Abstract:
Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands.
Abstract:
Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.
Abstract:
Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
Abstract translation:提供了沉积包括铝合金的膜的方法,其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4,TaCl 5和HfCl 4的金属卤化物的金属卤化物前体,以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物,二乙基氢化铝,甲基二氢铝和式[(C x H y)3-a AlHa] n的烷基铝氢化物的烷基铝前体,其中x具有1至3的值,y 具有2x + 2的值,a具有1至2的值,并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷,甲基吡咯烷烃,二(甲基吡咯烷)甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。
Abstract:
Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.
Abstract:
Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.
Abstract:
Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.
Abstract:
A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.
Abstract:
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
Abstract:
Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof.
Abstract:
Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof.