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    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
    171.
    发明公开
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240313117A1

    公开(公告)日：2024-09-19

    申请号：US18675293

    申请日：2024-05-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiichi YONEDA

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/786 ,  H01L27/1225

    Abstract: A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.

    Display apparatus, display module, and electronic device
    173.
    发明授权
    Display apparatus, display module, and electronic device 有权

    公开(公告)号：US12096670B2

    公开(公告)日：2024-09-17

    申请号：US17625854

    申请日：2020-07-08

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Daisuke Kubota ,  Taisuke Kamada ,  Ryo Hatsumi ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima

    IPC: H01L51/52 ,  H10K50/86 ,  H10K59/35 ,  H10K59/65 ,  H10K102/00

    CPC classification number: H10K59/353 ,  H10K50/865 ,  H10K59/351 ,  H10K59/352 ,  H10K59/65 ,  H10K2102/311

    Abstract: The resolution of a display apparatus having alight detection function is increased. The display apparatus includes a light-emitting device and a light-emitting and light-receiving device. The light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode; the light-emitting and light-receiving device includes a second pixel electrode, a second light-emitting layer, an active layer, and the common electrode; the active layer includes an organic compound; the first light-emitting layer is positioned between the first pixel electrode and the common electrode; the second light-emitting layer and the active layer are each positioned between the second pixel electrode and the common electrode; the light-emitting device has a function of emitting light of a first color; and the light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color. The light-emitting and light-receiving device functions as both a light-emitting device and a light-receiving device, whereby a pixel can have a light-receiving function without an increase in the number of subpixels included in the pixel. Furthermore, the pixel can be provided with a light-receiving function without a reduction in the resolution of the display apparatus or a reduction in the aperture ratio of each subpixel.

    Semiconductor device
    174.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12095440B2

    公开(公告)日：2024-09-17

    申请号：US17765046

    申请日：2020-10-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kazuaki Ohshima ,  Hitoshi Kunitake ,  Yuto Yakubo ,  Takayuki Ikeda

    IPC: H03H7/38 ,  H01L21/02 ,  H01L21/822 ,  H01L27/088 ,  H03F3/19 ,  H03F3/60

    CPC classification number: H03H7/38 ,  H01L21/02565 ,  H01L21/822 ,  H01L27/088 ,  H03F3/19 ,  H03F3/60

    Abstract: An amplifier is formed in a wiring layer. A semiconductor device includes a second layer over a first layer with a metal oxide therebetween. The first layer includes a first transistor including a first semiconductor layer containing silicon. The second layer includes an impedance matching circuit, and the impedance matching circuit includes a second transistor including a second semiconductor layer containing gallium. The first transistor forms first coupling capacitance between the first transistor and the metal oxide, and the impedance matching circuit forms second coupling capacitance between the impedance matching circuit and the metal oxide. The impedance matching circuit is electrically connected to the metal oxide through the second coupling capacitance. The metal oxide inhibits the influence of first radiation noise emitted from the impedance matching circuit on the operation of the first transistor.

    Semiconductor device, power diode, and rectifier
    175.
    发明授权
    Semiconductor device, power diode, and rectifier 有权

    公开(公告)号：US12094982B2

    公开(公告)日：2024-09-17

    申请号：US18100200

    申请日：2023-01-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

    IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648

    Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

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