公开(公告)号：US20240371912A1

公开(公告)日：2024-11-07

申请号：US18263566

申请日：2022-02-22

Applicant: The Regents of the University of California

Inventor： Panpan Li ,  Hongjian Li ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

公开(公告)号：US20240266165A1

公开(公告)日：2024-08-08

申请号：US18567162

申请日：2022-06-03

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02

CPC classification number: H01L21/02334 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

Abstract: A III-V or II-VI compound based device is fabricated having one or more layers with an in-plane lattice constant or strain that is at least 20% biaxially relaxed, preferably more than 20% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed. A III-V or II-VI compound based decomposition stop layer is created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, and a temperature increase decomposes the III-V or II-VI compound based decomposition layer. A III-V or II-VI compound based device structure is grown on or above the III-V or II-VI compound based decomposition stop layer.

公开(公告)号：US20230268462A1

公开(公告)日：2023-08-24

申请号：US18014541

申请日：2021-07-09

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/0753 ,  H01L33/007

Abstract: A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.

公开(公告)号：US20230006426A1

公开(公告)日：2023-01-05

申请号：US17801612

申请日：2021-02-17

Applicant: The Regents of the University of California

Inventor： Daniel A. Cohen ,  Daniel Myers ,  Claude C. A. Weisbuch ,  Steven P. DenBaars

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/028

Abstract: A Group-III nitride light emitting device that utilizes scattering of hot carriers generated by Auger recombination from an externally electrically-driven, relatively narrow band gap carrier generation region into a relatively wide band gap carrier recombination region, such that the relatively wide band gap carrier recombination region of the Group-III nitride light emitting device is internally electrically injected by the hot carriers generated in the externally electrically-injected relatively narrow band gap carrier generation region. The device is used for generation of incoherent light (a light-emitting diode) or coherent light (a laser diode).

公开(公告)号：US11286419B2

公开(公告)日：2022-03-29

申请号：US16320295

申请日：2017-07-31

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Clayton J. Cozzan ,  Steven P. DenBaars ,  Ram Seshadri

IPC: C09K11/02 ,  F21K9/64 ,  F21K9/68 ,  C04B35/10 ,  C04B35/44 ,  C04B35/645 ,  C09K11/77 ,  C04B35/117 ,  H01L33/50 ,  H05B33/20 ,  H01L31/055 ,  H05B33/14 ,  F21Y115/30 ,  F21Y115/10

Abstract: A method for fabricating a composite useful in a white light emitting device, includes mixing a phosphor and a filler to form a mixture; sintering the mixture (e.g., using spark plasma sintering) to form a composite; and annealing the composite to reduce oxygen vacancies and improve optical properties of the composite. Also disclosed is a white light emitting device including a laser diode or light emitting diode optically pumping the phosphor in the composite to produce white light. The composite fabricated using the method (and having. e.g., at most 50% phosphor by weight) can (1) reduce an operating temperature of the phosphor by 55 degrees, (2) increase an external quantum efficiency (e.g., by at least 15%) of the white light emitting device, and (3) result in color points and quality of the white light that is equal to or improved, as compared to without the filler.

公开(公告)号：US11164997B2

公开(公告)日：2021-11-02

申请号：US16320924

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01S5/343

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

公开(公告)号：US20210193871A1

公开(公告)日：2021-06-24

申请号：US16757920

申请日：2018-10-31

Applicant: The Regents of the University of California

Inventor： Matthew S. Wong ,  David Hwang ,  Abdullah Alhassan ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/14 ,  H01L33/44

Abstract: A reduction in leakage current and an increase in efficiency of III-nitride LEDs is obtained by sidewall passivation using atomic layer deposition of a dielectric. Atomic layer deposition is a hydrogen-free deposition method, which avoids problems associated with the effects of hydrogen on passivation and transparency.

公开(公告)号：US10593854B1

公开(公告)日：2020-03-17

申请号：US16570754

申请日：2019-09-13

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/58 ,  G02B19/00 ,  H01L33/22 ,  H01L33/60 ,  H01L33/38

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

公开(公告)号：US20180152004A1

公开(公告)日：2018-05-31

申请号：US15880999

申请日：2018-01-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/343 ,  H01L31/036

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：US20180013035A1

公开(公告)日：2018-01-11

申请号：US15698181

申请日：2017-09-07

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/00 ,  H01S5/343 ,  H01L21/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.