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11.发明授权
公开(公告)号：US5676752A
公开(公告)日：1997-10-14
申请号：US291389
申请日：1994-08-16
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02422 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2924/0002 , H01S2304/12 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/913 , Y10S117/915 , Y10S148/023 , Y10S148/103 , Y10S148/105
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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公开(公告)号：US5588994A
公开(公告)日：1996-12-31
申请号：US468530
申请日：1995-06-06
IPC分类号： C30B25/04 , C30B33/00 , H01L21/20 , H01L25/04 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B29/06
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02422 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2924/0002 , H01S2304/12 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/913
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
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公开(公告)号：US5273616A
公开(公告)日：1993-12-28
申请号：US856877
申请日：1992-03-24
IPC分类号： C30B25/04 , C30B33/00 , H01L21/20 , H01L31/0687 , H01S5/02
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02422 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y10S117/915
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
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公开(公告)号：US4727047A
公开(公告)日：1988-02-23
申请号：US251214
申请日：1981-04-06
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02 , H01L21/302
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated, and the substrate can optionally be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 该片材被分离，并且衬底可以可选地被重新使用。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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15.发明授权公开(公告)号：US06701038B2
公开(公告)日：2004-03-02
申请号：US10091980
申请日：2002-03-05
IPC分类号： G02B612
CPC分类号： G02B6/3586 , G02B6/32 , G02B6/3556 , G02B6/356 , G02B6/357 , G02B6/3582 , G02B6/3584
摘要： A micro-electromechanical optical switch assembly is provided for an optical network. The switch assembly includes arrays of input and output optical fibers and optical components for selecting light paths that connect any selected pair of input and output fibers. The optical components include optical switching elements, such as torsionally supported micromechanical mirrors that are electrostatically actuated to rotate to direct the light beam along the desired light path. The mirrors are bulk micromachined into a semiconductor wafer, preserving their optical qualities, and formed into a chip mated to a cover. The package incorporates alignment elements to ensure correct position and orientation of the optical components in the package.
摘要翻译： 为光网络提供微机电光开关组件。 开关组件包括输入和输出光纤阵列和用于选择连接任何所选择的一对输入和输出光纤的光路的光学部件。 光学部件包括光学开关元件，例如扭转支撑的微机械反射镜，其被静电致动以旋转以沿着期望的光路引导光束。 镜子是大量微机械加工成半导体晶片，保持其光学质量，并且形成为与盖子配合的芯片。 该封装包含对准元件，以确保封装中光学元件的正确位置和方向。
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公开(公告)号：US06403985B1
公开(公告)日：2002-06-11
申请号：US08363150
申请日：1994-12-23
IPC分类号： H01L3300
CPC分类号： H01L27/1266 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/13454 , G02F2202/105 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3648 , G09G2300/023 , G09G2370/042 , H01L21/8221 , H01L21/84 , H01L24/96 , H01L25/0756 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L33/0062 , H01L33/10 , H01L33/405 , H01L33/465 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01S5/0217 , H01S5/423 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , Y10S438/928 , Y10S438/977 , H01L2924/00
摘要： Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/CaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
摘要翻译： 使用有机金属气相沉积（OMCVD）在非常薄的结构中形成由诸如III-V，特别是AlGaAs / CaAs材料的半导体材料形成的发光二极管（LED）和LED条和LED阵列。 使用碳作为p型杂质掺杂剂形成半导体p-n结。 描述了当生长衬底被去除时允许背面处理并且还使得能够维持LED条和阵列的器件配准的各种剥离方法。
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公开(公告)号：US5453405A
公开(公告)日：1995-09-26
申请号：US165025
申请日：1993-12-09
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1362 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/065 , H01L25/075 , H01L27/06 , H01L27/12 , H01L27/15 , H01L33/00 , H01L33/10 , H01L33/40 , H01L33/46 , H01S5/02 , H01S5/42 , H04N5/74 , H05B33/12 , H01L21/465
CPC分类号： H01L33/10 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/13454 , G09G3/36 , H01L21/8221 , H01L21/84 , H01L24/96 , H01L25/0756 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L33/0062 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F2202/105 , G09G2300/023 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01L33/405 , H01L33/465 , H01S5/0217 , H01S5/423 , H04N5/7491 , Y10S438/928 , Y10S438/977
摘要： Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
摘要翻译： 使用有机金属气相沉积（OMCVD）在非常薄的结构中形成由诸如III-V，特别是AlGaAs / GaAs材料的半导体材料形成的发光二极管（LED）和LED条和LED阵列。 使用碳作为p型杂质掺杂剂形成半导体p-n结。 描述了当生长衬底被去除时允许背面处理并且还使得能够维持LED条和阵列的器件配准的各种剥离方法。
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公开(公告)号：US5300788A
公开(公告)日：1994-04-05
申请号：US643552
申请日：1991-01-18
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1362 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/065 , H01L25/075 , H01L27/06 , H01L27/12 , H01L27/15 , H01L33/00 , H01L33/10 , H01L33/40 , H01L33/46 , H01S5/02 , H01S5/42 , H04N5/74 , H05B33/12 , H01K27/10
CPC分类号： H01L33/10 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/13454 , G09G3/36 , H01L21/8221 , H01L21/84 , H01L24/96 , H01L25/0756 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L33/0062 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F2202/105 , G09G2300/023 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01L33/405 , H01L33/465 , H01S5/0217 , H01S5/423 , H04N5/7491 , Y10S438/928 , Y10S438/977
摘要： Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
摘要翻译： 使用有机金属气相沉积（OMCVD）在非常薄的结构中形成由诸如III-V，特别是AlGaAs / GaAs材料的半导体材料形成的发光二极管（LED）和LED条和LED阵列。 使用碳作为p型杂质掺杂剂形成半导体p-n结。 描述了当生长衬底被去除时允许背面处理并且还使得能够维持LED条和阵列的器件配准的各种剥离方法。
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