公开(公告)号：US10570506B2

公开(公告)日：2020-02-25

申请号：US15820777

申请日：2017-11-22

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Jingjing Liu ,  Zhong Qiang Hua ,  Chentsau Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.

公开(公告)号：US10269571B2

公开(公告)日：2019-04-23

申请号：US15648163

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Shiyu Sun ,  Sean S. Kang ,  Nam Sung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L29/423 ,  H01L29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/66

Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

公开(公告)号：US20180342384A1

公开(公告)日：2018-11-29

申请号：US15605751

申请日：2017-05-25

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Sean Kang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/34 ,  C23C16/56

Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.

公开(公告)号：US20180342373A1

公开(公告)日：2018-11-29

申请号：US15858789

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US10049927B2

公开(公告)日：2018-08-14

申请号：US15332737

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Sean Kang ,  Keith Tatseun Wong ,  He Ren ,  Mehul B. Naik ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/532

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

公开(公告)号：US20180221948A1

公开(公告)日：2018-08-09

申请号：US15941812

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F3/00 ,  B28B1/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B23K10/00 ,  H05B3/00

CPC classification number: B22F3/008 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H05B3/0061

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

公开(公告)号：US09993853B2

公开(公告)日：2018-06-12

申请号：US14556085

申请日：2014-11-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Jen Sern Lew ,  Arvind Sundarrajan ,  Srinivas D. Nemani

IPC: B08B3/04 ,  B08B5/02 ,  B08B6/00 ,  H01L21/67 ,  H01L21/683

CPC classification number: B08B5/02 ,  B08B6/00 ,  H01L21/67028 ,  H01L21/6831 ,  H01L21/6838

Abstract: Embodiments of methods and apparatus for removing particles from a surface of a substrate, such as from the backside of the substrate, are provided herein. In some embodiments, an apparatus for removing particles from a surface of a substrate includes: a substrate handler to expose the surface of the substrate; a particle separator to separate particles from the exposed surface of the substrate; a particle transporter to transport the separated particles; and a particle collector to collect the transported particles.

公开(公告)号：US20180065178A1

公开(公告)日：2018-03-08

申请号：US15728443

申请日：2017-10-09

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F3/00 ,  B23K10/02 ,  B23K10/00 ,  H05B3/00 ,  B28B1/00 ,  B22F3/105

CPC classification number: B22F3/008 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H05B3/0061

Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.

公开(公告)号：US09911594B2

公开(公告)日：2018-03-06

申请号：US15346306

申请日：2016-11-08

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Ellie Y. Yieh ,  Ludovic Godet ,  Yin Fan

IPC: H01L21/31 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3115 ,  H01J37/32

CPC classification number: H01L21/02304 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32422 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31155 ,  H01L29/66795 ,  H01L29/66803

Abstract: Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer.

公开(公告)号：US09852916B2

公开(公告)日：2017-12-26

申请号：US15194456

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Hao Chen ,  Chentsau (Chris) Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/28

CPC classification number: H01L21/3086 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67742

Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.