Abstract:
A method of producing an induced pluripotent stem cell, comprising the step of introducing at least one kind of non-viral expression vector incorporating at least one gene that encodes a reprogramming factor into a somatic cell. In some embodiments, the gene that encodes a reprogramming factor is one or more kind of genes selected from the group consisting of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and the Nanog gene.
Abstract:
X-ray CT apparatus is provided in which the photon energy distribution of X-rays to be radiated is flattened. X-ray CT apparatus includes an X-ray tube, a detector, a data acquisition system, a tube voltage generator, and a grid controller. The X-ray tube radiates X-rays onto a subject. The detector includes multiple detection elements for detecting photons forming the X-rays. The data acquisition system counts the number of the detected photons to acquire projection data based on the counted photons. The tube voltage generator applies the tube voltage to the X-ray tube while changing the tube voltage of the X-ray tube in a predetermined cycle. A tube current controller decreases the tube current upon an increase in the tube voltage, and increases the tube current upon a decrease in the tube voltage. Thus, the photon energy distribution of the X-rays radiated from the X-ray tube is flattened.
Abstract:
Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
Abstract:
The system described herein relates to a high-voltage supply unit for providing an output voltage for a particle beam apparatus, wherein the particle beam apparatus is embodied as, for example, an electron beam apparatus and/or an ion beam apparatus. The system described herein is based on the fact that it was recognized that a bipolar voltage supply unit can be formed by means of a unipolar first current source and a unipolar second current source, said bipolar voltage supply unit enabling a load current in two directions. The high-voltage supply unit according to the system described herein can be operated in the 4-quadrant operation. In the 4-quadrant operation, a first voltage source for supplying the first current source and a second voltage source for supplying the second current source are embodied as different voltage sources.
Abstract:
A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.
Abstract:
A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image. The operation part judges appropriateness/inappropriateness of the first acceleration voltage with the use of the information indicating the relationship and the brightness ratio in the image.
Abstract:
This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.
Abstract:
Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.
Abstract:
The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.
Abstract:
The invention relates to a system for generating an ion stream which may be useful for various applications. In one application, the ion stream may be used to excite nano-spheres. In another application, the ion stream may be used for sterilization and therapy in accordance with the teachings of the invention.