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    Process chamber having improved temperature control
    142.
    发明授权
    Process chamber having improved temperature control 失效
    处理室具有改进的温度控制

    公开(公告)号：US06440221B2

    公开(公告)日：2002-08-27

    申请号：US09082430

    申请日：1998-05-20

    Applicant: Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

    Inventor： Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

    IPC: C23C1600

    CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/6831

    Abstract: A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.

    Abstract translation: 温度控制系统145用于在半导体衬底70的加工期间控制处理室25的温度。温度控制系统145包括用于从腔室25除去热量的热交换器板155和用于 向热交换器板155传导热量。传热构件158包括结合到室25的外表面的下导热表面205和热耦合到热交换器板155的上传热表面210.优选地， 温度控制组件包括用于加热室25的加热器150和用于调节由热交换器板155移除的热量的计算机控制系统165以及由加热器150供应的热量，以将室25保持在基本均匀的温度 。

    Externally excited torroidal plasma source
    143.
    发明授权
    Externally excited torroidal plasma source 失效
    外部激发环形等离子体源

    公开(公告)号：US06348126B1

    公开(公告)日：2002-02-19

    申请号：US09636699

    申请日：2000-08-11

    Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

    Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

    IPC: H01L2100

    CPC classification number: H01J37/321 ,  H01J37/32082

    Abstract: A plasma reactor for processing a workpiece includes a chamber adapted to accept processing gases in an evacuated environment including a workpiece support, a hollow conduit defining a wall of the chamber, and having respective ends opening adjacent opposite sides of the workpiece support, and a chamber wall portion in facing relationship to the workpiece support and defining a workpiece processing zone therebetween, the processing zone and the interior of the conduit forming a torroidal interior path, and an RF energy applicator irradiating gas within the chamber to maintain a plasma within the torroidal interior path.

    Abstract translation: 一种用于加工工件的等离子体反应器包括适于在真空环境中接受处理气体的室，包括工件支撑件，限定室壁的中空导管，并且具有邻近工件支撑件的相对侧面打开的相应端部，以及室 壁部分与工件支撑件形成面对关系并且在它们之间限定工件加工区域，处理区域和管道内部形成环形内部路径，以及RF能量施加器照射室内的气体以将等离子体维持在环形内部 路径。

    Scavenging fluorine in a planar inductively coupled plasma reactor
    144.
    发明授权
    Scavenging fluorine in a planar inductively coupled plasma reactor 失效
    在平面感应耦合等离子体反应器中清除氟

    公开(公告)号：US06217785B1

    公开(公告)日：2001-04-17

    申请号：US08762464

    申请日：1996-12-09

    Applicant: Kenneth S. Collins ,  Jeffrey Marks

    Inventor： Kenneth S. Collins ,  Jeffrey Marks

    IPC: H05H100

    CPC classification number: H01J37/32871 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

    Abstract translation: 在一种用于制造电磁耦合平面等离子体的装置中，包括在其壁中具有介电屏蔽的腔室和在所述腔室外面的平面线圈，并且与耦合到射频源的所述窗口相邻，其中安装有用于氟的清除剂的改进 进入或添加到所述室中。 当用氟烃气体的等离子体蚀刻氧化硅时，氟清除剂减少游离氟自由基，从而提高蚀刻的选择性和各向异性，并且在减少颗粒形成的同时提高蚀刻速率。

    Method of processing a wafer within a reaction chamber
    145.
    发明授权
    Method of processing a wafer within a reaction chamber 失效
    在反应室内处理晶片的方法

    公开(公告)号：US5874361A

    公开(公告)日：1999-02-23

    申请号：US736456

    申请日：1996-10-24

    Applicant: Kenneth S. Collins ,  Douglas Buchberger

    Inventor： Kenneth S. Collins ,  Douglas Buchberger

    IPC: H01L21/683 ,  H02N13/00 ,  H04L21/00

    CPC classification number: H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    Abstract: A method of dechucking a workpiece from an electrostatic chuck. The method adaptively produces a dechucking voltage for canceling any unpredictable residual electrostatic fields between a workpiece and the electrostatic chuck. The method contains the steps of (a) applying a lifting force to the workpiece; (b) altering the chucking voltage; (c) measuring the lifting force; (d) comparing the measured lifting force to a threshold level; and, depending on the result of the comparison, either (e) maintaining the chucking voltage at its present level for a predefined period of time and physically dechucking the workpiece or (f) repeating steps (b), (c), (d) and (e).

    Abstract translation: 一种从静电吸盘去除工件的方法。 该方法自适应地产生用于消除工件和静电卡盘之间的任何不可预测的残余静电场的解扣电压。 该方法包括以下步骤：（a）将提升力施加到工件; （b）改变夹紧电压; （c）测量提升力; （d）将测量的提升力与阈值水平进行比较; （e）根据比较结果，（e）将夹持电压保持在其当前水平一段预定的时间段，并将工件物理地脱扣，或（f）重复步骤（b），（c），（d） 和（e）。

    Electrostatic chuck usable in high density plasma
    147.
    发明授权
    Electrostatic chuck usable in high density plasma 失效
    静电吸盘可用于高密度等离子体

    公开(公告)号：US5583737A

    公开(公告)日：1996-12-10

    申请号：US452351

    申请日：1995-05-26

    Applicant: Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    Inventor： Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC classification number: H01L21/6833 ,  H01L21/6831

    Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

    Abstract translation: 一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。 电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。 第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。 与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。 当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

    Isolated electrostatic chuck and excitation method
    149.
    发明授权
    Isolated electrostatic chuck and excitation method 失效
    隔离静电卡盘和激励方法

    公开(公告)号：US5315473A

    公开(公告)日：1994-05-24

    申请号：US823280

    申请日：1992-01-21

    Applicant: Kenneth S. Collins ,  Edward A. Gritters

    Inventor： Kenneth S. Collins ,  Edward A. Gritters

    IPC: B23Q3/15 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC classification number: H01L21/6831 ,  H01L21/6833

    Abstract: An electrostatic clamp or chuck and method uses soft square wave, slew rate limited, A.C. clamping voltages and a balanced, differential drive for clamping flat articles such as semiconductor wafers to pedestals, wafer transfer blades, and the like, with a large ratio of clamping force to clamping voltage, reduced decay of the clamping force and associated nearly constant maximum clamping force, instantaneous elimination of remnant clamping force when the clamping voltage is removed (instant off operation), isolation of the clamped article from the clamping voltage, and substantial elimination of vibration. Preferably the A.C. frequency is 0.1 to 60 Hz. The instant off operation is enhanced by increasing the frequency as the clamping voltage is decreased.

    Abstract translation: 静电夹钳或卡盘和方法使用软方波，压摆率限制，交流钳位电压和平衡差动驱动器，用于将诸如半导体晶片的扁平制品夹紧到基座，晶片转移叶片等，具有较大的夹紧比 强制夹紧电压，减少夹紧力的衰减和相关的几乎恒定的最大夹紧力，当夹紧电压消除（瞬间关闭操作）时，瞬时消除剩余夹紧力，夹紧物品与钳位电压的隔离以及显着消除 的振动。 优选地，交流频率为0.1至60Hz。 当钳位电压降低时，通过增加频率来增强瞬时关断操作。

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