摘要:
A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.
摘要:
An apparatus for generating burst-mode laser includes: a trigger signal generator for generating a burst trigger signal; a first light source for generating a first optical signal in a form of pulse; a second light source for generating a second optical signal in the form of pulse; an optical switch for selecting between the first optical signal and the second optical signal according to the burst trigger signal to output the selected one; an optical amplifier for amplifying the optical signal output from the optical switch; and a wavelength tuner for tuning a wavelength of the optical signal amplified by the optical amplifier. An oscillation line-width and/or a polarization state of the first optical signal are different from an oscillation line-width and/or a polarization state of the second optical signal.
摘要:
A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.
摘要:
A wafer-level packaged optical subassembly includes: a substrate element, the substrate element including a top layer and a base layer being bonded with the top layer; a top window cover being bonded with the top layer of the substrate element; and a plurality of active optoelectronic elements disposed within the substrate element. At least one primary cavity is defined in the substrate element by the top layer and the base layer, and configured for accommodating the active optoelectronic elements. A plurality of peripheral cavities are defined around the at least one primary cavity as alignment features for external opto-mechanical parts.
摘要:
A semiconductor laser light source includes a semiconductor laser block mounted on a stem which is a support base, the semiconductor laser block which is a block has a plurality of surfaces, and a plurality of semiconductor laser chips emit laser light beams of different wavelengths, respectively. Each of the semiconductor laser chips is mounted on each surface of the semiconductor laser block.
摘要:
Embodiments are disclosed that relate to reducing inductive losses and controlling driver and laser diode temperatures in an optical assembly comprising a laser diode. For example, one disclosed embodiment provides an optical assembly comprising a printed circuit board, and a laser diode package and laser diode driver mounted to the printed circuit board. Further, a heat sink is coupled to the laser diode driver and configured to provide a first thermal path for conducting heat from the laser diode driver. Additionally, a coupler may further be coupled to the laser diode package and printed circuit board, wherein the coupler is configured to provide a second, different thermal path for conducting heat from the laser diode package.
摘要:
Various embodiments of an arrangement for generating fast wavelength-switched optical signal are described herein. In some embodiments, the arrangement can be integrated with lasers, optical waveguides, optical splitters and gates to form a fast wavelength switched monolithic optical source. In some embodiments, an optical modulator is incorporated into the arrangement to form a fast wavelength switched optical transmitter.
摘要:
Fabricating a semiconductor chip with backside optical vias is provided. A silicon wafer is received for processing. The silicon wafer includes an optically transparent oxide layer on a frontside of the silicon wafer. A complementary metal-oxide-semiconductor layer is formed on top of the optically transparent oxide layer. A backside of the silicon wafer is etched to form optical vias in a silicon substrate using the optically transparent oxide layer as an etch-stop.
摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
摘要:
An optical switch assembly comprising at least two optical amplifiers (10, 20), means for applying a first input signal to one end of both amplifiers (10, 20) and a second input signal to another end, and means for simultaneously driving one or other of the amplifiers into a saturated state whilst the other is unsaturated such that only the amplifier that is unsaturated provides any significant amplification to the input signals at each end, and means for feeding the amplified output signals from the amplifiers to at least two output nodes such that the two amplifiers (10, 20) are connected to the two output nodes in opposite connections.