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    Low-K dielectric material system for IC application
    14.
    发明授权
    Low-K dielectric material system for IC application 有权
    低K电介质材料系统用于IC应用

    公开(公告)号：US07015581B2

    公开(公告)日：2006-03-21

    申请号：US11037995

    申请日：2005-01-18

    Applicant: Jon A. Casey ,  Daniel C. Edelstein

    Inventor： Jon A. Casey ,  Daniel C. Edelstein

    IPC: H01L23/48 ,  H01L21/4763

    CPC classification number: H01L21/02129 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02318 ,  H01L21/02343 ,  H01L21/31625 ,  H01L21/31695 ,  H01L21/7682

    Abstract: A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.

    Abstract translation: 提供了用作互连结构的中间层的低k电介质。 本发明的电介质是碱性硼硅酸盐玻璃，当在某些组成范围内配制时，当使用某些热分布进行加工时，可以发生旋节分解。 晶间分解是将硅酸盐玻璃化学和物理分离成独特的互穿微结构，其包含基本上纯的二氧化硅网络和富含硼的网络。 通过在硅酸盐玻璃的加工过程中的组合和热控制可以控制尺寸（即刻度）和分离量。

    Thermoelectric devices and methods for making the same
    17.
    发明授权
    Thermoelectric devices and methods for making the same 失效
    热电器件及其制造方法

    公开(公告)号：US06262357B1

    公开(公告)日：2001-07-17

    申请号：US09543269

    申请日：2000-04-05

    Applicant: Gregory M. Johnson ,  Jon A. Casey ,  Scott R. Dwyer ,  David C. Long ,  Kevin M. Prettyman

    Inventor： Gregory M. Johnson ,  Jon A. Casey ,  Scott R. Dwyer ,  David C. Long ,  Kevin M. Prettyman

    IPC: H01L3528

    CPC classification number: H01L23/38 ,  H01L35/32 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2224/0401

    Abstract: Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods for forming tunnels through lamination and etching are employed. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.

    Abstract translation: 具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。 具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。 嵌入式电气连接由面板中的通孔和线形成。 采用通过层压和蚀刻形成隧道的方法。 然后将不同材料的一部分在隧道内熔化以形成粘结。 通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。 在两个高导热材料面板之间还引入低导热材料。通过在预定导热率的孔内冲压通孔并填充n型和p型浆料，将不同的导热层引入异构半导体材料。 交替的半导体材料还可以通过屏蔽技术和线结构的层叠来以线性或径向扇出图案图案化。 面板内的液体通道用于增强热能传递。热电器件使用MLC技术物理地并入IC封装内。

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