-
公开(公告)号：US07755038B2
公开(公告)日：2010-07-13
申请号：US12121008
申请日：2008-05-15
IPC分类号： H01J49/04
CPC分类号： A61L27/303 , A61L31/122 , H01J49/0418 , Y10S977/701 , Y10T428/12736 , Y10T428/12743
摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.
摘要翻译： 本发明一般公开了在支撑衬底上使用纳米结构非硅薄膜（例如氧化铝或铝薄膜），随后用诸如硅或钨的材料的活性层涂覆。 底层的非硅材料产生增强的表面积，而活性层有助于在分析物的激光解吸附中用激光照射时，将能量并入和转移到吸附在活性层上的一种或多种分析物。 本发明提供了可以通过相对直接和廉价的制造方法制造的衬底表面，其可用于各种应用，例如质谱，疏水或亲水涂层，医疗器械应用，电子学，催化，保护，数据存储， 光学和传感器。
-
公开(公告)号：US07391018B2
公开(公告)日：2008-06-24
申请号：US11226075
申请日：2005-09-14
IPC分类号： H01J49/04
CPC分类号： A61L27/303 , A61L31/122 , H01J49/0418 , Y10S977/701 , Y10T428/12736 , Y10T428/12743
摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.
摘要翻译： 本发明一般公开了在支撑衬底上使用纳米结构非硅薄膜（例如氧化铝或铝薄膜），随后用诸如硅或钨的材料的活性层涂覆。 底层的非硅材料产生增强的表面积，而活性层有助于在分析物的激光解吸附中用激光照射时，将能量并入和转移到吸附在活性层上的一种或多种分析物。 本发明提供了可以通过相对直接和廉价的制造方法制造的衬底表面，其可用于各种应用，例如质谱，疏水或亲水涂层，医疗器械应用，电子学，催化，保护，数据存储， 光学和传感器。
-
公开(公告)号：US20080073505A1
公开(公告)日：2008-03-27
申请号：US11226075
申请日：2005-09-14
IPC分类号： H01J49/04
CPC分类号： A61L27/303 , A61L31/122 , H01J49/0418 , Y10S977/701 , Y10T428/12736 , Y10T428/12743
摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.
-
公开(公告)号：US07339184B2
公开(公告)日：2008-03-04
申请号：US11117707
申请日：2005-04-29
申请人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
发明人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
IPC分类号： H01L29/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。
-
公开(公告)号：US07105428B2
公开(公告)日：2006-09-12
申请号：US11117703
申请日：2005-04-29
申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
发明人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
-
公开(公告)号：US20090124034A1
公开(公告)日：2009-05-14
申请号：US12121008
申请日：2008-05-15
IPC分类号： H01L21/30
CPC分类号： A61L27/303 , A61L31/122 , H01J49/0418 , Y10S977/701 , Y10T428/12736 , Y10T428/12743
摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.
摘要翻译： 本发明一般公开了在支撑衬底上使用纳米结构非硅薄膜（例如氧化铝或铝薄膜），随后用诸如硅或钨的材料的活性层涂覆。 底层的非硅材料产生增强的表面积，而活性层有助于在分析物的激光解吸附中用激光照射时，将能量并入和转移到吸附在活性层上的一种或多种分析物。 本发明提供了可以通过相对直接和廉价的制造方法制造的衬底表面，其可用于各种应用，例如质谱，疏水或亲水涂层，医疗器械应用，电子学，催化，保护，数据存储， 光学和传感器。
-
公开(公告)号：US07273732B2
公开(公告)日：2007-09-25
申请号：US11490636
申请日：2006-07-21
申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
发明人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
IPC分类号： H01L51/40
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译： 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。
-
公开(公告)号：US07233041B2
公开(公告)日：2007-06-19
申请号：US11490637
申请日：2006-07-21
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号：US07064372B2
公开(公告)日：2006-06-20
申请号：US11004380
申请日：2004-12-03
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94 , H01L29/76
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号：US07135728B2
公开(公告)日：2006-11-14
申请号：US11106340
申请日：2005-04-13
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
-
-
-
-
-
-
-
-
搜索结果
27 条记录 (耗时 0.031 秒)