公开(公告)号：US20050062060A1

公开(公告)日：2005-03-24

申请号：US10923046

申请日：2004-08-23

申请人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumui Yoshimoto

发明人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumui Yoshimoto

IPC分类号： H01L29/24 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

CPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/382 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2924/00011 ,  H01L2224/45099

摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

摘要翻译： 为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层 的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和 在第一主表面侧的p型氮化物半导体层。 氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光 表面。

公开(公告)号：US06597016B1

公开(公告)日：2003-07-22

申请号：US09482076

申请日：2000-01-13

申请人： Koichiro Yuki ,  Tohru Saitoh ,  Minoru Kubo ,  Kiyoshi Ohnaka ,  Akira Asai ,  Koji Katayama

发明人： Koichiro Yuki ,  Tohru Saitoh ,  Minoru Kubo ,  Kiyoshi Ohnaka ,  Akira Asai ,  Koji Katayama

IPC分类号： H01L310312

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/167

摘要： An Si1−yGey layer (where 0

摘要翻译： 在半导体衬底上依次形成Si1-yGey层（其中0

公开(公告)号：US06399993B1

公开(公告)日：2002-06-04

申请号：US09786551

申请日：2001-03-07

申请人： Teruhito Ohnishi ,  Akira Asai ,  Takeshi Takagi ,  Tohru Saitoh ,  Yo Ichikawa ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Koji Katayama ,  Yoshihiko Kanzawa

发明人： Teruhito Ohnishi ,  Akira Asai ,  Takeshi Takagi ,  Tohru Saitoh ,  Yo Ichikawa ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Koji Katayama ,  Yoshihiko Kanzawa

IPC分类号： H01L2972

CPC分类号： H01L21/76237 ,  H01L21/8249

摘要： In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.

摘要翻译： 在双极晶体管块中，SiGe单晶的基极层（20a）和几乎100％的Si单晶的发射极层（26）依次层叠在集电极扩散层（9）上。 在基底层（20a）的两个边缘上设置有由多晶硅制成的基底底涂层绝缘膜（5a）和基底延伸电极（22）。 基底层（20a）具有与基底底涂层绝缘膜（5a）的厚度相等的周边部分和比周边部分厚的中心部分。 用于CMOS块的基底涂层绝缘膜（5a）和栅极绝缘膜（5b和5c）由相同的氧化物膜制成。 由于作为基底层的SiGe层与基底底涂层绝缘膜5a之间的热膨胀系数的差异导致的应力可以降低，并且实现了高可靠性的BiCMOS器件。

公开(公告)号：US06337536B1

公开(公告)日：2002-01-08

申请号：US09336764

申请日：1999-06-21

申请人： Hideki Matsubara ,  Koji Katayama ,  Toshihiko Takebe

发明人： Hideki Matsubara ,  Koji Katayama ,  Toshihiko Takebe

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A white color or neutral color LED having an n-type ZnSe single crystal substrate doped with I, Cl, Br, Al, Ga or In as SA-emission centers and an epitaxial film structure including a ZnSe, ZnCdSe or ZnSeTe active layer and a pn-junction. The active layer emits blue or bluegreen light. The SA-emission centers in the ZnSe substrate convert blue or bluegreen light to yellow or orange SA-emission. The blue or bluegreen light from the epitaxial film structure and the yellow or orange light from the ZnSe substrate synthesize white color light or neutral color light between red and blue.

摘要翻译： 具有掺杂有I，Cl，Br，Al，Ga或In的n型ZnSe单晶衬底作为SA发射中心的白色或中性色LED以及包括ZnSe，ZnCdSe或ZnSeTe活性层的外延膜结构和 pn结。 有源层发出蓝色或蓝绿色光。 ZnSe衬底中的SA发射中心将蓝色或蓝绿光转换为黄色或橙色SA发射。 来自外延膜结构的蓝色或蓝绿色光以及来自ZnSe衬底的黄色或橙色光合成白色光或红色和蓝色之间的中性色光。

公开(公告)号：US06224160B1

公开(公告)日：2001-05-01

申请号：US09219440

申请日：1998-12-23

申请人： Hiroshi Takeuchi ,  Shigenori Takehara ,  Koji Katayama

发明人： Hiroshi Takeuchi ,  Shigenori Takehara ,  Koji Katayama

IPC分类号： A47C700

CPC分类号： A47C7/40 ,  A47C3/00 ,  A47C7/02

摘要： A chair is provided which includes an inner member for supporting the body of a person and an outer member for supporting the right and left edges of the inner member. The inner member is made of a synthetic resin and formed into a plate so that the inner member is elastically deformed under the weight of the person. The inner member is attached to the outer member with its side portions supported. Thus, behind the inner member is a space for allowing the inner member to be deformed. In order to be applied to the seat of a chair, preferably, the outer member includes a metal base and a pair of auxiliary supporting elements to be fitted on the metal base. The inner member and the auxiliary supporting elements are fixed to each other in a non-releasable manner by an engaging assembly including engagement nails and engagement holes.

摘要翻译： 提供了一种椅子，其包括用于支撑人体的内部构件和用于支撑内部构件的左右边缘的外部构件。 内部构件由合成树脂制成并形成为板，使得内部构件在人的重量下弹性变形。 内部构件附接到外部构件，其侧部被支撑。 因此，在内部构件之后是允许内部构件变形的空间。 为了适用于椅子的座椅，优选地，外部构件包括金属基座和一对辅助支撑元件以装配在金属基座上。 内部构件和辅助支撑元件通过包括接合钉和接合孔的接合组件以不可释放的方式彼此固定。

公开(公告)号：US5699150A

公开(公告)日：1997-12-16

申请号：US581205

申请日：1995-12-29

申请人： Koji Katayama

发明人： Koji Katayama

IPC分类号： B60R21/00 ,  G01S7/48 ,  G01S7/481 ,  G01S17/89 ,  G01S17/93 ,  G01C3/08 ,  G02B26/08

CPC分类号： G01S7/4817 ,  G01S17/89 ,  G01S7/4811 ,  G01S7/4813

摘要： In this vehicle optical radar apparatus, the number of parts constituting an oscillating mechanism can be reduced, assembling facilities can be improved, an accumulated error of the parts can be decreased, and light weight and low cost can be obtained. An oscillating member (29) consists of a resin-molded product constituted by a light-sending mirror holding portion (33), a light-receiving mirror holding portion (34), and a cylindrical member. A shaft (30) fitted with the cylindrical member of the oscillating member (29) and a rotating shaft (22a) of a pulse motor are pivotally supported by a housing (24) and a cover which are the case of the pulse motor and consist of a resin-molded product. A follower (36) is rotatably attached to a follower attachment plate (35) attached to the light-receiving mirror holding portion (34). The follower (36) is stored in an eccentric cam groove (26a) of the cam (26) fixed to the rotating shaft (22a). Therefore, a light-sending mirror (14) and the light-receiving mirror (15) are synchronously oscillated about the shaft (30) as serving as an oscillation center.

摘要翻译： 在该车辆用光学雷达装置中，能够减少构成摆动机构的部件的数量，能够提高组装设备，能够减少部件的累积误差，能够获得轻便且成本低的成本。 摆动构件（29）由发光镜保持部（33），受光镜保持部（34）和筒状构件构成的树脂成形体构成。 装配有摆动构件（29）的圆柱形构件的轴（30）和脉冲电动机的旋转轴（22a）由壳体（24）和脉冲电机的壳体（24）可枢转地支撑，并且包括 的树脂成型品。 从动件（36）可旋转地安装在安装在受光镜保持部（34）上的随动件安装板（35）上。 从动件（36）存储在固定在旋转轴（22a）上的凸轮（26）的偏心凸轮槽（26a）中。 因此，作为振荡中心，发光镜（14）和受光镜（15）围绕轴（30）同步摆动。

公开(公告)号：US5001379A

公开(公告)日：1991-03-19

申请号：US394444

申请日：1989-08-16

申请人： Koji Katayama

发明人： Koji Katayama

IPC分类号： H01F5/04 ,  H02K3/52 ,  H02K5/22

CPC分类号： H01F5/04 ,  H02K3/525 ,  H02K5/225

摘要： An electric motor comprising a rotor having a permanent magnet and a stator having a stator coil disposed around the rotor. The electric motor also comprises a coil bobbin having a flange portion at opposite ends of a cylindrical body portion, one of the flange portions having a groove in which an insertion groove for inserting a coil terminal therein and other flange portion having a coil terminal engaging portion. The electric motor also comprises a coil terminal having one end engaged with the engaging portion and the other end connected to an external connection terminal, and a stator coil which is wound on the bobbin and connected between the coil terminal bend turn portion and the engaging end portion.

摘要翻译： 一种电动机，包括具有永磁体的转子和具有绕转子设置的定子线圈的定子。 电动机还包括线圈架，其具有在圆筒体部的相对端部的凸缘部，凸缘部中的一个具有槽，用于将线圈端子插入其中的插入槽和具有线圈端子接合部的其它凸缘部 。 电动机还包括线圈端子，其一端与接合部分接合，另一端连接到外部连接端子，定子线圈缠绕在线轴上并连接在线圈端子弯曲转弯部分和接合端 一部分。

公开(公告)号：US08942025B2

公开(公告)日：2015-01-27

申请号：US13809175

申请日：2012-08-09

申请人： Koji Katayama ,  Satoru Mitani ,  Takeshi Takagi

发明人： Koji Katayama ,  Satoru Mitani ,  Takeshi Takagi

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/00 ,  G11C13/0007 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/56 ,  G11C2213/79

摘要： A variable resistance nonvolatile memory element writing method according to the present disclosure includes: (a) changing a variable resistance layer to a low resistance state by applying, to a second electrode, a first voltage which is negative with respect to a first electrode; and (b) changing the variable resistance layer to a high resistance state. Step (b) includes: (i) applying, to the second electrode, a second voltage which is positive with respect to the first electrode; and (ii) changing the variable resistance layer to the high resistance state by applying, to the second electrode, a third voltage, which is negative with respect to the first electrode and is smaller than the absolute value of a threshold voltage for changing the variable resistance layer from the high resistance state to the low resistance state, after the positive second voltage is applied in step (i).

摘要翻译： 根据本公开的可变电阻非易失性存储元件写入方法包括：（a）通过向第二电极施加相对于第一电极为负的第一电压，将可变电阻层改变为低电阻状态; 和（b）将可变电阻层改变为高电阻状态。 步骤（b）包括：（i）向第二电极施加相对于第一电极为正的第二电压; 和（ii）通过向所述第二电极施加相对于所述第一电极为负的第三电压并且小于用于改变所述变量的阈值电压的绝对值，将所述可变电阻层改变为高电阻状态 电阻层从高电阻状态到低电阻状态，在步骤（i）中施加正的第二电压之后。

公开(公告)号：US08772064B2

公开(公告)日：2014-07-08

申请号：US13289507

申请日：2011-11-04

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/8252 ,  H01L21/18 ,  H01S5/343 ,  H01S5/10 ,  H01S5/02 ,  H01S5/32 ,  H01S5/16

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/3202 ,  H01S2301/14

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有六边形III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括形成在所述半极性主表面上的衬底和半导体区域; 在六边形III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08741674B2

公开(公告)日：2014-06-03

申请号：US13335560

申请日：2011-12-22

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00 ,  H01L21/8252

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。 第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。 在激光结构中，第一表面与第二表面相对。 第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。