10

申请人： Kazuo Takeda ,  Aritoshi Sugimoto ,  Takanori Ninomiya

发明人： Kazuo Takeda ,  Aritoshi Sugimoto ,  Takanori Ninomiya

IPC分类号： G06K900

CPC分类号： G06K19/07372 ,  G06K7/10544 ,  G06K19/06037 ,  G06K19/073 ,  G06K19/14 ,  G06K2017/0064 ,  H01L23/544 ,  H01L24/48 ,  H01L2223/54413 ,  H01L2223/5444 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor substrate has a peculiar crystal defect. Crystal defects in a fixed area of a substrate can be treated as data acquired by coding the distribution of the crystal defects. The coded data is utilized for certificate data of an IC card by identifying a semiconductor substrate itself.

摘要翻译： 半导体衬底具有特殊的晶体缺陷。 可以将衬底的固定区域中的晶体缺陷视为通过编码晶体缺陷的分布而获得的数据。 通过识别半导体衬底本身，将编码数据用于IC卡的证书数据。

公开(公告)号：US06683683B2

公开(公告)日：2004-01-27

申请号：US10084059

申请日：2002-02-28

申请人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

发明人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

IPC分类号： G01N2188

CPC分类号： G01N21/9505 ,  G01N21/9501

摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

摘要翻译： 提供了一种用于根据从将样本照射光束获得的样本的光信息检测存在于半导体样品表面和/或样品内部的缺陷的缺陷检查装置，其包括检测装置， 存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

公开(公告)号：US06226079B1

公开(公告)日：2001-05-01

申请号：US09161393

申请日：1998-09-29

申请人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

发明人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

IPC分类号： G01N2100

CPC分类号： G01N21/9501 ,  G01N21/47

摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.

摘要翻译： 公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。 提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光 一个是相同的 提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值 深度。 提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

公开(公告)号：US5141881A

公开(公告)日：1992-08-25

申请号：US510469

申请日：1990-04-18

申请人： Kazuo Takeda ,  Toshimasa Sadakata ,  Teruo Tabata ,  Nobuyuki Sekikawa ,  Tadayoshi Takada ,  Yasuhiro Tamada ,  Yoshiaki Sano

发明人： Kazuo Takeda ,  Toshimasa Sadakata ,  Teruo Tabata ,  Nobuyuki Sekikawa ,  Tadayoshi Takada ,  Yasuhiro Tamada ,  Yoshiaki Sano

IPC分类号： H01L21/761 ,  H01L21/8222

CPC分类号： H01L21/761 ,  H01L21/8222 ,  Y10S148/009 ,  Y10S148/01

摘要： A method of making a semiconductor integrated circuit provided with an isolating region constituted of an upper and lower isolating regions, and integrated circuit element regions is disclosed, wherein: the lower isolating region is diffused upward to a depth of a little more than half the thickness of an epitaxial layer to link with the upper isolating region prior to a doping of the upper isolating region; the doping of the lower isolating region and integrated circuit element regions, is implemented by means of ion implantation through a resist film which is capable of blocking ions implanted and in which specified doping windows have been formed in advance, and a SiO.sub.2 film is used as a reference mask in an ion implanting step, and the respective borders of the upper isolating region and the specified regions of the circuit elements is determined by self-alignment. The method has advantages that the upper isolating region can be prepared by heat-treatment for relatively short time, reducing lateral diffusion and the occupied area thereof, and slippage by masking is remarkably reduced, providing a semiconductor integrated circuit with high density.