公开(公告)号：US12170213B2

公开(公告)日：2024-12-17

申请号：US17178204

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Nyi Oo Myo

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/08 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes an inner region having a pattern formed in a top surface thereof, the pattern including a plurality of substrate support features separated by a plurality of venting channels. The susceptor includes a rim surrounding and coupled to the inner region, wherein the inner region is recessed relative to the rim to form a recessed pocket configured to receive a substrate. The susceptor includes a plurality of bumps extending radially inward from an inner diameter of the rim, the plurality of bumps configured to contact an outer edge of a substrate supported by the plurality of substrate support features for positioning the substrate within the recessed pocket.

公开(公告)号：US12077880B2

公开(公告)日：2024-09-03

申请号：US17243158

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Nyi Oo Myo ,  Tao Sheng ,  Yong Zheng

IPC: C30B25/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B41J2/16 ,  G01B11/06 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC classification number: C30B25/16 ,  C23C14/50 ,  C23C14/541 ,  C23C14/547 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B23/002 ,  C30B23/063 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B01J2219/00443 ,  B41J2/1642 ,  G01B11/0625 ,  G01N2201/062 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US11948818B2

公开(公告)日：2024-04-02

申请号：US17546769

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Tao Sheng ,  Vinh N. Tran

IPC: H01L21/67 ,  G01J5/00 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  G01J5/0007 ,  H01L21/3065

Abstract: A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.

公开(公告)号：US11781212B2

公开(公告)日：2023-10-10

申请号：US17224537

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Schubert Chu ,  Nyi Oo Myo ,  Kartik Bhupendra Shah ,  Zhiyuan Ye ,  Richard O. Collins

IPC: C23C14/24 ,  H01L21/67 ,  C23C14/50

CPC classification number: C23C14/24 ,  C23C14/50 ,  H01L21/67017

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US08747560B2

公开(公告)日：2014-06-10

申请号：US13766230

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： Richard Collins ,  Kailash Kiran Patalay ,  Jean Vatus ,  Zhepeng Cong

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

Abstract translation: 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。

公开(公告)号：US20130152859A1

公开(公告)日：2013-06-20

申请号：US13766230

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

IPC: H01L21/68

CPC classification number: H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

公开(公告)号：US20250038053A1

公开(公告)日：2025-01-30

申请号：US18361326

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Tao Sheng ,  Ala Moradian

IPC: H01L21/66 ,  C23C16/52 ,  C30B25/16 ,  G05B13/02

Abstract: A method of analyzing completion of seasoning of semiconductor processing chambers may include training a model using seasoning cycle characteristics data obtained from existing semiconductor processing chambers. A supervised learning process may label the characteristics data based on expert determined identify seasoning completion and may optionally label the characteristics data based on chamber open event information or preventive maintenance information. The trained model may be used to characterize another chamber during seasoning to determine whether seasoning is completed and/or when or how long or how many seasoning cycles may be performed until seasoning is complete.

公开(公告)号：US11848226B2

公开(公告)日：2023-12-19

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US11848202B2

公开(公告)日：2023-12-19

申请号：US17456967

申请日：2021-11-30

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Mostafa Baghbanzadeh ,  Tao Sheng ,  Enle Choo

IPC: C23C16/455 ,  C23C16/46 ,  G01B17/02 ,  C23C16/52 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L21/02293 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/463 ,  C23C16/52 ,  G01B17/02 ,  G01B17/025

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

公开(公告)号：US11359972B2

公开(公告)日：2022-06-14

申请号：US17021411

申请日：2020-09-15

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Schubert S. Chu ,  Nyi O. Myo

IPC: G01J5/53 ,  G01J5/34 ,  G01J5/80

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.