公开(公告)号：US20090095634A1

公开(公告)日：2009-04-16

申请号：US11907589

申请日：2007-10-15

申请人： Natsuki Makino ,  Keisuke Namiki ,  Kunihito Ide ,  Junji Kunisawa ,  Katsuyuki Musaka ,  Philippe Vereecken ,  Brett C. Baker-O'Neal ,  Hariklia Deligianni ,  Keith Kwietniak

发明人： Natsuki Makino ,  Keisuke Namiki ,  Kunihito Ide ,  Junji Kunisawa ,  Katsuyuki Musaka ,  Philippe Vereecken ,  Brett C. Baker-O'Neal ,  Hariklia Deligianni ,  Keith Kwietniak

IPC分类号： C25D5/48 ,  C25D5/00

CPC分类号： C25D17/00 ,  C25D17/008 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76877

摘要： A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary cathode on an ring-shaped seal member for sealing a peripheral portion of the substrate; bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution; and supplying electric currents between the anode and the conductive film, and between the anode and the auxiliary cathode to carry out plating.

摘要翻译： 电镀方法可以在基板的整个表面（包括外周表面）上形成均匀厚度的镀膜。 电镀方法包括：将阳极设置成面对形成在用作阴极的基板上的导电膜，并将辅助阴极设置在用于密封基板的周边部分的环形密封构件上; 使导电膜，阳极和辅助阴极与电镀液接触; 并且在阳极和导电膜之间以及阳极和辅助阴极之间提供电流以进行电镀。

公开(公告)号：US20080191317A1

公开(公告)日：2008-08-14

申请号：US11674453

申请日：2007-02-13

申请人： Guy Moshe Cohen ,  Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

发明人： Guy Moshe Cohen ,  Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C30B11/12 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L21/28525 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094

摘要： Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.

摘要翻译： 本文公开了一种通过在衬底的表面上形成具有至少一个开口的掩模来形成具有纳米线的纳米结构的方法，以暴露衬底表面的一部分; 通过电镀或化学电镀将能够催化半导体纳米线生长的金属的颗粒沉积在基板的暴露表面上; 并通过气 - 液 - 固（VLS）工艺在具有前体气体的电镀衬底上生长纳米线。 还公开了包括通过上述方法制备的纳米线的纳米结构。

公开(公告)号：US20080165576A1

公开(公告)日：2008-07-10

申请号：US11620445

申请日：2007-01-05

申请人： Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

发明人： Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

IPC分类号： G11C11/15 ,  H01L21/00 ,  G11B5/66

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1675 ,  Y10S977/933

摘要： A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1

摘要翻译： 提供了包含交替的第一和第二铁磁材料层的存储器存储装置。 每个第一铁磁材料层具有第一层厚度（L L1> 1）和第一临界电流密度（J C 1 H 1），并且每个第二铁磁材料层具有第二层厚度 （L 2 2）和第二临界电流密度（JC 2 N 2），条件是JC 1 < L 1大于约300nm，L 2 2范围为约20nm至约200nm。 该装置还包括由畴壁分开的相反方向的交替磁畴。 在施加驱动电流时，磁畴和畴壁可在第一和第二铁磁材料层上移动。 相应地，数据可以作为磁畴和畴壁的位置存储在存储器存储装置中。

公开(公告)号：US20070256937A1

公开(公告)日：2007-11-08

申请号：US11417146

申请日：2006-05-04

申请人： Veeraraghavan Basker ,  John Cotte ,  Hariklia Deligianni ,  Matteo Flotta

发明人： Veeraraghavan Basker ,  John Cotte ,  Hariklia Deligianni ,  Matteo Flotta

IPC分类号： C25D7/12

CPC分类号： C25D5/54 ,  C25D5/006 ,  C25D5/02 ,  C25D7/123 ,  C25D11/005 ,  C25D11/024 ,  C25D17/001 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/2885

摘要： An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

摘要翻译： 一种电化学方法，包括：提供与导电表面电接触的125mm或更大的半导体晶片，其中所述半导体晶片的至少一部分与电解液接触，所述半导体晶片用作第一电极; 在所述电解液中提供第二电极，所述第一和第二电极连接到电源的相对端; 并且在第一和第二电极之间施加用作为电流的光源照射半导体晶片的表面。 本发明还涉及一种包括光源和用于进行电化学过程的电化学组分的设备。

公开(公告)号：US20070222066A1

公开(公告)日：2007-09-27

申请号：US11308433

申请日：2006-03-24

申请人： Cyril Cabral ,  Hariklia Deligianni ,  Randolph Knarr ,  Sandra Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe Vereecken

发明人： Cyril Cabral ,  Hariklia Deligianni ,  Randolph Knarr ,  Sandra Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe Vereecken

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US07217655B2

公开(公告)日：2007-05-15

申请号：US11047652

申请日：2005-02-02

申请人： Cyril Cabral, Jr. ,  Stefanie R. Chiras ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Andrew J. Kellock ,  Judith M. Rubino ,  Roger Y. Tsai

发明人： Cyril Cabral, Jr. ,  Stefanie R. Chiras ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Andrew J. Kellock ,  Judith M. Rubino ,  Roger Y. Tsai

IPC分类号： H01L21/4763

CPC分类号： H01L21/2885 ,  C25D9/08 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2224/05007

摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

公开(公告)号：US20060166474A1

公开(公告)日：2006-07-27

申请号：US11050790

申请日：2005-01-27

申请人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

发明人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/20

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20050077173A1

公开(公告)日：2005-04-14

申请号：US10930823

申请日：2004-09-01

申请人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Brett Baker ,  Hariklia Deligianni ,  Phillipe Vereecken

发明人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Brett Baker ,  Hariklia Deligianni ,  Phillipe Vereecken

IPC分类号： C25D17/14 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/004 ,  C25D17/008 ,  H01L21/2885

摘要： The present invention provides a plating apparatus for a substrate which can plate a substrate under uniform pressure without increasing a load to be applied while holding the entire surface of a porous member in contact with the surface, to be plated, of the substrate. The plating apparatus for a substrate, including: a substrate holder for holding a substrate; a cathode unit having a seal member for abutting against and sealing, in a water-tight manner, a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder, and a cathode electrode which is brought into contact with the substrate to supply current to the substrate; an anode vertically moveable disposed in confronting relation to the surface, to be plated, of the substrate; a plating solution impregnated material disposed between the anode and the surface, to be plated, of the substrate, the plating solution impregnated material being made of a water-retentive material; and a porous member disposed between the plating solution impregnated material and the surface, to be plated, of the substrate; wherein the plating solution impregnated material is constructed of a plurality of separate members.

摘要翻译： 本发明提供了一种用于基板的电镀装置，其能够在保持多孔构件的整个表面与基板的被镀表面接触的同时，在均匀的压力下对基板进行平板化，而不增加要施加的载荷。 一种基板电镀装置，包括：用于保持基板的基板支架; 阴极单元，具有密封构件，该密封构件以水密方式邻接并密封被基板保持件保持的基板的待镀表面的周边部分，以及与基板保持件接触的阴极电极 所述基板向所述基板提供电流; 可垂直移动的阳极，其被布置成与所述基板的要被电镀的表面相对; 电镀溶液浸渍材料，其设置在阳极和要被电镀的表面之间，所述电镀液浸渍材料由保水材料制成; 以及设置在所述电镀溶液浸渍材料和要被电镀的所述表面的多孔构件之间; 其中所述电镀溶液浸渍材料由多个分开的构件构成。

公开(公告)号：US5874199A

公开(公告)日：1999-02-23

申请号：US946797

申请日：1997-10-08

申请人： Hariklia Deligianni ,  William Hsioh-Lien Ma

发明人： Hariklia Deligianni ,  William Hsioh-Lien Ma

IPC分类号： H01L21/48 ,  H01L21/60 ,  H05K3/34 ,  G03C5/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H05K3/3473 ,  H01L2224/13099 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0577

摘要： Ball limited metallurgy is used in conjunction with defining a solder deposit volume using an aperture in a resist layer and reflow of electroplated solder materials deposited in that aperture, possibly with planarization after deposition to enhance volume accuracy, to develop solder deposits extending up to 10 .mu.m or more above the surface on which solder is deposited. Such deposits can be made at fine pitch and provide solder connections of high reliability even when the distance which must be bridged by the solder connection is not easily or reliably regulated.

摘要翻译： 结合使用球限制冶金，使用抗蚀剂层中的孔和沉积在该孔中的电镀焊料的回流来限定焊料沉积体积，可能在沉积之后进行平面化以提高体积精度，以开发延伸至10μm的焊料沉积 m以上的焊料沉积在表面上方。 这样的沉积物可以以细间距制造，并提供高可靠性的焊接连接，即使当焊接连接必须桥接的距离不容易或可靠地调节时。

公开(公告)号：US09222194B2

公开(公告)日：2015-12-29

申请号：US12806730

申请日：2010-08-19

申请人： Charles L. Arvin ,  Raschid J. Bezama ,  Hariklia Deligianni

发明人： Charles L. Arvin ,  Raschid J. Bezama ,  Hariklia Deligianni

IPC分类号： C25D21/08 ,  C25D5/48 ,  C25F3/12 ,  C25F7/00

CPC分类号： C25D17/00 ,  C25D5/48 ,  C25D21/08 ,  C25F3/02 ,  C25F3/12 ,  C25F7/00

摘要： An electroplating/etch apparatus including a fluid jet and a dryer present over the tank containing the electrolyte for the electroplating/etch process. The fluid jet and the dryer remove excess liquids, such as electrolyte, from the component being plated or etched, e.g., working electrode. The working electrode is present on a holder that traverses from a first position within the tank during a plating or etch operation to a second position that is outside the containing the plating electrolyte. The fluid jet rinses the working electrode when the holder is in the second position, and the forced air dryer blows any remaining fluid from the fluid jet and the electrolyte from the working electrode into the tank.

摘要翻译： 一种电镀/蚀刻装置，包括存在于含有用于电镀/蚀刻工艺的电解质的罐的流体射流和干燥器。 流体射流和干燥器从被电镀或蚀刻的部件，例如工作电极上去除多余的液体，例如电解质。 工作电极存在于在电镀或蚀刻操作期间从罐中的第一位置穿过到包含电镀电解质外侧的第二位置的保持器。 当保持器处于第二位置时，流体喷射器冲洗工作电极，并且强制空气干燥器将来自流体射流和电解质的任何剩余流体从工作电极吹入罐中。