公开(公告)号：US10665542B2

公开(公告)日：2020-05-26

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/76 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US10608097B2

公开(公告)日：2020-03-31

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/8238

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20190017165A1

公开(公告)日：2019-01-17

申请号：US16033866

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang Ho Yu ,  Vikash Banthia

IPC: C23C16/08 ,  C23C16/455

Abstract: Methods of depositing low resistivity tungsten nucleation layers using alkyl borane reducing agents are described. Alkyl borane reducing agents utilized include compounds with the general formula BR3, where R is a C1-C6 alkyl group. Apparatus for performing atomic layer deposition of tungsten nucleation layers using alkyl borane reducing agents are also described.

公开(公告)号：US10043709B2

公开(公告)日：2018-08-07

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Hua Ai ,  Jiang Lu ,  Avgerinos V. Gelatos ,  Paul F. Ma ,  Sang Ho Yu ,  Feng Q. Liu ,  Xinyu Fu ,  Weifeng Ye

IPC: H01L21/768 ,  C23C16/06 ,  H01L21/285 ,  C23C16/04 ,  H01L23/532

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

公开(公告)号：US20180155827A1

公开(公告)日：2018-06-07

申请号：US15830608

申请日：2017-12-04

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Siddarth Krishnan ,  Paul F. Ma ,  Sang Ho Yu

IPC: C23C16/34 ,  C23C16/32 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/18 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45553

Abstract: Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a hydrazine derivative to form a metal containing film are described.

公开(公告)号：US20180142348A1

公开(公告)日：2018-05-24

申请号：US15814863

申请日：2017-11-16

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/403 ,  C01F7/02 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45544 ,  H01J37/26

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

公开(公告)号：US09938622B2

公开(公告)日：2018-04-10

申请号：US15045667

申请日：2016-02-17

Applicant: Applied Materials, Inc.

Inventor： Tae Hong Ha ,  Sang Ho Yu ,  Kiejin Park

IPC: C23C16/06 ,  C23C16/50 ,  C23C16/46 ,  C23C16/505 ,  C23C16/02 ,  C23C16/16 ,  C23C16/18 ,  C23C28/00 ,  H01L21/285 ,  H01L21/768 ,  C23C16/513

CPC classification number: C23C16/46 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/18 ,  C23C16/505 ,  C23C16/513 ,  C23C28/322 ,  C23C28/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

公开(公告)号：US09528183B2

公开(公告)日：2016-12-27

申请号：US14255443

申请日：2014-04-17

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Bo Zheng ,  Sang Ho Yu ,  Avgerinos V. Gelatos ,  Bhushan N. Zope ,  Jeffrey Anthis ,  Benjamin Schmiege

IPC: C25F1/00 ,  C23C16/44 ,  H01J37/32 ,  B08B9/00

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。

公开(公告)号：US11894233B2

公开(公告)日：2024-02-06

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

CPC classification number: H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28568 ,  H01L23/53242

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11552082B2

公开(公告)日：2023-01-10

申请号：US17002415

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC: H01L21/3213 ,  H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L27/108 ,  H01L29/49 ,  H01L29/423

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.