公开(公告)号：US20150184029A1

公开(公告)日：2015-07-02

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Shoutian Ll ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US09803106B2

公开(公告)日：2017-10-31

申请号：US14750050

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh ,  Daniel Clingerman

IPC: C09G1/02 ,  C09G1/06 ,  B24B37/04 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

公开(公告)号：US09617450B2

公开(公告)日：2017-04-11

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US09566686B2

公开(公告)日：2017-02-14

申请号：US14965168

申请日：2015-12-10

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: B24B37/04 ,  C23F1/40 ,  H01L21/321 ,  C09G1/02

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US09303188B2

公开(公告)日：2016-04-05

申请号：US14203647

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150376462A1

公开(公告)日：2015-12-31

申请号：US14750204

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Tina Li

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除层的至少一部分。

公开(公告)号：US20150376459A1

公开(公告)日：2015-12-31

申请号：US14749948

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Abstract translation: 化学机械抛光组合物包括分散在液体载体中的胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒包括掺入其中的含氮或含磷化合物，使得颗粒具有正电荷。 组合物可用于抛光包括硅氧材料如TEOS的基材。

公开(公告)号：US20150267081A1

公开(公告)日：2015-09-24

申请号：US14222086

申请日：2014-03-21

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Jeffrey Dysard ,  Steven Grumbine

IPC: C09G1/02 ,  C23F3/03 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/06

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括分散在液体载体中的水性液体载体和胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒具有至少6mV的永久正电荷。 大约30％以上的胶态二氧化硅磨料颗粒包括三个或更多个聚集的一次粒子。

公开(公告)号：US08906252B1

公开(公告)日：2014-12-09

申请号：US13898842

申请日：2013-05-21

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC: C09K13/00 ,  C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09G1/16

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供了含有二氧化铈研磨剂，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R2，R3和R4以及n如本文所定义，和水，其中抛光 组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

公开(公告)号：US20140349483A1

公开(公告)日：2014-11-27

申请号：US14289728

申请日：2014-05-29

Applicant: Cabot Microelectronics Corporation

Inventor： Tina LI ,  Kevin Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC: H01L21/306 ,  C09G1/02

CPC classification number: G09G1/02 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。