摘要:
A cable modem includes an amplifier, a power module, a switch circuit, a monitor signal, a duplexer and a RF matching circuit. The switch includes a PMOS transistor and a first electronic switch. The RF matching circuit included a second electronic switch and an electronic matching device. The monitoring signal source is configured for outputting a control signal. When the monitoring signal source stops outputting the control signal, both the first electronic switch and the PMOS transistor are turned off to cut off the power to the amplifier, the second electronic switch is turned on, and conducts the RF signal received by the signal receiving/transmitting circuit to the duplexer which further conducts the RF signal to the radio frequency matching circuit.
摘要:
A regulator with decreased leakage and low loss for a power amplifier is described. Switching circuitry is used to connect the regulator input bias to a bias control voltage when the power amplifier is to be operated in an on condition or to a voltage generator when the power amplifier is to be operated in an off condition.
摘要:
A power supply circuit includes a first voltage regulator to generate a first supply voltage for a first circuit of a phase-locked loop and a second voltage regulator to generate a second supply voltage for a second circuit of the phase-locked loop. The first and second supply voltages are independently generated by the first and second voltage regulators based on the same reference signal. The first circuit may be a charge pump and the second circuit may be a voltage-controlled oscillator. Different circuits may be supplied with the independently generated supply voltages in alternative embodiments.
摘要:
To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than null of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal. Further, when the transistor constituting the amplifying circuit B is brought into a nonoperational state and the switching circuit is made OFF, a high frequency signal of high power is outputted from the amplifying circuit A and when the transistor constituting the amplifying circuit A is brought into a nonoperational state and the switching circuit is made ON, a high frequency signal of low power is outputted from the amplifying circuit B.
摘要:
Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
摘要:
A transmission chain receives an incident signal to be transmitted having a first power and a first bandwidth. A first modulator frequency shifts a first signal derived from the incident signal to generate a first shifted signal at a modulation output. A power amplifier coupled to the modulation output amplifies an intermediate signal to generate an amplified output signal. A predistortion-signal-generating circuit generates, from the incident signal and from the amplified output signal in a second bandwidth that is larger than the first bandwidth, a predistortion signal having a second power lower than the first power. A second modulator frequency shifts a second signal derived from the predistortion signal to generate a second shifted signal for combination with the first shifted signal at said modulation output to produce the intermediate signal.
摘要:
A power amplifier module includes a driver transistor having first, second, and third terminals, a radio-frequency input port coupled to the first terminal of the driver transistor, a cascode transistor having first, second, and third terminals, the second terminal of the cascode transistor being coupled to the third terminal of the driver transistor, a radio-frequency output port coupled to the second terminal of the cascode transistor, and a coupling path connecting the first terminal of the cascode transistor to the third terminal of the cascode transistor, the coupling path including a capacitor.
摘要:
An amplifier circuit includes a converter configured to convert a predefined physical quantity to a resistance value, and the resistance value converted by the converter is converted to a voltage value and then amplified. The converter includes variable resistance sensors of piezoresistance elements. A bias unit is configured to determine a bias current of the converter, and includes bias resistances. An operation amplifier unit receives, as input signals, output signals from the bias unit and the converter, and includes feedback resistances respectively connected to input and output ends of a first operational amplifier. The first operational amplifier is a whole differential operational amplifier including a common-mode feedback circuit.
摘要:
A power amplifier module that includes a power amplifier and a controller is presented herein. The power amplifier module may include a set of transistor stages and a plurality of bias circuits. At least one transistor stage from the set of transistor stages may be in electrical communication with a first bias circuit and a second bias circuit from the plurality of bias circuits. The first bias circuit can be configured to apply a first bias voltage to the at least one transistor stage and the second bias circuit can be configured to apply a second bias voltage to the at least one transistor stage. The controller may be configured to activate one of the first bias circuit and the second bias circuit.
摘要:
Methods and devices are described for reducing receiver complexity in an RF front-end stage. In one exemplary implementation, a switch is used to connect a plurality of receive paths to a single input amplifier of a transceiver unit used the RF front-end stage. In another exemplary implementation, the switch has a tunable network which can be tuned with respect to various frequencies of operation of the receive path and associated RF signal.