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67 条记录 (耗时 0.02 秒)

    Polarization mode selection by distributed Bragg reflector in a quantum well laser
    13.
    发明授权
    Polarization mode selection by distributed Bragg reflector in a quantum well laser 失效
    量子阱激光器中分布式布拉格反射器的极化模式选择

    公开(公告)号：US5784399A

    公开(公告)日：1998-07-21

    申请号：US774937

    申请日：1996-12-19

    申请人： Decai Sun

    发明人： Decai Sun

    IPC分类号： H01S5/12 ,  H01S5/125 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19 ,  H01L29/06

    CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/4031 ,  H01S2301/14 ,  H01S5/125 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

    摘要： In a quantum well semiconductor laser structure, a distributed Bragg reflector is used to select the polarization mode of the emitted light beam. The period of the distributed Bragg reflector matches the peak gain of one polarization mode providing optical feedback for that mode to be the light emitted. The distributed Bragg reflector can extend along the length of the active layer within the semiconductor structure or extend at one end of the active layer external to the semiconductor structure.

    摘要翻译： 在量子阱半导体激光器结构中，使用分布式布拉格反射器来选择发射光束的偏振模式。 分布式布拉格反射器的周期与一种偏振模式的峰值增益匹配，为该模式提供光反馈，作为发出的光。 分布式布拉格反射器可以沿着半导体结构内的有源层的长度延伸，或者在半导体结构外部的有源层的一端延伸。

    Contact and omnidirectional reflective mirror for flip chipped light emitting devices
    15.
    发明授权
    Contact and omnidirectional reflective mirror for flip chipped light emitting devices 有权
    接触式和全向反射镜，用于倒装芯片发光器件

    公开(公告)号：US07274040B2

    公开(公告)日：2007-09-25

    申请号：US10960391

    申请日：2004-10-06

    申请人： Decai Sun

    发明人： Decai Sun

    IPC分类号： H01L27/15 ,  H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/005 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A conductive transparent layer, e.g., of indium tin oxide, and a reflective metal layer overlie the layer of second conductivity type and provide electrical contact with the layer of second conductivity type. A plurality of vias may be formed in the reflective metal and conductive transparent layer as well as the layer of second conductivity type, down to the doped substrate layer. A plurality of contacts are formed in the vias and are in electrical contact with the doped substrate layer. An insulating layer formed over the reflective metal layer insulates the plurality of contacts from the conductive transparent layer and reflective metal layer.

    摘要翻译： 发光器件包括衬底，掺杂衬底层，覆盖掺杂衬底层的第一导电类型的层，覆盖第一导电类型的层的发光层和覆盖发光层的第二导电类型的层。 诸如氧化铟锡的导电透明层和反射金属层覆盖在第二导电类型的层上，并提供与第二导电类型的层的电接触。 多个通孔可以形成在反射金属和导电透明层以及第二导电类型的层中，直到掺杂的衬底层。 在通孔中形成多个触点并且与掺杂的衬底层电接触。 形成在反射金属层上的绝缘层使多个触点与导电透明层和反射金属层绝缘。

    Contact and omnidirectional reflective mirror for flip chipped light emitting devices
    16.
    发明申请
    Contact and omnidirectional reflective mirror for flip chipped light emitting devices 有权
    接触式和全向反射镜，用于倒装芯片发光器件

    公开(公告)号：US20060071228A1

    公开(公告)日：2006-04-06

    申请号：US10960391

    申请日：2004-10-06

    申请人： Decai Sun

    发明人： Decai Sun

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/005 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A conductive transparent layer, e.g., of indium tin oxide, and a reflective metal layer overlie the layer of second conductivity type and provide electrical contact with the layer of second conductivity type. A plurality of vias may be formed in the reflective metal and conductive transparent layer as well as the layer of second conductivity type, down to the doped substrate layer. A plurality of contacts are formed in the vias and are in electrical contact with the doped substrate layer. An insulating layer formed over the reflective metal layer insulates the plurality of contacts from the conductive transparent layer and reflective metal layer.

    摘要翻译： 发光器件包括衬底，掺杂衬底层，覆盖掺杂衬底层的第一导电类型的层，覆盖第一导电类型的层的发光层和覆盖发光层的第二导电类型的层。 诸如氧化铟锡的导电透明层和反射金属层覆盖在第二导电类型的层上，并提供与第二导电类型的层的电接触。 多个通孔可以形成在反射金属和导电透明层以及第二导电类型的层中，直到掺杂的衬底层。 在通孔中形成多个触点并且与掺杂的衬底层电接触。 形成在反射金属层上的绝缘层使多个触点与导电透明层和反射金属层绝缘。

    Single-crystal-silicon ribbon hinges for micro-mirror and MEMS assembly on SOI material
    18.
    发明授权
    Single-crystal-silicon ribbon hinges for micro-mirror and MEMS assembly on SOI material 失效
    单晶硅丝带铰链用于微镜和MEMS组件在SOI材料上

    公开(公告)号：US06654155B2

    公开(公告)日：2003-11-25

    申请号：US09724329

    申请日：2000-11-29

    申请人： Michel A. Rosa ,  Decai Sun

    发明人： Michel A. Rosa ,  Decai Sun

    IPC分类号： G02B2600

    CPC分类号： G02B26/0841 ,  B81B7/0006 ,  B81B2203/058 ,  G02B2006/12104 ,  Y10T428/26 ,  Y10T428/265

    摘要： Provided is a micro-electromechanical assembly including an out-of-plane device formed on a device layer of a single crystal silicon substrate. A ribbon structure is formed on the device layer, where the ribbon structure has at least one of a width or depth, which is less than the width or depth of the out-of-plane device. A connection interface provides a connection point between a first end of the out-of-plane device and a first end of a ribbon structure, wherein the ribbon structure and out-of-plane device are integrated as a single piece.

    摘要翻译： 提供了一种微机电组件，其包括形成在单晶硅衬底的器件层上的面外器件。 带状结构形成在器件层上，其中带状结构具有小于面外器件的宽度或深度的宽度或深度中的至少一个。 连接接口提供了平面外设备的第一端和带状结构的第一端之间的连接点，其中带状结构和平面外设备被集成为单件。

    Independently addressable laser array with native oxide for optical confinement and electrical isolation
    20.
    发明授权
    Independently addressable laser array with native oxide for optical confinement and electrical isolation 失效
    独立寻址激光阵列，具有自然氧化物，用于光学限制和电隔离

    公开(公告)号：US6052399A

    公开(公告)日：2000-04-18

    申请号：US924030

    申请日：1997-08-29

    申请人： Decai Sun

    发明人： Decai Sun

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/40 ,  H01S3/085

    CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/2215

    摘要： The present invention provides a high density, edge emitting laser array structure formed by a wet oxidation process. Native oxide layers formed in adjacent grooves in the p-cladding layer Al-based alloy of the laser array structure provide both optical confinement to achieve single transverse mode operation and for electrical isolation to allow each laser diode to be independently addressable.

    摘要翻译： 本发明提供了通过湿式氧化法形成的高密度边缘发射激光器阵列结构。 在激光阵列结构的p型包覆层Al基合金中的相邻槽中形成的天然氧化物层提供了光学限制，以实现单一横向模式操作和电隔离以允许每个激光二极管独立地寻址。