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    Nitride semiconductor light emitting device
    13.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US08643037B2

    公开(公告)日：2014-02-04

    申请号：US13441562

    申请日：2012-04-06

    申请人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

    发明人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

    IPC分类号： H01L33/32

    CPC分类号： H01L33/04 ,  H01L33/32

    摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    16.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20120261687A1

    公开(公告)日：2012-10-18

    申请号：US13441562

    申请日：2012-04-06

    申请人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

    发明人： Hyun Wook SHIM ,  Suk Ho YOON ,  Tan SAKONG ,  Je Won KIM ,  Ki Sung KIM

    IPC分类号： H01L33/32

    CPC分类号： H01L33/04 ,  H01L33/32

    摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

    METHOD OF MANUFACTURING LIGHT EMITTING DIODE
    17.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DIODE 审中-公开
    制造发光二极管的方法

    公开(公告)号：US20120160157A1

    公开(公告)日：2012-06-28

    申请号：US13208639

    申请日：2011-08-12

    申请人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

    发明人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

    IPC分类号： C30B25/02 ,  C30B25/08

    CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/325

    摘要： There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

    摘要翻译： 提供一种制造发光二极管的方法，该方法包括：在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层，其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前，第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外，可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    18.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20120025246A1

    公开(公告)日：2012-02-02

    申请号：US13167396

    申请日：2011-06-23

    申请人： Tae Hun KIM ,  Gi Bum KIM ,  Won Goo HUR ,  Young Sun KIM ,  Ki Sung KIM

    发明人： Tae Hun KIM ,  Gi Bum KIM ,  Won Goo HUR ,  Young Sun KIM ,  Ki Sung KIM

    IPC分类号： H01L33/58 ,  B82Y40/00

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L2933/0091

    摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

    摘要翻译： 公开了一种半导体发光器件及其制造方法。 该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模 以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成 发光堆叠在基板的第一和第二不平坦结构上。

    Vertical external cavity surface emitting laser with pump beam reflector
    20.
    发明授权
    Vertical external cavity surface emitting laser with pump beam reflector 有权
    垂直外腔表面发射激光器与泵浦反射器

    公开(公告)号：US07856043B2

    公开(公告)日：2010-12-21

    申请号：US11448774

    申请日：2006-06-08

    申请人： Ki-sung Kim ,  Taek Kim

    发明人： Ki-sung Kim ,  Taek Kim

    IPC分类号： H01S5/00

    CPC分类号： H01S5/183 ,  H01S3/094084 ,  H01S3/109 ,  H01S5/024 ,  H01S5/041 ,  H01S5/141

    摘要： A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled using a pumping beam reflection layer to increase pumping beam absorption is provided. The VECSEL includes: an active layer for generating and emitting signal light; an external mirror that is separated from and faces a top surface of the active layer and transmits a first portion of the signal light and reflects a second portion of the signal light to the active layer; a first reflection layer contacting a lower surface of the active layer and reflecting the signal light to the external mirror; a pump laser for emitting the pumping beam toward the lower surface of the active layer to excite the active layer; and a second reflection layer contacting the top surface of the active layer and reflecting a portion of the pumping beam back to the active layer.

    摘要翻译： 提供了使用端泵浦的垂直外腔表面发射激光器（VECSEL），其中泵浦光束使用泵浦光束反射层再循环以增加泵浦光束吸收。 VECSEL包括：用于产生和发射信号光的有源层; 外部反射镜，其与有源层的顶表面分离并且面对有源层的顶表面，并且透射信号光的第一部分并将信号光的第二部分反射到有源层; 接触有源层的下表面并将信号光反射到外部反射镜的第一反射层; 泵浦激光器，用于朝着有源层的下表面发射泵浦光束以激发有源层; 以及与有源层的顶表面接触并将泵浦光束的一部分反射回有源层的第二反射层。