公开(公告)号：US20150332924A1

公开(公告)日：2015-11-19

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/285 ,  H01L21/263

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角＆phgr;偏转板的电压差，偏转板功率的频率，射束电流，衬底距离，喷嘴中的压力，过程中的气体流速 腔室，束灼伤的分离，豆烧的持续时间和/或束导流器输出的占空比。

公开(公告)号：US20150144786A1

公开(公告)日：2015-05-28

申请号：US14550417

申请日：2014-11-21

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn

IPC: H01J37/30 ,  H01J37/20 ,  H01J37/18

CPC classification number: H01J37/30 ,  H01J37/08 ,  H01J2237/0812 ,  H01J2237/317

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括使用一个或多个分子束来优化离子束局部区域处的压力。

公开(公告)号：US20140123457A1

公开(公告)日：2014-05-08

申请号：US14151151

申请日：2014-01-09

Applicant: TEL Epion Inc.

Inventor： Robert K. Becker ,  Avrum Freytsis

IPC: H01J37/30

CPC classification number: H01J37/3002 ,  G21K2201/00 ,  H01J37/08 ,  H01J37/30 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0812 ,  Y10T29/49769 ,  Y10T29/49826

Abstract: A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.

Abstract translation: 组装喷嘴/撇渣器模块的方法包括以刚性串联构造联接喷嘴组件和撇渣器组件以更准确地控制气体簇离子束（GCIB）的形成。 喷嘴/撇渣器模块在安装到生产GCIB处理系统之前进行预对准，以更准确地定位GCIB。

公开(公告)号：US08709944B2

公开(公告)日：2014-04-29

申请号：US13888981

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

公开(公告)号：US20130196509A1

公开(公告)日：2013-08-01

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US10971411B2

公开(公告)日：2021-04-06

申请号：US16154025

申请日：2018-10-08

Applicant: TEL Epion Inc.

Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  G05B19/418

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

公开(公告)号：US20160222521A1

公开(公告)日：2016-08-04

申请号：US14661411

申请日：2015-03-18

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Youngdon Chang ,  Il-seok Song ,  Noel Russell

IPC: C23F1/00

CPC classification number: G03F7/00 ,  C23F4/00 ,  G03F7/40 ,  H01L21/3086

Abstract: A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.

Abstract translation: 描述了用于图案化衬底的方法。 该方法包括接收具有图案化层的衬底，其中图案化层限定第一心轴图案，并且其中第一组合物的第一材料层共形沉积在第一心轴图案上。 该方法还包括使用第一气体簇离子束（GCIB）蚀刻工艺部分地去除第一材料层，以暴露第一心轴图案的顶表面，在邻近第一心轴图案的特征的底部区域处打开第一材料层的一部分 第一心轴图案，并且将第一材料层的剩余部分保持在第一心轴图案的侧壁上; 以及使用一个或多个蚀刻工艺选择性地去除所述第一心轴图案以留下第二心轴图案，所述第二心轴图案包括残留在所述第一心轴图案的侧壁上的所述第一材料层的剩余部分。

公开(公告)号：US20160071734A1

公开(公告)日：2016-03-10

申请号：US14842416

申请日：2015-09-01

Applicant: TEL Epion Inc.

Inventor： Michael Graf ,  Noel Russell ,  Matthew C. Gwinn ,  Allen J. Leith

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/311 ,  H01J27/02

CPC classification number: H01L21/3065 ,  H01J27/026 ,  H01J37/317 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/16 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32136

Abstract: A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

Abstract translation: 描述了一种光束处理系统和操作方法。 特别地，光束处理系统包括具有喷嘴组件的光束源，喷嘴组件被配置为将初级气体通过喷嘴组件引入真空容器，以便产生诸如气体束束的气体束，并且可选地， 定位在喷嘴组件下游的离子发生器，并被配置为离子化气体束以产生离子化的气体束。 光束处理系统还包括处理室，其中定位用于由气体束进行处理的基板和二次气体源，其中二次气体源包括输送二次气体的二次气体供应系统和二次气体控制器 其可操作地控制注入喷嘴组件下游的光束处理系统中的二次气体的流动。

公开(公告)号：US20150270135A1

公开(公告)日：2015-09-24

申请号：US14731020

申请日：2015-06-04

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23F4/00 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB由含有至少一种蚀刻化合物和至少一种另外的气体的加压气体混合物形成，其中GCIB中的至少一种蚀刻化合物的浓度超过加压气体混合物的5at％。

公开(公告)号：US20150137006A1

公开(公告)日：2015-05-21

申请号：US14548550

申请日：2014-11-20

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。