公开(公告)号：US08022477B2

公开(公告)日：2011-09-20

申请号：US12071411

申请日：2008-02-21

申请人： Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

发明人： Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

IPC分类号： H01L29/66

CPC分类号： H01L29/7817 ,  H01L27/0738 ,  H01L29/0696 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/435 ,  H01L29/4933 ,  H01L29/7824 ,  H01L29/7835

摘要： A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.

摘要翻译： 半导体装置包括：半导体衬底; 以及设置在半导体衬底的表面部分上的横向型MIS晶体管。 横向型MIS晶体管包括：与横向型MIS晶体管的栅极耦合的线; 该多晶硅电阻器设置在该线路中，并且具有与横向型MIS晶体管的漏极相反的导电类型; 以及绝缘层，横向型MIS晶体管的漏极电压通过该绝缘层施加到多晶硅电阻器。

公开(公告)号：US20110147859A1

公开(公告)日：2011-06-23

申请号：US12968470

申请日：2010-12-15

申请人： Masaya TANAKA ,  Tetsuo Fujii

发明人： Masaya TANAKA ,  Tetsuo Fujii

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： H01L23/498 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2207/095 ,  B81C2203/0118 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76898 ,  H01L21/84 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L27/1203 ,  H01L2224/04042 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.

摘要翻译： 半导体器件包括由硅制成的基底衬底，帽基底和具有金属部分的引导电极。 基底基板具有在其表面层的预定部分彼此绝缘和分离的基底半导体区域。 盖基板结合到基底基板的表面层的预定部分。 引导电极具有连接到基底衬底的多个基底半导体区域中的一个的第一端并且延伸穿过帽衬底，使得引导电极的第二端邻近盖衬底的表面定位，以允许电气 与外部部分的连接，该表面与基底基底和盖基底接合的接合表面相对。 引导电极在其外表面和盖基板之间限定凹槽。

公开(公告)号：US07950288B2

公开(公告)日：2011-05-31

申请号：US12385225

申请日：2009-04-02

申请人： Tetsuo Fujii ,  Eishi Kawasaki

发明人： Tetsuo Fujii ,  Eishi Kawasaki

IPC分类号： G01R27/26

CPC分类号： G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。

公开(公告)号：US07901967B2

公开(公告)日：2011-03-08

申请号：US11600136

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

摘要翻译： 一种用于切割半导体衬底的方法包括：通过在衬底上照射激光束在衬底中形成重整层; 与切割线一起在基板上形成凹槽; 并向基板施加力以切割重整层处的基板作为切割的起点。 槽具有预定的深度，使得槽设置在重整层附近，并且该力在槽处提供应力。

公开(公告)号：US20100307246A1

公开(公告)日：2010-12-09

申请号：US12801405

申请日：2010-06-08

申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

IPC分类号： G01P15/00 ,  H01L21/02 ,  H01L29/84

CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。

公开(公告)号：US07838331B2

公开(公告)日：2010-11-23

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US07821085B2

公开(公告)日：2010-10-26

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US20100264411A1

公开(公告)日：2010-10-21

申请号：US12086882

申请日：2006-12-19

申请人： Tetsuo Fujii ,  Tetsuhiro Tanabe

发明人： Tetsuo Fujii ,  Tetsuhiro Tanabe

IPC分类号： H01L33/36

CPC分类号： H01L33/14 ,  H01L33/28

摘要： There is provided a ZnO based compound semiconductor light emitting device which can emit light with high efficiency and from an entire surface while using ZnO based compound semiconductor which can be expected with higher light emitting efficiency than that of a GaN based compound. On an insulating substrate (1), an n-type layer (2), an active layer (3), and a p-type layer (4), made of ZnO based compound semiconductor materials, are laminated, wherein a specific resistance of the n-type layer is 0.001 Ω·cm or more and 1 Ω·cm or less, and a film thickness (μm) of the n-type layer is set in a value or more calculated by a formula (specific resistance (Ω·cm))×300, and an n-side electrode (5) is formed on an exposed portion of a surface of the n-type layer opposite to a surface being in contact with the substrate and a p-side electrode (6) is formed on the p-type layer.

摘要翻译： 提供了一种ZnO基化合物半导体发光器件，其能够以比GaN基化合物更高的发光效率预期的ZnO基化合物半导体，能够高效率地发光并且从整个表面发光。 在绝缘基板（1）上层叠由ZnO系化合物半导体材料构成的n型层（2），有源层（3）和p型层（4），其中，电阻率 n型层的厚度为0.001＆OHgr·cm以上且1＆OHgr·cm以下，n型层的膜厚（μm）设定为通过公式计算的值（比电阻（ ＆OHgr;·cm））×300，并且n面电极（5）形成在与基板接触的表面相对的n型层的表面的露出部分和p侧电极（ 6）形成在p型层上。

公开(公告)号：US20100235107A1

公开(公告)日：2010-09-16

申请号：US12733694

申请日：2009-03-25

申请人： Kenji Fukumura ,  Tetsuo Yoshioka ,  Tetsuo Fujii ,  Takaaki Kawai ,  Hirofumi Higuchi ,  Teruo Oda ,  Yasuyuki Okuda

发明人： Kenji Fukumura ,  Tetsuo Yoshioka ,  Tetsuo Fujii ,  Takaaki Kawai ,  Hirofumi Higuchi ,  Teruo Oda ,  Yasuyuki Okuda

IPC分类号： G01N27/22 ,  G01N33/00

CPC分类号： G01N27/226 ,  G01N33/28

摘要： A concentration sensor device includes a sensor unit, a substrate, and a sedimentation limit unit. The sensor unit detects a concentration of a specific component contained in liquid. The substrate has a face to which the sensor unit is arranged. The sedimentation limit unit is integrally arranged with the sensor unit or arranged at an upstream side of the sensor unit in a flowing direction of the liquid. The sedimentation limit unit is configured to prevent sedimentation of a foreign object on the sensor unit. The sedimentation limit unit includes a piezoelectric element to vibrate when electricity is supplied so as to promote the foreign object to be separated from the sensor unit. The substrate has a recess recessed in a thickness direction of the substrate.

摘要翻译： 浓度传感器装置包括传感器单元，基板和沉降限制单元。 传感器单元检测液体中包含的特定成分的浓度。 基板具有布置传感器单元的面。 沉降限制单元与传感器单元一体地布置或者沿着液体的流动方向布置在传感器单元的上游侧。 沉淀限制单元被配置为防止异物在传感器单元上​​的沉降。 沉降限制单元包括压电元件，当供电时振动，以促进异物与传感器单元分离。 基板具有在基板的厚度方向上凹陷的凹部。

公开(公告)号：US07781938B2

公开(公告)日：2010-08-24

申请号：US12213894

申请日：2008-06-26

申请人： Makiko Sugiura ,  Yasuyuki Okuda ,  Tetsuo Fujii

发明人： Makiko Sugiura ,  Yasuyuki Okuda ,  Tetsuo Fujii

IPC分类号： H01L41/08

CPC分类号： B06B1/0629 ,  B06B3/00 ,  G01S7/523

摘要： An ultrasonic sensor includes a piezoelectric element and an acoustic matching member that are joined together to form an ultrasonic detector base. The ultrasonic detector base is sectioned by a clearance extending in an ultrasonic propagation direction to form multiple ultrasonic detectors arranged in an array. The clearance does not entirely section the ultrasonic detector base so that the ultrasonic detectors are joined together by a portion of the ultrasonic detector base.

摘要翻译： 超声波传感器包括连接在一起以形成超声波检测器基座的压电元件和声匹配构件。 超声波检测器基座以超声波传播方向延伸的间隙分段，形成排列成阵列的多个超声波探伤器。 该间隙不完全是超声波检测器底座的部分，使得超声波探测器由超声波检测器底座的一部分连接在一起。