公开(公告)号：US20140326999A1

公开(公告)日：2014-11-06

申请号：US14336107

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1052 ,  G11C11/405 ,  G11C16/0433 ,  G11C2211/4016 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7833 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Abstract translation: 目的是提供具有新颖结构的半导体器件。 半导体器件包括第一布线; 第二布线 第三线; 第四布线 具有第一栅电极，第一源电极和第一漏电极的第一晶体管; 以及具有第二栅电极，第二源电极和第二漏电极的第二晶体管。 第一晶体管设置在包括半导体材料的衬底中。 第二晶体管包括氧化物半导体层。

公开(公告)号：US20140319531A1

公开(公告)日：2014-10-30

申请号：US14263396

申请日：2014-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: H01L27/12

CPC classification number: H01L51/5253 ,  G02F1/136286 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G3/3648 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3211 ,  H01L27/3248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/0097 ,  H01L51/524 ,  H01L2251/301 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101. The decoder 100 includes a plurality of NAND circuits each including p-channel TFTs 104 to 106 connected to each other in parallel and other p-channel TFTs 107 to 109 connected to each other in series. The buffer section 101 includes a plurality of buffers each including three p-channel TFTs 114 to 116.

Abstract translation: 可以提供廉价的显示装置，以及使用该装置的电气装置。 在像素部分和驱动电路被包含在同一绝缘表面上的显示装置中，驱动电路包括解码器100和缓冲器部分101.解码器100包括多个NAND电路，每个NAND电路包括p沟道 并联连接的TFT104〜106，以及串联连接的其他p沟道TFT107〜109。 缓冲器部分101包括多个缓冲器，每个缓冲器包括三个p沟道TFT 114至116。

公开(公告)号：US08872572B2

公开(公告)日：2014-10-28

申请号：US14147647

申请日：2014-01-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Atsushi Umezaki

IPC: H03L5/00 ,  H03K19/00 ,  H03K17/687 ,  H03K19/0185 ,  H01L27/12

CPC classification number: G09G3/3677 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2330/021 ,  G11C19/00 ,  H01L27/0207 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/687 ,  H03K19/0013 ,  H03K19/018557 ,  H03K19/018571

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

公开(公告)号：US20140256116A1

公开(公告)日：2014-09-11

申请号：US14285718

申请日：2014-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Koji Ono ,  Jun Koyama

IPC: H01L21/48 ,  H01L21/02

CPC classification number: H01L21/4846 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/02367 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627

Abstract: There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.

Abstract translation: 提供了即使在将显示区域的尺寸增加到大尺寸屏幕的情况下也实现低功耗的半导体器件的结构及其制造方法。 像素部分中的栅电极形成为主要包含W的材料膜，主要包含Al的材料膜和主要包含Ti的材料膜以降低布线电阻的三层结构。 使用IPC蚀刻装置蚀刻布线。 栅电极为锥形，成为锥形的区域的宽度为1μm以上。

公开(公告)号：US08829528B2

公开(公告)日：2014-09-09

申请号：US13683270

申请日：2012-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1259 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/13625 ,  G02F2001/136295 ,  H01L21/02565 ,  H01L21/44 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3276 ,  H01L27/3297 ,  H01L29/66969 ,  H01L29/7869

Abstract: A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer.

Abstract translation: 省略了用于形成显示装置中使用的半导体器件的岛状半导体层的步骤，以便以高生产率和低成本制造半导体器件。 通过四个光刻工艺制造半导体器件：用于形成用于形成接触孔并形成像素电极的源电极和漏电极的栅电极的四个步骤。 在形成接触孔的步骤中，形成其中去除了半导体层的沟槽部分，从而防止了寄生晶体管的形成。 使用氧化物半导体作为其中形成沟道的半导体层的材料，并且在半导体层上设置具有比半导体层更高绝缘性的氧化物半导体。

公开(公告)号：US20140241054A1

公开(公告)日：2014-08-28

申请号：US14190244

申请日：2014-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G11C11/40

CPC classification number: G11C7/02 ,  G11C11/403 ,  G11C11/4074 ,  G11C11/4096 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with such a new structure that the effect of variation in transistor characteristics can be reduced to achieve less variation in the output voltage of a memory cell. A memory cell includes a source follower (common drain) transistor for reading data held in a gate. A voltage applied to a transistor generating a reference current flowing through the memory cell is determined so that a gate-source voltage is approximately equal to the threshold voltage of the transistor. With such a structure, data stored in the memory cell can be read as a voltage that is less influenced by variation of transistors such as the field-effect mobility and the size.

Abstract translation: 为了提供具有这样一种新结构的半导体器件，可以减小晶体管特性的变化的影响，以实现较小的存储单元的输出电压的变化。 存储单元包括用于读取保持在门中的数据的源极跟随器（公共漏极）晶体管。 确定施加到产生流过存储单元的参考电流的晶体管的电压，使得栅极 - 源极电压近似等于晶体管的阈值电压。 利用这种结构，存储在存储单元中的数据可以被读取为受诸如场效应迁移率和尺寸等晶体管的变化影响较小的电压。

公开(公告)号：US20140232622A1

公开(公告)日：2014-08-21

申请号：US14182351

申请日：2014-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Jun Koyama

IPC: G09G3/32 ,  H02J4/00

CPC classification number: G09G3/3283 ,  G09G3/2007 ,  G09G3/3241 ,  G09G3/325 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2310/0262 ,  G09G2310/0272 ,  G09G2310/0286 ,  G09G2310/0297 ,  G09G2320/0233 ,  H02J4/00 ,  Y10T307/696

Abstract: A current source circuit includes current sources that are each configured to receive an external set signal and to control an output current value based on the external set signal. A changing over circuit that is electrically connected to the current sources and a set of output lines selects one of the current sources to be electrically connected to each of the output lines.

Abstract translation: 电流源电路包括电流源，每个电流源被配置为接收外部设置信号并且基于外部设置信号来控制输出电流值。 电连接到电流源和一组输出线的变换电路选择电连接到每个输出线的电流源中的一个。

公开(公告)号：US20140184165A1

公开(公告)日：2014-07-03

申请号：US14107347

申请日：2013-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Minoru TAKAHASHI ,  Kei Takahashi ,  Jun Koyama ,  Junpei Momo ,  Tamae Moriwaka

IPC: H01M10/48

CPC classification number: H01M10/48 ,  G01R31/3606 ,  H01M10/486

Abstract: To provide a power storage device, an operation condition of which is easily analyzed. A secondary battery includes a sensor that is a measurement unit, a microcontroller unit that is a determination unit, and a memory that is a memory unit. With the sensor, conditions of the secondary battery such as the remaining battery power, the voltage, the current, and the temperature are measured. The microcontroller unit performs arithmetic processing of the measurement results and determines the operation condition of the secondary battery. Further, the microcontroller unit stores the measurement result in the memory in accordance with the operation condition of the secondary battery.

Abstract translation: 为了提供蓄电装置，其操作条件容易分析。 二次电池包括作为测量单元的传感器，作为确定单元的微控制器单元和作为存储单元的存储器。 使用传感器，测量二次电池的状况，例如剩余电池功率，电压，电流和温度。 微控制器单元执行测量结果的算术处理并确定二次电池的操作状态。 此外，微控制器单元根据二次电池的操作条件将测量结果存储在存储器中。

公开(公告)号：US08717262B2

公开(公告)日：2014-05-06

申请号：US13731482

申请日：2012-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G09G3/30

CPC classification number: H01L51/5253 ,  G02F1/136286 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G3/3648 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3211 ,  H01L27/3248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/0097 ,  H01L51/524 ,  H01L2251/301 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101. The decoder 100 includes a plurality of NAND circuits each including p-channel TFTs 104 to 106 connected to each other in parallel and other p-channel TFTs 107 to 109 connected to each other in series. The buffer section 101 includes a plurality of buffers each including three p-channel TFTs 114 to 116.

Abstract translation: 可以提供廉价的显示装置，以及使用该装置的电气装置。 在像素部分和驱动电路被包含在同一绝缘表面上的显示装置中，驱动电路包括解码器100和缓冲器部分101.解码器100包括多个NAND电路，每个NAND电路包括p沟道 并联连接的TFT104〜106，以及串联连接的其他p沟道TFT107〜109。 缓冲器部分101包括多个缓冲器，每个缓冲器包括三个p沟道TFT 114至116。

公开(公告)号：US20140118378A1

公开(公告)日：2014-05-01

申请号：US14064306

申请日：2013-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Yuji Iwaki ,  Hiroyuki Miyake ,  Toru Tanabe

IPC: G09G5/393

CPC classification number: G09G5/00 ,  G09G3/3648 ,  G09G5/36 ,  G09G2320/0247 ,  G09G2320/0613 ,  G09G2320/103 ,  G09G2340/0428 ,  G09G2340/0435 ,  G09G2340/14 ,  G09G2360/16

Abstract: A novel method for driving a display device in which generation of flickers caused by rewriting pixels is reduced and which has a high aperture ratio is provided. The driving method includes a first step of determining whether displayed still image data is two-valued still image data or multivalued still image data, and a second step of performing display by rewriting (refreshing) the two-valued still image data with lower frequency than the multivalued still image data.

Abstract translation: 提供了一种用于驱动显示装置的新颖方法，其中由重写像素引起的闪烁的产生被减少并且具有高的开口率。 驱动方法包括：确定显示的静止图像数据是否是二值静止图像数据还是多值静止图像数据的第一步骤，以及通过重新（刷新）低频率的二值静止图像数据来执行显示的第二步骤 多值静止图像数据。