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20 条记录 (耗时 0.014 秒)

    Method of copper transport prevention by a sputtered gettering layer on backside of wafer
    11.
    发明授权
    Method of copper transport prevention by a sputtered gettering layer on backside of wafer 有权
    通过晶片背面的溅射吸气层预防铜传输的方法

    公开(公告)号：US06358821B1

    公开(公告)日：2002-03-19

    申请号：US09619376

    申请日：2000-07-19

    申请人： Subhash Gupta ,  Simon Chooi ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono

    发明人： Subhash Gupta ,  Simon Chooi ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono

    IPC分类号： H01L2122

    CPC分类号： H01L21/3221 ,  C23C14/165 ,  H01L21/2885

    摘要： A method of preventing copper transport on a semiconductor wafer, comprising the following steps. A semiconductor wafer having a front side and a backside is provided. Metal, selected from the group comprising aluminum, aluminum-copper, aluminum-silicon, and aluminum-copper-silicon is sputtered on the backside of the wafer to form a layer of metal. The back side sputtered aluminum layer may be partially oxidized at low temperature to further decrease the copper penetration possibility and to also provide greater flexibility in subsequent copper interconnect related processing. Once the back side layer is in place, the wafer can be processed as usual. The sputtered back side aluminum layer can be removed during final backside grinding.

    摘要翻译： 一种防止半导体晶片上的铜传输的方法，包括以下步骤。 提供具有正面和背面的半导体晶片。 从包括铝，铝 - 铜，铝 - 硅和铝 - 铜 - 硅的组中选择的金属溅射在晶片的背面以形成一层金属。 背面溅射的铝层可以在低温下部分氧化，以进一步降低铜的渗透可能性，并且在随后的铜互连相关处理中也提供更大的灵活性。 一旦背面层就位，就可以照常处理晶片。 最后的背面研磨可以除去溅射的背面铝层。

    Method of silicon oxide and silicon glass films deposition
    14.
    发明授权
    Method of silicon oxide and silicon glass films deposition 有权
    氧化硅和硅玻璃膜沉积方法

    公开(公告)号：US06583069B1

    公开(公告)日：2003-06-24

    申请号：US09458729

    申请日：1999-12-13

    申请人： Vladislav Y. Vassiliev ,  John Leonard Sudijono

    发明人： Vladislav Y. Vassiliev ,  John Leonard Sudijono

    IPC分类号： H01L21316

    CPC分类号： B41J2/17553

    摘要： A method for fabricating a silicon oxide and silicon glass layers at low temperature using High Density Plasma CVD with silane or organic or inorganic silane derivatives as a source of silicon, inorganic compounds containing boron, phosphorus, and fluorine as doping compounds, oxygen, and gas additives is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in a reactor chamber. A key feature of the invention's process is a mole ratio of gas additive to source of silicon, which is maintained in the range of about 0.3-20 depending on the compound used and the deposition process conditions. As a gas additive, one of the group including halide-containing organic compounds having the general formula CxHyRz, and chemical compounds with the double carbon-carbon bonds having the general formula CnH2n, is used. This feature provides the reaction conditions for the proper reaction performance that allows a deposition of a film with good film integrity and void-free gap-fill between the steps of device structures.

    摘要翻译： 使用硅烷或有机或无机硅烷衍生物作为硅源的高密度等离子体CVD制备氧化硅和硅玻璃层的方法，其中含有硼，磷和氟的无机化合物作为掺杂化合物，氧和气体 描述了添加剂。 在反应器室中的整个沉积步骤中保持具有一定等离子体密度的RF等离子体。 本发明方法的关键特征是气体添加剂与硅源的摩尔比，其保持在约0.3-20的范围内，这取决于所用的化合物和沉积工艺条件。 作为气体添加剂，使用具有通式C x H y R z的含卤化物的有机化合物和具有通式C n H 2n的双碳 - 碳键的化合物之一。 该特征提供了用于适当反应性能的反应条件，其允许在器件结构的步骤之间沉积具有良好膜完整性和无空隙间隙填充的膜。

    Method of high-density plasma boron-containing silicate glass film deposition
    15.
    发明授权
    Method of high-density plasma boron-containing silicate glass film deposition 失效
    高密度等离子体含硼硅酸盐玻璃膜沉积方法

    公开(公告)号：US06500771B1

    公开(公告)日：2002-12-31

    申请号：US09494635

    申请日：2000-01-31

    申请人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Alan Cuthbertson

    发明人： Vladislav Vassiliev ,  John Leonard Sudijono ,  Alan Cuthbertson

    IPC分类号： H01L2131

    CPC分类号： H01L21/02129 ,  C23C16/045 ,  C23C16/401 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31625

    摘要： A method for fabricating a boron-contained silicate glass layers, such as borosilicate and borophosphosilicate glass films at low temperature using High Density Plasma CVD with silane derivatives as a source of silicon, boron and phosphorus compounds as a doping compounds, oxygen is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a flow capability of boron-contained silicate glass materials which provide a film with good film integrity and void-free gap-fill within the steps of device structures after low temperature thermal budget anneal conditions.

    摘要翻译： 描述了使用硅烷衍生物作为硅源，硼和磷化合物作为掺杂化合物的氧的高密度等离子体CVD制备含硼硅酸盐玻璃层例如硼硅酸盐和硼磷硅酸盐玻璃膜的方法，例如硼硅酸盐和硼磷硅酸盐玻璃膜。 在反应器室中的整个沉积步骤中保持具有一定等离子体密度的RF等离子体。 本发明方法的主要特征是含硼硅酸盐玻璃材料的流动能力，其在低温热预热退火条件之后在器件结构的步骤中提供具有良好膜完整性和无空隙间隙填充的膜。