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    METHOD FOR MAKING A SUSPENDED PART OF A MICROELECTRONIC AND/OR NANOELECTRONIC STRUCTURE IN A MONOLITHIC PART OF A SUBSTRATE
    114.
    发明申请
    METHOD FOR MAKING A SUSPENDED PART OF A MICROELECTRONIC AND/OR NANOELECTRONIC STRUCTURE IN A MONOLITHIC PART OF A SUBSTRATE 有权
    在基板的单片部分制造微电子和/或纳米电子结构的悬挂部分的方法

    公开(公告)号：US20140357006A1

    公开(公告)日：2014-12-04

    申请号：US14286175

    申请日：2014-05-23

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    Inventor： Sofiane BEN MBAREK ,  Sophie Giroud ,  Frederic-Xavier Gaillard

    IPC: B81C1/00

    CPC classification number: B81C1/00531 ,  B81B2203/0118 ,  B81C1/0015 ,  B81C1/00539 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/019 ,  B81C2203/036

    Abstract: Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: make a first etching with a first given depth in the monolithic substrate to define the suspended part, deposit a protective layer on at least the side edges of the first etching, make a second etching with a second depth in the first etching, make a physicochemical treatment of at least part of the zone located under the suspended structure so as to modify it, and release the suspended part by removal of the physicochemically treated part.

    Abstract translation: 用于从第一衬底的整体部分制造微电子或纳米电子结构的至少一个第一悬浮部分的方法，所述方法包括以下步骤：在所述整体式衬底中进行第一给定深度的第一蚀刻以限定所述悬浮部分， 在第一蚀刻的至少侧边缘上沉积保护层，在第一蚀刻中进行具有第二深度的第二蚀刻，对位于悬挂结构下方的区域的至少一部分进行物理化学处理，以进行改性， 并通过去除物理化学处理的部分释放悬浮的部分。

    Formation Of Nanoporous Materials
    118.
    发明申请
    Formation Of Nanoporous Materials 审中-公开
    纳米材料的形成

    公开(公告)号：US20110253544A1

    公开(公告)日：2011-10-20

    申请号：US13133378

    申请日：2009-12-08

    Applicant: Dusan Losic

    Inventor： Dusan Losic

    IPC: C25D5/18 ,  C25D11/02 ,  C25D21/12 ,  B82Y30/00 ,  B82Y40/00

    CPC classification number: C25D1/08 ,  B81C1/00047 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25D1/00 ,  C25D1/006 ,  C25D11/02 ,  C25D11/045

    Abstract: A process for forming a porous metal oxide or metalloid oxide material, the process including: providing an anodic substrate including a metal or metalloid substrate; providing a cathodic substrate; contacting the anodic substrate and the cathodic substrate with an acid electrolyte to form an electrochemical cell; applying an electrical signal to the electrochemical cell; and forming shaped pores in the metal or metalloid substrate by: (c) time varying the applied voltage of the electrical signal to provide a voltage cycle having a minimum voltage period during which a minimum voltage is applied, a maximum voltage period during which a maximum voltage is applied, and a transition period between the minimum voltage period and the maximum voltage period, wherein the voltage is progressively increased from the minimum voltage to the maximum voltage during the transition period, or (d) time varying the current of the electrical signal to provide a current cycle having a minimum current period during which a minimum current is applied, a maximum current period during which a maximum current is applied, and a transition period between the minimum current period and the maximum current period, wherein the voltage is progressively increased from the minimum current to the maximum current during the transition period.

    Abstract translation: 一种形成多孔金属氧化物或准金属氧化物材料的方法，该方法包括：提供包含金属或准金属基质的阳极底物; 提供阴极底物; 使阳极底物和阴极底物与酸性电解质接触以形成电化学电池; 向电化学电池施加电信号; 以及通过以下步骤在所述金属或准金属基体中形成成形孔：（c）对所述电信号的施加电压进行时变，以提供具有施加最小电压的最小电压周期的电压周期，其中最大电压周期 施加电压，以及在最小电压周期和最大电压周期之间的过渡期间，其中电压在过渡期间从最小电压逐渐增加到最大电压，或（d）时变电流信号的电流 以提供具有施加最小电流的最小电流周期，施加最大电流的最大电流周期以及最小电流周期与最大电流周期之间的转变周期的电流周期，其中电压逐渐变化 在过渡期间从最小电流增加到最大电流。

    Apparatus and method for converting energy
    119.
    发明授权
    Apparatus and method for converting energy 有权
    用于转换能量的装置和方法

    公开(公告)号：US07936112B2

    公开(公告)日：2011-05-03

    申请号：US12372369

    申请日：2009-02-17

    Applicant: Jaeyoung Choi ,  Jongmin Kim ,  Sang Yoon Lee

    Inventor： Jaeyoung Choi ,  Jongmin Kim ,  Sang Yoon Lee

    IPC: H01L41/107

    CPC classification number: H02N2/18 ,  B81B2201/038 ,  B81B2203/0376 ,  B81C1/00103 ,  B81C2201/0115

    Abstract: Exemplary embodiments relate to an energy converting apparatus and a method for converting energy, which may convert energy of an applied signal into electrical energy. The energy converting apparatus may include at least one nanowire which resonates in response to the applied signal. The resonating nanowire may contact an electrode allowing a current to flow through the electrode and the nanowire by a Schottky contact between the electrode and the nanowire. The method for converting energy may include applying a signal to at least one nanowire to resonate the nanowire, and generating electrical energy through the contact between the resonating nanowire and an electrode.

    Abstract translation: 示例性实施例涉及能量转换装置和用于转换能量的方法，其可以将施加的信号的能量转换成电能。 能量转换装置可以包括响应于所施加的信号而谐振的至少一个纳米线。 谐振纳米线可以接触允许电流通过电极和纳米线之间的肖特基接触流过电极和纳米线的电极。 用于转换能量的方法可以包括将信号施加到至少一个纳米线以共振纳米线，以及通过谐振纳米线和电极之间的接触产生电能。

    Method of fabricating a MEMS/NEMS electromechanical component
    120.
    发明授权
    Method of fabricating a MEMS/NEMS electromechanical component 有权
    制造MEMS / NEMS机电元件的方法

    公开(公告)号：US07906439B2

    公开(公告)日：2011-03-15

    申请号：US12488898

    申请日：2009-06-22

    Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00507 ,  B81B2201/0271 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0177 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H9/175 ,  H03H9/2436 ,  Y10S438/933

    Abstract: The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.

    Abstract translation: 本发明提供一种在至少一个基板上具有有源元件的制造方法和机电装置，该方法具有以下步骤：a）制造具有第一部分，界面层和第二部分的非均相基底，第一部分 包括夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，第一区域延伸到第一部分的表面，第二区域延伸到界面层，至少一个所述掩埋区域 至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地具有攻击性; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区域的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述腔和所述界面层之间的第二区域的至少一部分; 其中所述基板的第一和第二部分分别由通过粘接而组装在一起的第一和第二基板构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

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