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141 条记录 (耗时 0.059 秒)

    Nanostructured thin films and their uses
    123.
    发明授权
    Nanostructured thin films and their uses 有权
    纳米结构薄膜及其用途

    公开(公告)号：US07391018B2

    公开(公告)日：2008-06-24

    申请号：US11226075

    申请日：2005-09-14

    申请人： Chunming Niu ,  Robert Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    发明人： Chunming Niu ,  Robert Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    IPC分类号： H01J49/04

    CPC分类号： A61L27/303 ,  A61L31/122 ,  H01J49/0418 ,  Y10S977/701 ,  Y10T428/12736 ,  Y10T428/12743

    摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.

    摘要翻译： 本发明一般公开了在支撑衬底上使用纳米结构非硅薄膜（例如氧化铝或铝薄膜），随后用诸如硅或钨的材料的活性层涂覆。 底层的非硅材料产生增强的表面积，而活性层有助于在分析物的激光解吸附中用激光照射时，将能量并入和转移到吸附在活性层上的一种或多种分析物。 本发明提供了可以通过相对直接和廉价的制造方法制造的衬底表面，其可用于各种应用，例如质谱，疏水或亲水涂层，医疗器械应用，电子学，催化，保护，数据存储， 光学和传感器。

    Nanostructured thin films and their uses
    124.
    发明申请
    Nanostructured thin films and their uses 有权

    公开(公告)号：US20080073505A1

    公开(公告)日：2008-03-27

    申请号：US11226075

    申请日：2005-09-14

    申请人： Chunming Niu ,  Robert Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    发明人： Chunming Niu ,  Robert Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    IPC分类号： H01J49/04

    CPC分类号： A61L27/303 ,  A61L31/122 ,  H01J49/0418 ,  Y10S977/701 ,  Y10T428/12736 ,  Y10T428/12743

    摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.

    Nanowire structures comprising carbon
    125.
    发明申请
    Nanowire structures comprising carbon 有权
    包含碳的纳米线结构

    公开(公告)号：US20070212538A1

    公开(公告)日：2007-09-13

    申请号：US11601842

    申请日：2006-11-20

    申请人： Chunming Niu

    发明人： Chunming Niu

    IPC分类号： D02G3/00 ,  H01B1/04 ,  B05D7/00 ,  H01M4/58 ,  H01M4/96 ,  H01M4/88

    CPC分类号： H01B1/04 ,  H01M4/133 ,  H01M4/625 ,  H01M4/8605 ,  H01M4/8657 ,  H01M8/1004 ,  H01M8/1097 ,  Y02P70/56 ,  Y10T428/2918

    摘要： The present invention is directed to nanowire structures and interconnected nanowire networks comprising such structures, as well as methods for their production. The nanowire structures comprise a nanowire core, a carbon-based layer, and in additional embodiments, carbon-based structures such as nanographitic plates consisting of graphenes formed on the nanowire cores, interconnecting the nanowire structures in the networks. The networks are porous structures that can be formed into membranes or particles. The nanowire structures and the networks formed using them are useful in catalyst and electrode applications, including fuel cells, as well as field emission devices, support substrates and chromatographic applications.

    摘要翻译： 本发明涉及包括这种结构的纳米线结构和互连的纳米线网络，以及它们的生产方法。 纳米线结构包括纳米线芯，碳基层，并且在另外的实施方案中，碳基结构例如由形成在纳米线芯上的石墨烯组成的纳米尺度板，互连网络中的纳米线结构。 网络是可以形成膜或颗粒的多孔结构。 使用它们形成的纳米线结构和网络可用于催化剂和电极应用，包括燃料电池，以及场致发射器件，支撑衬底和色谱应用。

    Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays
    128.
    发明申请
    Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays 有权
    具有纳米功能的存储器件和各向异性电荷携带阵列

    公开(公告)号：US20070187768A1

    公开(公告)日：2007-08-16

    申请号：US11695728

    申请日：2007-04-03

    申请人： Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    发明人： Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    IPC分类号： H01L29/94

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G03G5/00 ,  G03G5/02 ,  G03G5/04 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G11C11/56 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2216/08 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7887 ,  Y10S977/774 ,  Y10S977/785 ,  Y10S977/936

    摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

    摘要翻译： 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。