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    Nonvolatile memory devices and methods of operating nonvolatile memory devices
    14.
    发明授权
    Nonvolatile memory devices and methods of operating nonvolatile memory devices 有权
    非易失性存储器件和操作非易失性存储器件的方法

    公开(公告)号：US08730738B2

    公开(公告)日：2014-05-20

    申请号：US13211743

    申请日：2011-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    IPC分类号： G11C11/34 ,  G11C16/06

    CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454

    摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.

    摘要翻译： 操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压 响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

    SSD WITH RAID CONTROLLER AND PROGRAMMING METHOD
    16.
    发明申请
    SSD WITH RAID CONTROLLER AND PROGRAMMING METHOD 审中-公开
    SSD与RAID控制器和编程方法

    公开(公告)号：US20130268724A1

    公开(公告)日：2013-10-10

    申请号：US13828138

    申请日：2013-03-14

    申请人： Man-Keun Seo ,  Eun-Chu Oh ,  Hong-Rak Son ,  Jun-Jin Kong

    发明人： Man-Keun Seo ,  Eun-Chu Oh ,  Hong-Rak Son ,  Jun-Jin Kong

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F11/108 ,  G06F2212/1032 ,  G06F2212/7208

    摘要： A solid state drive (SSD) includes non-volatile memory devices and a RAID controller. Each of the non-volatile memory devices includes a memory cell array having a plurality of physical pages. The RAID controller performs a parity operation on 1st through (N−1)th physical page data to generate Nth physical page data, determines a physical page group including 1st through Nth physical pages that are selected from the 1st through Nth non-volatile memory devices, respectively, such that at least two of the 1st through Nth physical pages have different bit error rates from each other, and stores the 1st through Nth physical page data in the 1st through Nth physical pages, respectively.

    摘要翻译： 固态硬盘（SSD）包括非易失性存储设备和RAID控制器。 每个非易失性存储器件包括具有多个物理页面的存储单元阵列。 RAID控制器在第1至第（N-1）个物理页数据上执行奇偶校验操作以产生第N物理页数据，确定包括从第1至第N非易失性存储器设备中选择的第1至第N物理页的物理页组 分别使得第1至第N物理页中的至少两个彼此具有不同的比特错误率，并且分别将第1至第N物理页数据存储在第1至第N物理页中。

    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND GARBAGE COLLECTION METHOD THEREOF
    18.
    发明申请
    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND GARBAGE COLLECTION METHOD THEREOF 审中-公开
    包含非易失性存储器件的存储器件及其收集方法

    公开(公告)号：US20160267004A1

    公开(公告)日：2016-09-15

    申请号：US15064185

    申请日：2016-03-08

    申请人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

    发明人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205

    摘要： A storage device is provided as follows. A nonvolatile memory device includes blocks, each block having sub-blocks erased independently. A memory controller performs a garbage collection operation on the nonvolatile memory device by selecting a garbage collection victim sub-block among the sub-blocks and erasing the selected garbage collection victim sub-block to generate a free sub-block. The memory controller selects the garbage collection victim sub-block using valid page information of each sub-block and valid page information of memory cells adjacent to each sub-block.

    摘要翻译： 存储装置如下提供。 非易失性存储器件包括块，每个块具有独立擦除的子块。 存储器控制器通过选择子块中的垃圾收集受害者子块并擦除所选择的垃圾收集受害者子块以产生空闲子块来对非易失性存储器件执行垃圾回收操作。 存储器控制器使用每个子块的有效页面信息和与每个子块相邻的存储器单元的有效页面信息来选择垃圾回收受害者子块。

    Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods
    19.
    发明授权
    Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods 有权
    非易失性存储器件和存储器系统具有相同的存储器管理，擦除和编程方法

    公开(公告)号：US09390001B2

    公开(公告)日：2016-07-12

    申请号：US13938273

    申请日：2013-07-10

    申请人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

    发明人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

    IPC分类号： G06F12/02 ,  G11C16/34 ,  G11C16/04

    CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C11/5671 ,  G11C16/0416 ,  G11C16/0466 ,  G11C16/3445

    摘要： An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.

    摘要翻译： 非易失性存储器件的擦除方法包括设置擦除模式，以及根据所设置的擦除模式执行正常擦除操作和快速擦除操作之一。 执行正常擦除操作以将存储器单元的阈值电压设置为低于第一擦除验证电平的擦除状态。 执行快速擦除操作以将存储器单元的阈值电压设置为低于第二擦除验证电平的伪擦除状态。 第二擦除验证级别高于第一擦除验证级别。

    Nonvolatile memory device and data write method
    20.
    发明授权
    Nonvolatile memory device and data write method 有权
    非易失存储器件和数据写入方式

    公开(公告)号：US09355701B2

    公开(公告)日：2016-05-31

    申请号：US14179614

    申请日：2014-02-13

    申请人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

    发明人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

    IPC分类号： G11C11/16 ,  G11C11/22 ,  G11C13/00 ,  G11C29/04 ,  G11C7/10

    CPC分类号： G11C11/1675 ,  G11C7/1006 ,  G11C11/2275 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2029/0411

    摘要： A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.

    摘要翻译： 提供了一种非易失性存储器件的数据写入方法，包括接收要存储在所选存储器单元中的写数据; 读取存储在所选存储单元中的数据; 根据多个数据调制方式处理写入数据以产生多个调制数据值; 当选择的存储单元写入写入数据和多个调制数据值时，计算翻转位数和切换位数，每个翻转位指示所选存储单元的逻辑值相反，并且每个开关位 指示所选存储单元的逻辑值从第一逻辑值切换到第二逻辑值; 以及根据计算翻转位数和切换位数来选择写入数据和多个调制数据值之一。