公开(公告)号：US20120295419A1

公开(公告)日：2012-11-22

申请号：US13470768

申请日：2012-05-14

Applicant: SUKTI CHATTERJEE ,  ANNAMALAI LAKSHMANAN ,  JOE GRIFFITH CRUZ ,  PRAVIN K. NARWANKAR

Inventor： SUKTI CHATTERJEE ,  ANNAMALAI LAKSHMANAN ,  JOE GRIFFITH CRUZ ,  PRAVIN K. NARWANKAR

IPC: H01L21/20

CPC classification number: H01L21/0237 ,  C23C16/02 ,  C23C16/24 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.

Abstract translation: 本文提供了在基板上沉积材料的方法。 在一些实施例中，在衬底上沉积材料的方法可以包括将衬底暴露于含硅气体和还原气体; 增加含硅气体的流量，同时降低还原气体的流速以形成第一层; 以及在所述第一层顶上沉积第二层。

公开(公告)号：US20110104848A1

公开(公告)日：2011-05-05

申请号：US12873299

申请日：2010-08-31

Applicant: DIETER HAAS ,  PRAVIN K. NARWANKAR ,  RANDHIR P.S. THAKUR

Inventor： DIETER HAAS ,  PRAVIN K. NARWANKAR ,  RANDHIR P.S. THAKUR

IPC: H01L31/18 ,  H01L21/465 ,  C23C16/50

CPC classification number: C23C16/24 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.

Abstract translation: 本文提供了热线化学气相沉积（HWCVD）的方法和装置。 在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述基底被多个HWCVD源涂覆而不破坏真空。 在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

公开(公告)号：US20110100955A1

公开(公告)日：2011-05-05

申请号：US12885139

申请日：2010-09-17

Applicant: VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

Inventor： VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

IPC: C23F1/00 ,  C23C16/22 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00 ,  B82Y40/00

CPC classification number: C23C16/545 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/035227 ,  H01L31/075 ,  H01L31/1876 ,  H01L31/206 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract translation: 提供了一种用于在基底上形成复合材料的方法和装置。 复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。 在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。 纤维网被引导通过各种处理室以形成复合材料。 在另一个实施例中，大规模衬底包括离散衬底。 离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。 复合材料可用于形成储能装置和/或光伏器件。

公开(公告)号：US20090246972A1

公开(公告)日：2009-10-01

申请号：US12057113

申请日：2008-03-27

Applicant: SHREYAS S. KHER ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

Inventor： SHREYAS S. KHER ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

IPC: H01L21/31

CPC classification number: H01L21/31645 ,  C23C14/083 ,  C23C16/56 ,  H01L21/3141

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract translation: 公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。 还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

公开(公告)号：US08603195B2

公开(公告)日：2013-12-10

申请号：US12858531

申请日：2010-08-18

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC: H01M4/13 ,  H01M4/58 ,  H01M4/60 ,  H01M4/82 ,  H01M6/12 ,  H01M6/46 ,  B05D5/12

CPC classification number: H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract translation: 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US20130243971A1

公开(公告)日：2013-09-19

申请号：US13420164

申请日：2012-03-14

Applicant: David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

Inventor： David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

IPC: C23C16/455 ,  C23C16/56

CPC classification number: C23C16/45551 ,  C23C16/45548 ,  C23C16/483

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

Abstract translation: 提供了原子层沉积装置和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体注入器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：US20130192761A1

公开(公告)日：2013-08-01

申请号：US13754733

申请日：2013-01-30

Applicant: Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

Inventor： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

IPC: C23C16/54 ,  B05C13/00

CPC classification number: C23C16/54 ,  B05C13/00 ,  C23C16/45551

Abstract: A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

Abstract translation: 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

公开(公告)号：US08119210B2

公开(公告)日：2012-02-21

申请号：US10851561

申请日：2004-05-21

Applicant: Pravin K. Narwankar ,  Gregg Higashi

Inventor： Pravin K. Narwankar ,  Gregg Higashi

IPC: H05H1/24

CPC classification number: H01L21/3141 ,  C23C16/401 ,  H01L21/3143

Abstract: In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

Abstract translation: 在一个实施例中，提供了一种用于在处理室中的电介质层上沉积覆盖层的方法，其包括在基底表面上沉积电介质层，通过ALD工艺沉积含硅层，包括交替地脉冲硅前体和 氧化气体进入处理室，并将含硅层暴露于氮化过程。 在另一个实施例中，提供了一种通过ALD工艺在处理室中的电介质层上沉积含硅覆盖层的方法，其包括使硅前体流入处理室，用吹扫气体吹扫处理室， 包括通过使H 2气体和含氧气体流过水蒸汽发生器而形成的水的氧化气体，以及用吹扫气体吹扫处理室。

公开(公告)号：US07794544B2

公开(公告)日：2010-09-14

申请号：US11925684

申请日：2007-10-26

Applicant: Son T. Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin K. Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnan ,  Paul Deaton

Inventor： Son T. Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin K. Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnan ,  Paul Deaton

IPC: C23C16/00 ,  E03B1/00 ,  F17D1/00 ,  F15C1/16

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Abstract translation: 本发明的实施例描述了一种处理室，例如ALD室，其具有逐渐增加的直径的气体输送导管，以减少气体输送期间的焦耳汤普森效应，与衬底支撑件平齐的环形气体衬套以维持气体温度 并且减少到基板支撑体背面的气流，以及气体储存器，以允许控制输送处理气体。 直径逐渐增大的气体管道，环形气体衬套和气体储存器有助于保持气体温度稳定并减少颗粒的产生。

公开(公告)号：US06475854B2

公开(公告)日：2002-11-05

申请号：US09748072

申请日：2000-12-21

Applicant: Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

Inventor： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

IPC: H01L218242

CPC classification number: H01L28/75 ,  H01L28/55

Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

Abstract translation: 包括底电极，绝缘体和顶电极的电容器结构及其制造方法。 底部和顶部电极优选地包括金属部分和导电含氧金属部分。 在一个实施例中，沉积钌层以形成底部电极的一部分。 在沉积绝缘体之前，将钌在含氧环境中退火。 然后将绝缘体沉积在含氧钌层上。 顶部电极的形成包括在绝缘体上沉积第一金属，退火第一金属，然后沉积第二金属。 第一和第二金属可以是钌。