公开(公告)号：US07873088B2

公开(公告)日：2011-01-18

申请号：US12779769

申请日：2010-05-13

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Fumitake Nakanishi

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Fumitake Nakanishi

IPC分类号： H01S5/00

CPC分类号： H01L21/0242 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333

摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

摘要翻译： 发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。 半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。 相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

公开(公告)号：US07667298B2

公开(公告)日：2010-02-23

申请号：US12292534

申请日：2008-11-20

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： H01L29/207 ,  H01L21/205

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing crystal. Otherwise, oxygen is doped into the crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases to the C-plane seed crystal or the foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the crystal and allowing oxygen to infiltrate via the non-C-plane facets to the crystal.

摘要翻译： 通过制备非C面氮化镓晶种，向晶种供应材料气体，在晶种上生长非C面氮化镓晶体并允许氧经由 非C平面到生长晶体。 否则，通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到晶体中，将材料气体供应到C面晶种或外来晶种，生长出一个刻面C 在晶种上具有非C面的平面的平面氮化镓晶体，保持晶体上的刻面，并允许氧经由非C面刻面渗入晶体。

公开(公告)号：US20090148704A1

公开(公告)日：2009-06-11

申请号：US12330904

申请日：2008-12-09

申请人： Eiryo TAKASUKA ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

发明人： Eiryo TAKASUKA ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

IPC分类号： B32B9/04 ,  C23C16/455 ,  C23C16/06 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4401 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45565 ,  C30B25/165 ,  C30B29/403 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  Y10T428/31504

摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

摘要翻译： 获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。 气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室 ）。 处理室允许反应气体在其中流动。 多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。 气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。

公开(公告)号：US20090108407A1

公开(公告)日：2009-04-30

申请号：US12292534

申请日：2008-11-20

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： H01L21/20 ,  H01B1/02 ,  H01L29/207

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal.Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.

摘要翻译： 可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面 在非C面氮化镓晶种上形成氮化镓晶体，并允许氧通过非C面表面渗入生长的氮化镓晶体。 否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种 晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过 非C面面到氮化镓晶体。

公开(公告)号：US20080029783A1

公开(公告)日：2008-02-07

申请号：US11498155

申请日：2006-08-03

申请人： Masaki Ueno

发明人： Masaki Ueno

IPC分类号： H01L31/00

CPC分类号： H01L29/34 ,  C30B25/18 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L33/16 ,  Y10T83/04

摘要： A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a mirror polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.

摘要翻译： 制造单晶氮化镓衬底的方法是将单晶氮化镓锭沿着预定平面切割以制造一个或多个单晶氮化镓衬底的步骤。 单晶氮化镓锭通过气相外延沿预定轴线的方向生长。 每个预定平面相对于预定轴线倾斜。 每个基板具有镜面抛光的主表面。 主表面具有第一区域和第二区域。 第一区域位于衬底的边缘和距离边缘3毫米的线之间。 第一个区域围绕第二个区域。 垂直于主表面的轴与衬底的c轴形成偏角。 偏角在主表面的第一区域中的第一位置处具有最小值。

公开(公告)号：US07125044B2

公开(公告)日：2006-10-24

申请号：US11114866

申请日：2005-04-26

申请人： Kazuyoshi Nishijima ,  Tetsuji Endo ,  Kazuhiro Kaneko ,  Toshiyuki Sugiyama ,  Mikio Ochiai ,  Yoshinori Goto ,  Masaki Ueno ,  Masahito Ishizuka

发明人： Kazuyoshi Nishijima ,  Tetsuji Endo ,  Kazuhiro Kaneko ,  Toshiyuki Sugiyama ,  Mikio Ochiai ,  Yoshinori Goto ,  Masaki Ueno ,  Masahito Ishizuka

IPC分类号： B60R21/16

CPC分类号： B60R21/237 ,  B60R21/217 ,  B60R2021/2375

摘要： An air bag is unfolded on a planar surface and is inflated with air. The air bag is loosely sandwiched between the upper and lower blades that are arranged in a radial configuration. Movable blocks progress toward the center to fold the upper and lower panels of the air bag against the central part of the air bag. The resulting central folded part of the air bag has a wave-like configuration, and the upper and lower panels are separated from each other. The ear-like portions of the air bag are wound around the central folded part of the air bag that is folded in a wave-like configuration. Then, the central part of the air bag is pressed downward to complete the folding process. Gas can be supplied smoothly from the inlet port to the periphery when the air bag is reinflated. The method for folding the air bag is simple, and the air bag can be inflated quickly.

公开(公告)号：US06994664B2

公开(公告)日：2006-02-07

申请号：US10257416

申请日：2001-04-11

申请人： Kazuyoshi Nishijima ,  Tetsuji Endo ,  Kazuhiro Kaneko ,  Toshiyuki Sugiyama ,  Mikio Ochiai ,  Yoshinori Goto ,  Masaki Ueno ,  Masahito Ishizuka

发明人： Kazuyoshi Nishijima ,  Tetsuji Endo ,  Kazuhiro Kaneko ,  Toshiyuki Sugiyama ,  Mikio Ochiai ,  Yoshinori Goto ,  Masaki Ueno ,  Masahito Ishizuka

IPC分类号： B31F1/00

CPC分类号： B60R21/237 ,  B60R21/217 ,  B60R2021/2375

摘要： An air bag is unfolded on a planar surface and is inflated with air. The air bag is loosely sandwiched between the upper and lower blades that are arranged in a radial configuration. Movable blocks progress toward the center to fold the upper and lower panels of the air bag against the central part of the air bag. The resulting central folded part of the air bag has a wave-like configuration, and the upper and lower panels are separated from each other. The ear-like portions of the air bag are wound around the central folded part of the air bag that is folded in a wave-like configuration. Then, the central part of the air bag is pressed downward to complete the folding process. Gas can be supplied smoothly from the inlet port to the periphery when the air bag is reinflated. The method for folding the air bag is simple, and the air bag can be inflated quickly.

摘要翻译： 气囊在平面上展开并用空气充气。 安全气囊松散地夹在被布置成径向构型的上下刀片之间。 可移动块朝向中心前进，将气囊的上下面板抵靠气囊的中心部分折叠。 所得到的气囊的中央折叠部分具有波状构造，并且上下面板彼此分离。 安全气囊的耳状部分缠绕在折叠成波状构造的气囊的中央折叠部分上。 然后，将气囊的中央部分向下压，完成折叠过程。 当气囊被重新充气时，气体可以从入口平滑地供应到周边。 折叠气囊的方法简单，气囊可以快速充气。

公开(公告)号：US06935099B2

公开(公告)日：2005-08-30

申请号：US10484817

申请日：2002-08-23

申请人： Yasuyuki Miyahara ,  Masahiro Sato ,  Masaki Ueno ,  Kenichi Ohmori

发明人： Yasuyuki Miyahara ,  Masahiro Sato ,  Masaki Ueno ,  Kenichi Ohmori

IPC分类号： F01N3/08 ,  F01N11/00 ,  F01N3/00

CPC分类号： F01N3/0835 ,  F01N3/0807 ,  F01N11/00 ,  F01N2550/03 ,  F01N2560/028 ,  F01N2570/12 ,  Y02T10/20 ,  Y02T10/47

摘要： After an engine 1 has started to operate, a state in which a humidity represented by an output of a humidity sensor 19 downstream of a hydrocarbon adsorbent 7 takes a minimum value is sequentially searched for, and a timing at which the humidity changes from the minimum value to a monotonously increasing state is grasped as a timing at which the adsorption of moisture and hydrocarbons by the hydrocarbon adsorbent 7 is saturated. After the engine has started to operate, a parameter representing an integrated amount of moisture given to the hydrocarbon adsorbent 7 by the exhaust gas is sequentially generated, and a deteriorated state of the hydrocarbon adsorbent 7 is evaluated based on the value of the parameter at the timing at which the adsorption is saturated. The deteriorated state of the hydrocarbon absorbent can thus accurately be evaluated by an inexpensive arrangement which employs the humidity sensor 19 disposed downstream of the hydrocarbon adsorbent 7.

摘要翻译： 在发动机1开始运行之后，依次搜索由碳氢化合物吸附剂7下游的湿度传感器19的输出表示的湿度为最小值的状态，以及湿度从最小值变化的时刻 将作为单一增加状态的值作为将烃类吸附剂7吸收水分和烃类饱和的时刻进行掌握。 在发动机开始运转之后，依次产生表示通过废气赋予烃类吸附剂7的一体化的水分量的参数，根据该吸附剂7的参数值，评价烃吸附剂7的劣化状态 吸附饱和的时间。 因此，可以通过使用设置在烃吸附剂7的下游的湿度传感器19的廉价的装置来精确地评价烃类吸收剂的劣化状态。

公开(公告)号：US20050133010A1

公开(公告)日：2005-06-23

申请号：US11001006

申请日：2004-12-02

申请人： Katsuichi Yagisawa ,  Katsunori Komuro ,  Yasuaki Nagai ,  Toshikazu Saito ,  Masaki Ueno ,  Minoru Ueda

发明人： Katsuichi Yagisawa ,  Katsunori Komuro ,  Yasuaki Nagai ,  Toshikazu Saito ,  Masaki Ueno ,  Minoru Ueda

IPC分类号： F02M55/02 ,  B62J37/00 ,  F02B61/02 ,  F02D33/00 ,  F02M37/00 ,  F16L3/12 ,  F16L3/127 ,  F16L3/16 ,  F16L9/147 ,  F16L11/06 ,  F16L11/12 ,  F16L33/00 ,  F16L33/28 ,  F16L37/098 ,  F16L37/12 ,  F16L58/10

CPC分类号： F02D33/006 ,  B62J37/00 ,  F02B61/02 ,  F02M37/007 ,  F16L3/127 ,  F16L3/16 ,  F16L9/147 ,  F16L11/12 ,  F16L37/0987 ,  F16L58/1054 ,  F16L2011/047

摘要： To manufacture fuel piping for connecting a fuel tank and a drive unit including an engine using a resin material at a low cost and to cause the fuel piping to suitably follow the movement of the fuel tank and the drive unit when the vehicle is being operated. A fuel piping includes connectors at both ends of a pipe member formed of resin material into a thin tubular shape for connecting between a fuel tank and a fuel injection apparatus for supplying fuel to an engine of a two-wheel vehicle or the like via the connectors. One or more bent portions are formed at the midsection of the pipe member of the fuel piping.

摘要翻译： 为了制造燃料管道，用于以低成本连接燃料箱和包括使用树脂材料的发动机的驱动单元，并且使得燃料管道在车辆运行时适当地跟随燃料箱和驱动单元的运动。 燃料管道包括由树脂材料形成的管状构件的两端的连接器，形成为薄的管状，用于连接燃料箱和燃料喷射装置，用于通过连接器向两轮车辆等的发动机供应燃料 。 一个或多个弯曲部分形成在燃料管道的管构件的中部。

公开(公告)号：US20050095861A1

公开(公告)日：2005-05-05

申请号：US10997887

申请日：2004-11-29

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11，在至少含有NH 3的混合气体气氛中，在至少1020℃的衬底温度下，经过热处理至少10分钟的抛光表面， 3气体。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。