Deposition of N-metal films comprising aluminum alloys
    103.
    发明授权
    Deposition of N-metal films comprising aluminum alloys 有权
    包含铝合金的N金属膜的沉积

    公开(公告)号:US09145612B2

    公开(公告)日:2015-09-29

    申请号:US13930194

    申请日:2013-06-28

    Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

    Abstract translation: 提供了沉积包括铝合金的膜的方法,其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4,TaCl 5和HfCl 4的金属卤化物的金属卤化物前体,以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物,二乙基氢化铝,甲基二氢铝和式[(C x H y)3-a AlHa] n的烷基铝氢化物的烷基铝前体,其中x具有1至3的值,y 具有2x + 2的值,a具有1至2的值,并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷,甲基吡咯烷烃,二(甲基吡咯烷)甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

    Methods for depositing films comprising cobalt and cobalt nitrides
    104.
    发明授权
    Methods for depositing films comprising cobalt and cobalt nitrides 有权
    用于沉积包含钴和钴的氮化物的膜的方法

    公开(公告)号:US09005704B2

    公开(公告)日:2015-04-14

    申请号:US14198776

    申请日:2014-03-06

    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

    Abstract translation: 含钴膜,以及提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜,第一前体具有由以下表示的结构:其中每个R独立地为C 1 -C 6取代或未取代的烷烃,支链或 支链烷烃,取代或未取代的烯烃,支链或非支链烯烃,取代或未取代的炔烃,支链或非支链炔烃或取代或未取代的芳烃,L是包含路易斯碱的配位配体。

    BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES

    公开(公告)号:US20250006552A1

    公开(公告)日:2025-01-02

    申请号:US18753144

    申请日:2024-06-25

    Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.

    SELECTIVE DEPOSITION PROCESSES ON SEMICONDUCTOR SUBSTRATES

    公开(公告)号:US20250006485A1

    公开(公告)日:2025-01-02

    申请号:US18216286

    申请日:2023-06-29

    Abstract: Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

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